Patents by Inventor Ming Ta Lei
Ming Ta Lei has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11978810Abstract: Various embodiments of the present disclosure are directed towards a method for forming a varactor comprising a reduced surface field (RESURF) region. The method includes forming a drift region having a first doping type within a substrate. A RESURF region having a second doping type is formed within the substrate such that the RESURF region is below the drift region. A gate structure is formed on the substrate. A pair of contact regions is formed within the substrate on opposing sides of the gate structure. The contact regions respectively abut the drift region and have the first doping type, and wherein the first doping type is opposite the second doping type.Type: GrantFiled: May 19, 2021Date of Patent: May 7, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Liang-Yu Su, Chih-Wen Yao, Hsiao-Chin Tuan, Ming-Ta Lei
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Patent number: 11923429Abstract: A semiconductor device and method for forming the semiconductor device are provided. In some embodiments, a semiconductor substrate comprises a device region. An isolation structure extends laterally in a closed path to demarcate the device region. A first source/drain region and a second source/drain region are in the device region and laterally spaced. A sidewall of the first source/drain region directly contacts the isolation structure at a first isolation structure sidewall, and remaining sidewalls of the first source/drain region are spaced from the isolation structure. A selectively-conductive channel is in the device region, and extends laterally from the first source/drain region to the second source/drain region. A plate comprises a central portion and a first peripheral portion. The central portion overlies the selectively-conductive channel, and the first peripheral portion protrudes from the central portion towards the first isolation structure sidewall.Type: GrantFiled: August 18, 2021Date of Patent: March 5, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Chang Cheng, Fu-Yu Chu, Ming-Ta Lei, Ruey-Hsin Liu, Shih-Fen Huang
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Patent number: 11916115Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a field plate. A gate structure overlies a substrate between a source region and a drain region. A drift region is disposed laterally between the gate structure and the drain region. A first dielectric layer overlies the substrate. A field plate is disposed within the first dielectric layer between the gate structure and the drain region. A conductive wire overlies the first dielectric layer and contacts the field plate. At least a portion of the conductive wire directly overlies a first sidewall of the drift region.Type: GrantFiled: August 19, 2021Date of Patent: February 27, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Cheng Ho, Ming-Ta Lei, Yu-Chang Jong
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Publication number: 20230378286Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a field plate. A gate structure overlies a substrate between a source region and a drain region. A drift region is disposed laterally between the gate structure and the drain region. A first dielectric layer overlies the substrate. A field plate is disposed within the first dielectric layer between the gate structure and the drain region. A conductive wire overlies the first dielectric layer and contacts the field plate. At least a portion of the conductive wire directly overlies a first sidewall of the drift region.Type: ApplicationFiled: August 4, 2023Publication date: November 23, 2023Inventors: Chia-Cheng Ho, Ming-Ta Lei, Yu-Chang Jong
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Publication number: 20230026676Abstract: The present disclosure relates an integrated chip structure. The integrated chip structure includes a first chiplet predominantly having a first plurality of integrated chip devices coupled to a first plurality of interconnects over a first substrate. The first plurality of integrated chip devices are a first type of integrated chip device. The integrated chip structure further includes a second chiplet predominantly having a second plurality of integrated chip devices coupled to a second plurality of interconnects over a second substrate. The second plurality of integrated chip devices are a second type of integrated chip device different than the first type of integrated chip device. One or more inter-chiplet connectors are between the first and second chiplets and are configured to electrically couple the first and second chiplets. The first plurality of interconnects have a first minimum width different than a second minimum width of the second plurality of interconnects.Type: ApplicationFiled: January 7, 2022Publication date: January 26, 2023Inventors: Chih-Chang Cheng, Po-Chih Su, Ruey-Hsin Liu, Ming-Ta Lei
