Patents by Inventor Ming-Siang HUANG
Ming-Siang HUANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10749077Abstract: An optoelectronic device includes a semiconductor stack including a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface. The second contact layer is not overlapped with the first contact layer in a vertical direction. The second contact layer includes a plurality of dots separating to each other and formed of semiconductor material.Type: GrantFiled: December 20, 2018Date of Patent: August 18, 2020Assignee: EPISTAR CORPORATIONInventors: Chun-Yu Lin, Yung-Fu Chang, Rong-Ren Lee, Kuo-Feng Huang, Cheng-Long Yeh, Yi-Ching Lee, Ming-Siang Huang, Ming-Tzung Liou
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Patent number: 10600938Abstract: A light-emitting device includes: a light-emitting stack including a first active layer emitting a first light having a first peak wavelength; a diode emitting a second light having a second peak wavelength between 800 nm and 1900 nm; and a tunneling junction between the diode and the light-emitting stack, wherein the tunneling junction includes a first tunneling layer and a second tunneling layer on the first tunneling layer, the first tunneling layer has a band gap and a thickness of the first tunneling layer is greater than a thickness of the second tunneling layer.Type: GrantFiled: May 18, 2018Date of Patent: March 24, 2020Assignee: EPISTAR CORPORATIONInventors: Chih-Chiang Lu, Yi-Chieh Lin, Rong-Ren Lee, Yu-Ren Peng, Ming-Siang Huang, Ming-Ta Chin, Yi-Ching Lee
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Patent number: 10580937Abstract: An optoelectronic device includes a semiconductor structure having a first side and a second side opposite to the first side, a first pad at the first side, a first finger connected to the electrode pad and having a first width, an insulating layer at the second side and comprising a first part under the first finger, the first part having a bottom surface with a second width larger than the first width and a side surface inclined to the bottom surface, and a contact layer covering the bottom surface and the side surface.Type: GrantFiled: December 20, 2018Date of Patent: March 3, 2020Assignee: EPISTAR CORPORATIONInventors: Chun-Yu Lin, Yung-Fu Chang, Rong-Ren Lee, Kuo-Feng Huang, Cheng-Long Yeh, Yi-Ching Lee, Ming-Siang Huang, Ming-Tzung Liou
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Publication number: 20190148599Abstract: An optoelectronic device includes a semiconductor stack including a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface. The second contact layer is not overlapped with the first contact layer in a vertical direction. The second contact layer includes a plurality of dots separating to each other and formed of semiconductor material.Type: ApplicationFiled: December 20, 2018Publication date: May 16, 2019Inventors: Chun-Yu LIN, Yung-Fu CHANG, Rong-Ren LEE, Kuo-Feng HUANG, Cheng-Long YEH, Yi-Ching LEE, Ming-Siang HUANG, Ming-Tzung LIOU
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Publication number: 20190131496Abstract: An optoelectronic device includes a semiconductor structure having a first side and a second side opposite to the first side, a first pad at the first side, a first finger connected to the electrode pad and having a first width, an insulating layer at the second side and comprising a first part under the first finger, the first part having a bottom surface with a second width larger than the first width and a side surface inclined to the bottom surface, and a contact layer covering the bottom surface and the side surface.Type: ApplicationFiled: December 20, 2018Publication date: May 2, 2019Inventors: Chun-Yu LIN, Yung-Fu CHANG, Rong-Ren LEE, Kuo-Feng HUANG, Cheng-Long YEH, Yi-Ching LEE, Ming-Siang HUANG, Ming-Tzung LIOU
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Patent number: 10205059Abstract: The present disclosure is related to an optoelectronic device comprising a semiconductor stack comprising a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface, wherein the second contact layer is not overlapped with the first contact layer in a vertical direction; wherein the second contact layer comprises a plurality of dots separating from each other and formed of semiconductor material.Type: GrantFiled: September 20, 2017Date of Patent: February 12, 2019Assignee: Epistar CorporationInventors: Chun-Yu Lin, Yung-Fu Chang, Rong-Ren Lee, Kuo-Feng Huang, Cheng-Long Yeh, Yi-Ching Lee, Ming-Siang Huang, Ming-Tzung Liou
