Patents by Inventor Ming-Sung PARK

Ming-Sung PARK has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Cobalt precursor, method of preparing same and method of manufacturing thin film using same
    Patent number: 11401290
    Abstract: The present invention relates to a vapor deposition compound enabling thin-film deposition through vapor deposition, and more particularly to a novel cobalt precursor, which can be applied to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and exhibits superior reactivity, volatility and thermal stability, a method of preparing the same and a method of manufacturing a thin film using the same.
    Type: Grant
    Filed: December 27, 2018
    Date of Patent: August 2, 2022
    Assignee: HANSOL CHEMICAL CO., LTD.
    Inventors: Jung-Woo Park, Jang-Hyeon Seok, Hyo-Suk Kim, Ming-Sung Park
  • COBALT PRECURSOR, METHOD OF PREPARING SAME AND METHOD OF MANUFACTURING THIN FILM USING SAME
    Publication number: 20210332074
    Abstract: The present invention relates to a vapor deposition compound enabling thin-film deposition through vapor deposition, and more particularly to a novel cobalt precursor, which can be applied to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and exhibits superior reactivity, volatility and thermal stability, a method of preparing the same and a method of manufacturing a thin film using the same.
    Type: Application
    Filed: December 27, 2018
    Publication date: October 28, 2021
    Inventors: Jung-Woo PARK, Jang-Hyeon SEOK, Hyo-Suk KIM, Ming-Sung PARK