Abstract: A semiconductor structure including a first dielectric layer and a conductive pattern is provided. The conductive pattern is disposed in the first dielectric layer, wherein the conductive pattern comprises an alloy layer and a first conductive layer, the alloy layer surrounds sidewalls and a bottom surface of the first conductive layer, a material of the alloy layer comprises an alloy of at least two metals, and at least one of the at least two metals relative to the rest of the at least two metals tends to be reacted with a dielectric material of the first dielectric layer.

Abstract: TROP2 binders and variants thereof are described. In a specific embodiment, the TROP2 binders that are antibodies that preferentially bind high-expressing TROP2 cells over low-expressing TROP2 cells and conjugates thereof comprising the TROP2 binders conjugated to a payload are described.

Abstract: A Saccharomyces cerevisiae antibody display system that simultaneously secrets and displays antibody fragments from a very large size synthetic nave human antibody library for therapeutic antibody lead discovery and engineering is described. A bait anchor complexed with a monovalent antibody fragment is tethered on the surface of the S. cerevisiae host cell, wherein the fragment can be assayed for antigen binding, while the full bivalent antibody is simultaneously secreted from the host cell. Methods of using the system for identifying antibodies from the library that bind specifically to an antigen of interest are also provided. Polypeptides, polynucleotides and host cells used for making the antibody display system are also provided along with methods of use thereof.

Abstract: Binding proteins that bind amyloid beta (Abeta) are described, including heavy chain antibody variable domain (VHH) constructs comprising human-like VHH comprising three synthetically generated complementarity determining region (CDR) areas. Human-like VHHs identified using these libraries may be useful for the manufacture of therapeutics for treating diseases and disorders.

Abstract: A computer-implemented method is disclosed for candidate antibody exploration. The method includes receiving sequence reads from a sequencing system, wherein each sequence read comprises a target gene for expressing a candidate antibody, wherein each sequence read is associated with a binding affinity to a target antigen. The method includes generating a sequence representation for each sequence read, representing the amino acid sequences of the sequence read. The method includes training a binding affinity prediction model with the sequence representations and the binding affinities. The method includes generating a synthetic candidate sequence read that is different from the sequence reads. The method includes generating a sequence representation for the synthetic candidate sequence read.

Abstract: Provided herein are anti-LAP antibodies (e.g., recombinant humanized, chimeric, and human anti-LAP antibodies) or antigen binding fragments thereof which have therapeutically beneficial properties, such as binding specifically to LAP-TGF?1 on cells but not to LAP-TGF?1 in extracellular matrix, as well as compositions including the same. Also provided are uses of these antibodies or antigen binding fragments in therapeutic applications, such as in the treatment of cancer, and diagnostic applications.

Abstract: Provided herein are high affinity antibodies or antigen binding fragments thereof that specifically bind to human tau-pS413. Also provided are compositions, kits, methods, and uses involving such antibodies or antigen binding fragments thereof.

Abstract: Provided herein are high affinity antibodies or antigen binding fragments thereof that specifically bind to human tau-pS413. Also provided are compositions, kits, methods, and uses involving such antibodies or antigen binding fragments thereof.

Abstract: Provided herein are high affinity antibodies or antigen binding fragments thereof that specifically bind to human tau-pS413. Also provided are compositions, kits, methods, and uses involving such antibodies or antigen binding fragments thereof.

Abstract: Heavy chain antibody variable domain (VHH) display libraries are described comprising human-like VHH comprising three synthetically generated complementarity determining region (CDR) areas in which the amino acids at each of positions 44 and 45 or positions 37, 44, 45, and 47 comprise the amino acid at the corresponding position of a Camelid VHH, wherein the amino acid positions are according to Kabat numbering Human-like VHHs identified using these libraries may be useful for the manufacture of therapeutics for treating diseases and disorders.

Abstract: A DRAM device and its manufacturing method are provided. The DRAM device includes an interlayer dielectric layer and capacitor units framed on a substrate. The interlayer dielectric layer has capacitor unit accommodating through holes and includes a first support layer, a composite dielectric layer, and a second support layer sequentially formed on the substrate. The composite dielectric layer includes at least one first insulating layer and second insulating layer alternately stacked. Each capacitor unit accommodating through hole forms a first opening in the second insulating layer and forms a second opening communicating with the first opening in the first insulating layer. The second opening is wider than the first opening. The capacitor units are formed in the capacitor unit accommodating through holes. The top of the capacitor unit is higher than the top surface of the interlayer dielectric layer and defines a recessed region.

