Abstract: In embodiments of the present disclosure, there is provided an approach for fact checking based on semantic graphs. According to embodiments of the present disclosure, after obtaining a text to be fact checked, a plurality of evidence sentences related to the text are retrieved from an evidence database. Then, semantic graphs of the text and the evidence sentences are constructed based on the semantic analysis, and a veracity of a statement in the text can be determined based on the semantic graphs. Embodiments of the present disclosure propose a graph-based reasoning approach for fact checking, and use the constructed semantic graphs to facilitate verification of the truthfulness of the text, thereby improving the accuracy for fact checking.

Abstract: A serverless computing-based, continuous gateway watch of a data store for data change process is provided. The process includes the gateway interface of the computing environment receiving a watch request from a user system to monitor the data store for data change. Based on receiving the watch request, the gateway interface invokes a serverless setup service to establish a connection between the gateway interface and the data store of the computing environment to be monitored for data change. Based on receiving, at the gateway interface, a data change indication from the data store, the gateway interface invokes a serverless message process service to mutate the data change indication from the data store into a mutated data change message indicative of a data change at the data store for return to the user system pursuant to the watch request, with the serverless message process service terminating thereafter.

Abstract: A Saccharomyces cerevisiae antibody display system that simultaneously secrets and displays antibody fragments from a very large size synthetic nave human antibody library for therapeutic antibody lead discovery and engineering is described. A bait anchor complexed with a monovalent antibody fragment is tethered on the surface of the S. cerevisiae host cell, wherein the fragment can be assayed for antigen binding, while the full bivalent antibody is simultaneously secreted from the host cell. Methods of using the system for identifying antibodies from the library that bind specifically to an antigen of interest are also provided. Polypeptides, polynucleotides and host cells used for making the antibody display system are also provided along with methods of use thereof.

Abstract: Binding proteins that bind amyloid beta (Abeta) are described, including heavy chain antibody variable domain (VHH) constructs comprising human-like VHH comprising three synthetically generated complementarity determining region (CDR) areas. Human-like VHHs identified using these libraries may be useful for the manufacture of therapeutics for treating diseases and disorders.

Abstract: A computer-implemented method is disclosed for candidate antibody exploration. The method includes receiving sequence reads from a sequencing system, wherein each sequence read comprises a target gene for expressing a candidate antibody, wherein each sequence read is associated with a binding affinity to a target antigen. The method includes generating a sequence representation for each sequence read, representing the amino acid sequences of the sequence read. The method includes training a binding affinity prediction model with the sequence representations and the binding affinities. The method includes generating a synthetic candidate sequence read that is different from the sequence reads. The method includes generating a sequence representation for the synthetic candidate sequence read.

Abstract: Provided herein are anti-LAP antibodies (e.g., recombinant humanized, chimeric, and human anti-LAP antibodies) or antigen binding fragments thereof which have therapeutically beneficial properties, such as binding specifically to LAP-TGF?1 on cells but not to LAP-TGF?1 in extracellular matrix, as well as compositions including the same. Also provided are uses of these antibodies or antigen binding fragments in therapeutic applications, such as in the treatment of cancer, and diagnostic applications.

Abstract: Provided herein are high affinity antibodies or antigen binding fragments thereof that specifically bind to human tau-pS413. Also provided are compositions, kits, methods, and uses involving such antibodies or antigen binding fragments thereof.

Abstract: Provided herein are high affinity antibodies or antigen binding fragments thereof that specifically bind to human tau-pS413. Also provided are compositions, kits, methods, and uses involving such antibodies or antigen binding fragments thereof.

Abstract: Provided herein are high affinity antibodies or antigen binding fragments thereof that specifically bind to human tau-pS413. Also provided are compositions, kits, methods, and uses involving such antibodies or antigen binding fragments thereof.

Abstract: Heavy chain antibody variable domain (VHH) display libraries are described comprising human-like VHH comprising three synthetically generated complementarity determining region (CDR) areas in which the amino acids at each of positions 44 and 45 or positions 37, 44, 45, and 47 comprise the amino acid at the corresponding position of a Camelid VHH, wherein the amino acid positions are according to Kabat numbering Human-like VHHs identified using these libraries may be useful for the manufacture of therapeutics for treating diseases and disorders.

Abstract: A DRAM device and its manufacturing method are provided. The DRAM device includes an interlayer dielectric layer and capacitor units framed on a substrate. The interlayer dielectric layer has capacitor unit accommodating through holes and includes a first support layer, a composite dielectric layer, and a second support layer sequentially formed on the substrate. The composite dielectric layer includes at least one first insulating layer and second insulating layer alternately stacked. Each capacitor unit accommodating through hole forms a first opening in the second insulating layer and forms a second opening communicating with the first opening in the first insulating layer. The second opening is wider than the first opening. The capacitor units are formed in the capacitor unit accommodating through holes. The top of the capacitor unit is higher than the top surface of the interlayer dielectric layer and defines a recessed region.