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Publication number: 20230014120Abstract: Various embodiments of the present disclosure are directed towards an integrated chip. The integrated chip includes a semiconductor substrate having a device substrate overlying a handle substrate and an insulator layer disposed between the device substrate and the handle substrate. A gate electrode overlies the device substrate between a drain region and a source region. A conductive via extends through the device substrate and the insulator layer to contact the handle substrate. A first isolation structure is disposed within the device substrate and comprises a first isolation segment disposed laterally between the gate electrode and the conductive via. A contact region is disposed within the device substrate between the first isolation segment and the conductive via. A conductive gate electrode directly overlies the first isolation segment and is electrically coupled to the contact region.Type: ApplicationFiled: September 21, 2022Publication date: January 19, 2023Inventors: Hsin-Chih Chiang, Tung-Yang Lin, Ruey-Hsin Liu, Ming-Ta Lei
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Patent number: 11538914Abstract: A semiconductor device includes a semiconductor substrate, a gate dielectric, a gate electrode, and a pair of source/drain regions. The gate dielectric is disposed in the semiconductor substrate having an upper boundary lower than an upper surface of the semiconductor substrate, and an upper surface flush with the upper surface of the semiconductor substrate. The gate electrode is disposed over the gate dielectric having a first section over the upper boundary of the gate dielectric and a second section over the upper surface of the gate dielectric. The second section partially covers and partially exposes the upper surface of the gate dielectric. The pair of source/drain regions are disposed on opposing sides of the gate dielectric.Type: GrantFiled: April 7, 2021Date of Patent: December 27, 2022Assignee: Taiwan Semiconductor Manufacturing Company Ltd.Inventors: Ta-Yuan Kung, Ruey-Hsin Liu, Chen-Liang Chu, Chih-Wen Yao, Ming-Ta Lei
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Patent number: 11508757Abstract: Various embodiments of the present disclosure are directed towards an integrated chip. The integrated chip includes a semiconductor substrate having a device substrate overlying a handle substrate and an insulator layer disposed between the device substrate and the handle substrate. A gate electrode overlies the device substrate between a drain region and a source region. A conductive via extends through the device substrate and the insulator layer to contact the handle substrate. A first isolation structure is disposed within the device substrate and comprises a first isolation segment disposed laterally between the gate electrode and the conductive via. A contact region is disposed within the device substrate between the first isolation segment and the conductive via. A conductive gate electrode directly overlies the first isolation segment and is electrically coupled to the contact region.Type: GrantFiled: May 18, 2021Date of Patent: November 22, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hsin-Chih Chiang, Tung-Yang Lin, Ruey-Hsin Liu, Ming-Ta Lei
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Publication number: 20220367655Abstract: A method to form a transistor device with a recessed gate structure is provided. In one embodiment, a gate structure is formed overlying a device region and an isolation structure. The gate structure separates a device doping well along a first direction with a pair of recess regions disposed on opposite sides of the device region in a second direction perpendicular to the first direction. A pair of source/drain regions in is formed the device region on opposite sides of the gate structure. A sidewall spacer is formed extending along sidewalls of the gate structure, where a top surface of the sidewall spacer is substantially flush with the top surface of the gate structure. A resistive protection layer is then formed on the sidewall spacer and covering the pair of recess regions.Type: ApplicationFiled: July 27, 2022Publication date: November 17, 2022Inventors: Chen-Liang Chu, Chien-Chih Chou, Chih-Chang Cheng, Yi-Huan Chen, Kong-Beng Thei, Ming-Ta Lei, Ruey-Hsin Liu, Ta-Yuan Kung
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Publication number: 20220367614Abstract: An avalanche-protected field effect transistor includes, within a semiconductor substrate, a body semiconductor layer and a doped body contact region having a doping of a first conductivity type, and a source region a drain region having a doping of a second conductivity type. A buried first-conductivity-type well may be located within the semiconductor substrate. The buried first-conductivity-type well underlies, and has an areal overlap in a plan view with, the drain region, and is vertically spaced apart from the drain region, and has a higher atomic concentration of dopants of the first conductivity type than the body semiconductor layer. The configuration of the field effect transistor induces more than 90% of impact ionization electrical charges during avalanche breakdown to flow from the source region, to pass through the buried first-conductivity-type well, and to impinge on a bottom surface of the drain region.Type: ApplicationFiled: July 19, 2022Publication date: November 17, 2022Inventors: Liang-Yu SU, Hung-Chih TSAI, Ruey-Hsin LIU, Ming-Ta LEI, Chang-Tai YANG, Te-Yin HSIA, Yu-Chang JONG, Nan-Ying YANG
