Patents by Inventor Ming-Tao Chung

Ming-Tao Chung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Trench MOSFET with trench source contact having copper wire bonding
    Patent number: 7847346
    Abstract: A trench MOSFET with trench source contact structure having copper wire bonding is disclosed. By employing the proposed structure, die size can be shrunk into 30%˜70% with high cell density, and the spreading resistance is significantly reduce without adding expensive thick metal layer as prior art. To further reduce fabricating cost, copper wire bonding is used with requirement of thick Al alloys.
    Type: Grant
    Filed: November 26, 2008
    Date of Patent: December 7, 2010
    Assignee: Force Mos Technology Co., Ltd.
    Inventors: Ming-Tao Chung, Fu-Yuan Hsieh
  • Trench MOSFET with trench source contact having copper wire bonding
    Publication number: 20100127323
    Abstract: A trench MOSFET with trench source contact structure having copper wire bonding is disclosed. By employing the proposed structure, die size can be shrunk into 30%˜70% with high cell density, and the spreading resistance is significantly reduce without adding expensive thick metal layer as prior art. To further reduce fabricating cost, copper wire bonding is used with requirement of thick Al alloys.
    Type: Application
    Filed: November 26, 2008
    Publication date: May 27, 2010
    Applicant: FORCE MOS TECHNOLOGY CO. LTD.
    Inventors: Ming-Tao Chung, Fu-Yuan Hsieh