Abstract: A capacitor and a manufacturing method thereof are provided. The capacitor includes a cup-shaped lower electrode, a capacitive dielectric layer, an upper electrode, and a support layer. The support layer includes an upper support layer surrounding an upper portion of the cup-shaped lower electrode, a middle support layer surrounding a middle portion of the cup-shaped lower electrode, and a lower support layer surrounding a lower portion of the cup-shaped lower electrode. Surfaces of the upper support layer, the middle support layer, and the lower support layer are covered by the capacitive dielectric layer.

Abstract: Provided herein are high affinity antibodies or antigen binding fragments thereof that specifically bind to human tau-pS413. Also provided are compositions, kits, methods, and uses involving such antibodies or antigen binding fragments thereof.

Abstract: A DRAM device and its manufacturing method are provided. The DRAM device includes an interlayer dielectric layer and capacitor units framed on a substrate. The interlayer dielectric layer has capacitor unit accommodating through holes and includes a first support layer, a composite dielectric layer, and a second support layer sequentially formed on the substrate. The composite dielectric layer includes at least one first insulating layer and second insulating layer alternately stacked. Each capacitor unit accommodating through hole forms a first opening in the second insulating layer and forms a second opening communicating with the first opening in the first insulating layer. The second opening is wider than the first opening. The capacitor units are formed in the capacitor unit accommodating through holes. The top of the capacitor unit is higher than the top surface of the interlayer dielectric layer and defines a recessed region.

Abstract: A capacitor and a manufacturing method thereof are provided. The capacitor includes a cup-shaped lower electrode, a capacitive dielectric layer, an upper electrode, and a support layer. The support layer includes an upper support layer surrounding an upper portion of the cup-shaped lower electrode, a middle support layer surrounding a middle portion of the cup-shaped lower electrode, and a lower support layer surrounding a lower portion of the cup-shaped lower electrode. Surfaces of the upper support layer, the middle support layer, and the lower support layer are covered by the capacitive dielectric layer.

Abstract: Provided is a capacitor structure including a substrate, a cup-shaped lower electrode, a top supporting layer, a capacitor dielectric layer, and an upper electrode. The cup-shaped lower electrode is located on the substrate. The top supporting layer surrounds the upper portion of the cup-shaped lower electrode. The top supporting layer includes a high-k material. Surfaces of the cup-shaped lower electrode and the top supporting layer are covered by the capacitor dielectric layer. A surface of the capacitor dielectric layer is covered by the upper electrode.

Abstract: A method of manufacturing a memory device includes following steps. A first dielectric layer is formed on the substrate between bit-line structures. First trenches are formed in the first dielectric layer. A second dielectric layer is formed to fill in the first trenches. A portion of the first dielectric layer is removed, so that a top surface of the first dielectric layer is lower than a top surface of the second dielectric layer. A first mask layer is formed to cover the top surfaces of the first and second dielectric layers. A first etching process is performed to form second trenches in the first dielectric layer. A third dielectric layer is formed to fill the second trenches. The first dielectric layer is removed to form contact openings between the second and third dielectric layers. A conductive material is formed to fill in the contact openings.

Abstract: Provided is a capacitor structure including a substrate, a cup-shaped lower electrode, a top supporting layer, a capacitor dielectric layer, and an upper electrode. The cup-shaped lower electrode is located on the substrate. The top supporting layer surrounds the upper portion of the cup-shaped lower electrode. The top supporting layer includes a high-k material. Surfaces of the cup-shaped lower electrode and the top supporting layer are covered by the capacitor dielectric layer. A surface of the capacitor dielectric layer is covered by the upper electrode.

Abstract: Provided is a capacitor structure including a substrate, a cup-shaped lower electrode, a top supporting layer, a capacitor dielectric layer, and an upper electrode. The cup-shaped lower electrode is located on the substrate. The top supporting layer surrounds the upper portion of the cup-shaped lower electrode. The top supporting layer includes a high-k material. Surfaces of the cup-shaped lower electrode and the top supporting layer are covered by the capacitor dielectric layer. A surface of the capacitor dielectric layer is covered by the upper electrode.

Abstract: Provided is a capacitor structure including a substrate, a cup-shaped lower electrode, a top supporting layer, a capacitor dielectric layer, and an upper electrode. The cup-shaped lower electrode is located on the substrate. The top supporting layer surrounds the upper portion of the cup-shaped lower electrode. The top supporting layer includes a high-k material. Surfaces of the cup-shaped lower electrode and the top supporting layer are covered by the capacitor dielectric layer. A surface of the capacitor dielectric layer is covered by the upper electrode.