Abstract: A capacitor and a manufacturing method thereof are provided. The capacitor includes a cup-shaped lower electrode, a capacitive dielectric layer, an upper electrode, and a support layer. The support layer includes an upper support layer surrounding an upper portion of the cup-shaped lower electrode, a middle support layer surrounding a middle portion of the cup-shaped lower electrode, and a lower support layer surrounding a lower portion of the cup-shaped lower electrode. Surfaces of the upper support layer, the middle support layer, and the lower support layer are covered by the capacitive dielectric layer.

Abstract: Provided herein are high affinity antibodies or antigen binding fragments thereof that specifically bind to human tau-pS413. Also provided are compositions, kits, methods, and uses involving such antibodies or antigen binding fragments thereof.

Abstract: A DRAM device and its manufacturing method are provided. The DRAM device includes an interlayer dielectric layer and capacitor units framed on a substrate. The interlayer dielectric layer has capacitor unit accommodating through holes and includes a first support layer, a composite dielectric layer, and a second support layer sequentially formed on the substrate. The composite dielectric layer includes at least one first insulating layer and second insulating layer alternately stacked. Each capacitor unit accommodating through hole forms a first opening in the second insulating layer and forms a second opening communicating with the first opening in the first insulating layer. The second opening is wider than the first opening. The capacitor units are formed in the capacitor unit accommodating through holes. The top of the capacitor unit is higher than the top surface of the interlayer dielectric layer and defines a recessed region.

Abstract: A capacitor and a manufacturing method thereof are provided. The capacitor includes a cup-shaped lower electrode, a capacitive dielectric layer, an upper electrode, and a support layer. The support layer includes an upper support layer surrounding an upper portion of the cup-shaped lower electrode, a middle support layer surrounding a middle portion of the cup-shaped lower electrode, and a lower support layer surrounding a lower portion of the cup-shaped lower electrode. Surfaces of the upper support layer, the middle support layer, and the lower support layer are covered by the capacitive dielectric layer.

Abstract: Provided is a capacitor structure including a substrate, a cup-shaped lower electrode, a top supporting layer, a capacitor dielectric layer, and an upper electrode. The cup-shaped lower electrode is located on the substrate. The top supporting layer surrounds the upper portion of the cup-shaped lower electrode. The top supporting layer includes a high-k material. Surfaces of the cup-shaped lower electrode and the top supporting layer are covered by the capacitor dielectric layer. A surface of the capacitor dielectric layer is covered by the upper electrode.

Abstract: A method of manufacturing a memory device includes following steps. A first dielectric layer is formed on the substrate between bit-line structures. First trenches are formed in the first dielectric layer. A second dielectric layer is formed to fill in the first trenches. A portion of the first dielectric layer is removed, so that a top surface of the first dielectric layer is lower than a top surface of the second dielectric layer. A first mask layer is formed to cover the top surfaces of the first and second dielectric layers. A first etching process is performed to form second trenches in the first dielectric layer. A third dielectric layer is formed to fill the second trenches. The first dielectric layer is removed to form contact openings between the second and third dielectric layers. A conductive material is formed to fill in the contact openings.

Abstract: Provided is a capacitor structure including a substrate, a cup-shaped lower electrode, a top supporting layer, a capacitor dielectric layer, and an upper electrode. The cup-shaped lower electrode is located on the substrate. The top supporting layer surrounds the upper portion of the cup-shaped lower electrode. The top supporting layer includes a high-k material. Surfaces of the cup-shaped lower electrode and the top supporting layer are covered by the capacitor dielectric layer. A surface of the capacitor dielectric layer is covered by the upper electrode.

Abstract: Provided is a capacitor structure including a substrate, a cup-shaped lower electrode, a top supporting layer, a capacitor dielectric layer, and an upper electrode. The cup-shaped lower electrode is located on the substrate. The top supporting layer surrounds the upper portion of the cup-shaped lower electrode. The top supporting layer includes a high-k material. Surfaces of the cup-shaped lower electrode and the top supporting layer are covered by the capacitor dielectric layer. A surface of the capacitor dielectric layer is covered by the upper electrode.

Abstract: Provided is a capacitor structure including a substrate, a cup-shaped lower electrode, a top supporting layer, a capacitor dielectric layer, and an upper electrode. The cup-shaped lower electrode is located on the substrate. The top supporting layer surrounds the upper portion of the cup-shaped lower electrode. The top supporting layer includes a high-k material. Surfaces of the cup-shaped lower electrode and the top supporting layer are covered by the capacitor dielectric layer. A surface of the capacitor dielectric layer is covered by the upper electrode.