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Publication number: 20220333251Abstract: The present disclosure provides a gas sensor. The gas sensor includes a substrate, a conductor layer over the substrate, wherein the conductor layer includes a conductive pattern including a plurality of openings, the openings being arranged in a repeating pattern, an insulating layer in the plurality of openings and over a top surface of the conductive pattern, wherein the conductive pattern is embedded in the insulating layer, and a gas sensing film over a portion of the insulating layer.Type: ApplicationFiled: June 20, 2022Publication date: October 20, 2022Inventors: MING-TA LEI, CHIA-HUA CHU, HSIN-CHIH CHIANG, TUNG-TSUN CHEN, CHUN-WEN CHENG
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Patent number: 11444169Abstract: A transistor device with a recessed gate structure is provided. In some embodiments, the transistor device comprises a semiconductor substrate comprising a device region surrounded by an isolation structure and a pair of source/drain regions disposed in the device region and laterally spaced apart one from another in a first direction. A gate structure overlies the device region and the isolation structure and arranged between the pair of source/drain regions. The gate structure comprises a pair of recess regions disposed on opposite sides of the device region in a second direction perpendicular to the first direction. A channel region is disposed in the device region underneath the gate structure. The channel region has a channel width extending in the second direction from one of the recess regions to the other one of the recess regions.Type: GrantFiled: July 15, 2020Date of Patent: September 13, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chen-Liang Chu, Chien-Chih Chou, Chih-Chang Cheng, Yi-Huan Chen, Kong-Beng Thei, Ming-Ta Lei, Ruey-Hsin Liu, Ta-Yuan Kung
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Patent number: 11437466Abstract: An avalanche-protected field effect transistor includes, within a semiconductor substrate, a body semiconductor layer and a doped body contact region having a doping of a first conductivity type, and a source region a drain region having a doping of a second conductivity type. A buried first-conductivity-type well may be located within the semiconductor substrate. The buried first-conductivity-type well underlies, and has an areal overlap in a plan view with, the drain region, and is vertically spaced apart from the drain region, and has a higher atomic concentration of dopants of the first conductivity type than the body semiconductor layer. The configuration of the field effect transistor induces more than 90% of impact ionization electrical charges during avalanche breakdown to flow from the source region, to pass through the buried first-conductivity-type well, and to impinge on a bottom surface of the drain region.Type: GrantFiled: August 11, 2020Date of Patent: September 6, 2022Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Liang-Yu Su, Hung-Chih Tsai, Ruey-Hsin Liu, Ming-Ta Lei, Chang-Tai Yang, Te-Yin Hsia, Yu-Chang Jong, Nan-Ying Yang
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Patent number: 11414763Abstract: The present disclosure provides a method of manufacturing a gas sensor. The method includes the following operations: a substrate is received; a conductor layer is formed over the substrate; the conductor layer is patterned to form a conductor with a plurality of openings by an etching operation, the openings being arranged in a repeating pattern, a minimal dimension of the opening being about 4 micrometers; and a gas-sensing film is formed over the conductor.Type: GrantFiled: December 6, 2019Date of Patent: August 16, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Ming-Ta Lei, Chia-Hua Chu, Hsin-Chih Chiang, Tung-Tsun Chen, Chun-Wen Cheng
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Publication number: 20220223625Abstract: Various embodiments of the present disclosure are directed towards an integrated chip. The integrated chip includes a semiconductor substrate having a device substrate overlying a handle substrate and an insulator layer disposed between the device substrate and the handle substrate. A gate electrode overlies the device substrate between a drain region and a source region. A conductive via extends through the device substrate and the insulator layer to contact the handle substrate. A first isolation structure is disposed within the device substrate and comprises a first isolation segment disposed laterally between the gate electrode and the conductive via. A contact region is disposed within the device substrate between the first isolation segment and the conductive via. A conductive gate electrode directly overlies the first isolation segment and is electrically coupled to the contact region.Type: ApplicationFiled: May 18, 2021Publication date: July 14, 2022Inventors: Hsin-Chih Chiang, Tung-Yang Lin, Ruey-Hsin Liu, Ming-Ta Lei
