Abstract: A ferroelectric memory device and a semiconductor die are provided. The ferroelectric memory device includes a gate electrode; a channel layer, overlapped with the gate electrode; source/drain contacts, in contact with separate ends of the channel layer; a ferroelectric layer, lying between the gate electrode and the channel layer; and a first insertion layer, extending in between the ferroelectric layer and the channel layer, and comprising a metal carbonitride or a metal nitride.

Abstract: An optical structure, comprising an optical film having a substrate, wherein a first plurality of multi-faceted recesses are formed on the top surface of the substrate, wherein a prism module is disposed over the first optical film, wherein the prism module comprises a plurality of prism sheets that are stacked and bonded to each other.

Abstract: An optical film, comprising a substrate, wherein a first plurality of multi-faceted recesses are formed on the substrate, wherein the plurality of multi-faceted recesses are capable of scattering lights that enter into a second surface of the substrate, said first surface and said second surface are two opposite surfaces of the substrate.

Abstract: a composite barrier film, comprising: an ultra-thin barrier film, wherein the ultra-thin barrier film is capable of being water-resistant and oxygen-resistant; and a protection film, being attached on the ultra-thin barrier film for increasing the stiffness of the ultra-thin barrier film, wherein a thickness of the ultra-thin barrier film is less than a thickness of the protection film.

Abstract: A memory structure including a substrate, a charge storage layer, a first gate, a first dielectric layer, and a second dielectric layer is provided. The substrate includes a memory cell region. The charge storage layer is located on the substrate in the memory cell region. The charge storage layer has a recess. The charge storage layer has a tip around the recess. The first gate is located on the charge storage layer. The first dielectric layer is located between the charge storage layer and the substrate. The second dielectric layer is located between the first gate and the charge storage layer.

Abstract: A memory structure including a substrate, a charge storage layer, a first gate, a first dielectric layer, and a second dielectric layer is provided. The substrate includes a memory cell region. The charge storage layer is located on the substrate in the memory cell region. The charge storage layer has a recess. The charge storage layer has a tip around the recess. The first gate is located on the charge storage layer. The first dielectric layer is located between the charge storage layer and the substrate. The second dielectric layer is located between the first gate and the charge storage layer.

Abstract: A cable tie has a buckle member, an engaging band, and an insertion band. The buckle member has an engaging hole and an engaging block. The engaging block is resilient, is formed in the buckle member, and extends into the engaging hole. The engaging band is selectively inserted into the engaging hole and has two side faces and a thickness. At least one of the side faces has a channel having multiple unidirectional teeth. The insertion band is integrally formed on and extends from the buckle member and has a thickness. The insertion band is stacked with the engaging band when the insertion band and the engaging band are inserted into the engaging hole in the buckle member. The sum of the thicknesses of the insertion band and the engaging band is substantially equal to the height of the engaging hole.

Abstract: A portable electronic device including a first body, a second body, and an assembling structure is provided. The assembling structure includes a first assembling unit and a second assembling unit. The first assembling unit is adapted to hidden in one of the first and the second bodies, and the second assembling unit is disposed and hidden in another one of the first and the second bodies. When the first body is close to the second body, the first assembling unit is protruded out of the first body or the second body, and assembled to the second assembling unit, such that the first and the second bodies are fixed to each other.

Abstract: A SIM card securing mechanism for a mobile phone is described. A phone body has several positioning holes. One side of the securing plate is pivoted in the body to allow the securing plate to swivel relatively to the phone body. The securing plate has a plurality of elastic arms each of which has a protrusion. The securing plate is capable of being swiveled to a securing position relatively to the phone body to allow the protrusions to be fastened to the corresponding positioning holes via the elasticity of the elastic arms. Thus, the SIM card is sandwiched between the securing plate and the phone.

Abstract: A SIM card securing mechanism for a mobile phone is described. A phone body has several positioning holes. One side of the securing plate is pivoted in the body to allow the securing plate to swivel relatively to the phone body. The securing plate has a plurality of elastic arms each of which has a protrusion. The securing plate is capable of being swiveled to a securing position relatively to the phone body to allow the protrusions to be fastened to the corresponding positioning holes via the elasticity of the elastic arms.

Abstract: An auxiliary cavity expanding device for an operation which may prop up a body portion for laparoscopic surgery in order to make space for the performance of the operation includes a plurality of stays and a stay sleeve. The stays are secured to a stay end tube and an end of each stay is provided with a stay pusher to shift the stays relative to the stay sleeve. This shifting causes bending of the stays and expanding of the cavity for the operation. After expansion, the stays can be secured in a desired position by screws which secure the stays relative to the stay sleeve.