Abstract: A high-brightness blue-light emitting crystalline structure is provided for enhancing illuminating intensity of a blue-light emitting diode by taking advantage of a sapphire substrate, which is provided with a multi-layer distributed Bragg reflector (DBR) or a plated mirror layer on its surface for reflecting a part of the light created from a P-GaN surface so as to supplement the other part of light, which penetrates a transparent conductive layer directly. And, indium tin oxide is adopted for serving as a transparent conductive layer of blue-light emitting diode, or an extraordinarily thin nickel/aurum layer is plated on the P-GaN surface precedently before forming the ITO conductive layer to thereby care both the light-permeability and the ohmic contact resistance. A plurality of anti-reflection coatings (ARC) is formed on the ITO conductive layer for the enhancement of blue-light emissivity.