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Publication number: 20220052153Abstract: An avalanche-protected field effect transistor includes, within a semiconductor substrate, a body semiconductor layer and a doped body contact region having a doping of a first conductivity type, and a source region a drain region having a doping of a second conductivity type. A buried first-conductivity-type well may be located within the semiconductor substrate. The buried first-conductivity-type well underlies, and has an areal overlap in a plan view with, the drain region, and is vertically spaced apart from the drain region, and has a higher atomic concentration of dopants of the first conductivity type than the body semiconductor layer. The configuration of the field effect transistor induces more than 90% of impact ionization electrical charges during avalanche breakdown to flow from the source region, to pass through the buried first-conductivity-type well, and to impinge on a bottom surface of the drain region.Type: ApplicationFiled: August 11, 2020Publication date: February 17, 2022Inventors: Liang-Yu SU, Hung-Chih TSAI, Ruey-Hsin LIU, Ming-Ta LEI, Chang-Tai YANG, Te-Yin HSIA, Yu-Chang JONG, Nan-Ying YANG
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Publication number: 20210384302Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a field plate. A gate structure overlies a substrate between a source region and a drain region. A drift region is disposed laterally between the gate structure and the drain region. A first dielectric layer overlies the substrate. A field plate is disposed within the first dielectric layer between the gate structure and the drain region. A conductive wire overlies the first dielectric layer and contacts the field plate. At least a portion of the conductive wire directly overlies a first sidewall of the drift region.Type: ApplicationFiled: August 19, 2021Publication date: December 9, 2021Inventors: Chia-Cheng Ho, Ming-Ta Lei, Yu-Chang Jong
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Publication number: 20210376100Abstract: A semiconductor device and method for forming the semiconductor device are provided. In some embodiments, a semiconductor substrate comprises a device region. An isolation structure extends laterally in a closed path to demarcate the device region. A first source/drain region and a second source/drain region are in the device region and laterally spaced. A sidewall of the first source/drain region directly contacts the isolation structure at a first isolation structure sidewall, and remaining sidewalls of the first source/drain region are spaced from the isolation structure. A selectively-conductive channel is in the device region, and extends laterally from the first source/drain region to the second source/drain region. A plate comprises a central portion and a first peripheral portion. The central portion overlies the selectively-conductive channel, and the first peripheral portion protrudes from the central portion towards the first isolation structure sidewall.Type: ApplicationFiled: August 18, 2021Publication date: December 2, 2021Inventors: Chih-Chang Cheng, Fu-Yu Chu, Ming-Ta Lei, Ruey-Hsin Liu, Shih-Fen Huang
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Patent number: 11121225Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a field plate. A gate electrode overlies a substrate between a source region and a drain region. A drift region is arranged laterally between the gate electrode and the drain region. A plurality of inter-level dielectric (ILD) layers overlie the substrate. The plurality of ILD layers includes a first ILD layer underlying a second ILD layer. A plurality of conductive interconnect layers is disposed within the plurality of ILD layers. The field plate extends from a top surface of the first ILD layer to a point that is vertically separated from the drift region by the first ILD layer. The field plate is laterally offset the gate electrode by a non-zero distance in a direction toward the drain region. The field plate includes a same material as at least one of the plurality of conductive interconnect layers.Type: GrantFiled: November 1, 2019Date of Patent: September 14, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Cheng Ho, Ming-Ta Lei, Yu-Chang Jong
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Publication number: 20210273069Abstract: A transistor device with a recessed gate structure is provided. In some embodiments, the transistor device comprises a semiconductor substrate comprising a device region surrounded by an isolation structure and a pair of source/drain regions disposed in the device region and laterally spaced apart one from another in a first direction. A gate structure overlies the device region and the isolation structure and arranged between the pair of source/drain regions. The gate structure comprises a pair of recess regions disposed on opposite sides of the device region in a second direction perpendicular to the first direction. A channel region is disposed in the device region underneath the gate structure. The channel region has a channel width extending in the second direction from one of the recess regions to the other one of the recess regions.Type: ApplicationFiled: July 15, 2020Publication date: September 2, 2021Inventors: Chen-Liang Chu, Chien-Chih Chou, Chih-Chang Cheng, Yi-Huan Chen, Kong-Beng Thei, Ming-Ta Lei, Ruey-Hsin Liu, Ta-Yuan Kung