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Publication number: 20180269358Abstract: A light-emitting device includes: a light-emitting stack including a first active layer emitting a first light having a first peak wavelength; a diode emitting a second light having a second peak wavelength between 800 nm and 1900 nm; and a tunneling junction between the diode and the light-emitting stack, wherein the tunneling junction includes a first tunneling layer and a second tunneling layer on the first tunneling layer, the first tunneling layer has a band gap and a thickness of the first tunneling layer is greater than a thickness of the second tunneling layer.Type: ApplicationFiled: May 18, 2018Publication date: September 20, 2018Inventors: Chih-Chiang LU, Yi-Chieh LIN, Rong-Ren LEE, Yu-Ren PENG, Ming-Siang HUANG, Ming-Ta CHIN, Yi-Ching LEE
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Patent number: 10008636Abstract: A light-emitting device is provided. comprises: a light-emitting stack comprising an active layer emitting a first light having a first peak wavelength ? nm; and an adjusting element stacked on and electrically connected to the active layer, wherein the adjusting element comprises a diode emitting a second light having a second peak wavelength between 800 nm and 1900 nm; wherein a forward voltage of the light-emitting device is between (1240/0.8?) volt and (1240/0.5?) volt, and a ratio of the intensity of the first light emitted from the active layer at the first peak wavelength to the intensity of the second light emitted from the diode at the second peak wavelength is greater than 10 and not greater than 1000.Type: GrantFiled: October 27, 2017Date of Patent: June 26, 2018Assignee: EPISTAR CORPORATIONInventors: Chih-Chiang Lu, Yi-Chieh Lin, Rong-Ren Lee, Yu-Ren Peng, Ming-Siang Huang, Ming-Ta Chin, Yi-Ching Lee
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Publication number: 20180069157Abstract: A light-emitting device is provided. comprises: a light-emitting stack comprising an active layer emitting a first light having a first peak wavelength ? nm; and an adjusting element stacked on and electrically connected to the active layer, wherein the adjusting element comprises a diode emitting a second light having a second peak wavelength between 800 nm and 1900 nm; wherein a forward voltage of the light-emitting device is between (1240/0.8?) volt and (1240/0.5?) volt, and a ratio of the intensity of the first light emitted from the active layer at the first peak wavelength to the intensity of the second light emitted from the diode at the second peak wavelength is greater than 10 and not greater than 1000.Type: ApplicationFiled: October 27, 2017Publication date: March 8, 2018Inventors: Chih-Chiang LU, Yi-Chieh LIN, Rong-Ren LEE, Yu-Ren PENG, Ming-Siang HUANG, Ming-Ta CHIN, Yi-Ching LEE
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Publication number: 20180033918Abstract: The present disclosure is related to an optoelectronic device comprising a semiconductor stack comprising a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface, wherein the second contact layer is not overlapped with the first contact layer in a vertical direction; wherein the second contact layer comprises a plurality of dots separating to each other and formed of semiconductor material.Type: ApplicationFiled: September 20, 2017Publication date: February 1, 2018Inventors: Chun-Yu LIN, Yung-Fu CHANG, Rong-Ren LEE, Kuo-Feng HUANG, Cheng-Long YEH, Yi-Ching LEE, Ming-Siang HUANG, Ming-Tzung LIOU
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Patent number: 9859470Abstract: A light-emitting device is provided. The light-emitting device comprises: a light-emitting stack having an active layer emitting first light having a peak wavelength ? nm; and an adjusting element stacked electrically connected to the active layer in series for tuning a forward voltage of the light-emitting device; wherein the forward voltage of the light-emitting device is between (1240/0.8?) volt and (1240/0.5?) volt.Type: GrantFiled: March 10, 2016Date of Patent: January 2, 2018Assignee: EPISTAR CORPORATIONInventors: Chih-Chiang Lu, Yi-Chieh Lin, Rong-Ren Lee, Yu-Ren Peng, Ming-Siang Huang, Ming-Ta Chin, Yi-Ching Lee
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Publication number: 20170263820Abstract: A light-emitting device is provided. The light-emitting device comprises: a light-emitting stack having an active layer emitting first light having a peak wavelength ? nm; and an adjusting element stacked electrically connected to the active layer in series for tuning a forward voltage of the light-emitting device; wherein the forward voltage of the light-emitting device is between (1240/0.8?) volt and (1240/0.5?) volt.Type: ApplicationFiled: March 10, 2016Publication date: September 14, 2017Inventors: Chih-Chiang LU, Yi-Chieh LIN, Rong-Ren LEE, Yu-Ren PENG, Ming-Siang HUANG, Ming-Ta CHIN, Yi-Ching LEE