Abstract: A light emitting diode (LED) package includes at least one LED chip, a carrier, a light reflection element and at least one outside connection electrode. The LED chip is disposed on the carrier and a conductive line or a flip chip method is used to connect the electrodes of the LED chip to the external connection electrodes. A transparent material is used for fixing the light reflection element and carrier, and forming a lens.

Abstract: A new hinge design is used to connect a base unit and its display panel of a notebook computer. The new hinge design consists of a hinge bracket and a hinge shaft. The hinge bracket consists of a horizontal band, a vertical band, a barrel part and a bent band. The horizontal band and the vertical band are both mounted inside the base unit via holes thereon. The bent band bends from the vertical to the desired direction so as to shift a position of the hinge shaft. Owing to the position shift of the hinge shaft, the center of gravity of a notebook computer will also shift. The hinge shaft includes an attachment plate for mounting on the display panel.

Abstract: A structure of light-emitting diode (LED) dies having an AC loop (a structure of AC LED dies), which is formed with at least one unit of AC LED micro-dies disposed on a chip. The unit of AC LED micro-dies comprises two LED micro-dies arranged in mutually reverse orientations and connected with each other in parallel, to which an AC power supply may be applied so that the LED unit may continuously emit light in response to a positive-half wave voltage and a negative-half wave voltage in the AC power supply. Since each AC LED micro-die is operated forwardly, the structure of AC LED dies also provides protection from electrical static charge (ESD) and may operate under a high voltage.

Abstract: A light emitting diode (LED) based lighting device includes a plurality of circuit boards mounted to a base. Each circuit board has a curved or step-like edge contoured in correspondence to a particular curved surface. A plurality of sideways projecting LEDs is mounted along the curved edge of the circuit board. Thus, light from the LEDs is projected along a curved surface thereby particularly suitable for irregularly-shaped lighting devices having curved light projecting surfaces with low costs and simplified manufacturing process.

Abstract: A flip chip structure for light emitting diode includes a silicon substrate having a surface on which a number of conductors are mounted in an equally spaced manner with an open space formed between adjacent conductors and a number of chips each forming, on the same surface, positive terminal and negative terminal. The chips are mounted to the surface of the substrate in a flip chip fashion with the positive and negative terminals thereof engaging corresponding ones of the conductors of the substrate to form electrical connection therebetween whereby opposite ends of each conductor form positive and negative electrodes for the chips connected thereto. Ends of the conductors that are not engaged by the chips function as external terminals for connection with an external power source.

Abstract: A sideway-projecting light emitting diode (LED) includes an enclosure made of a light-transmitting material having first and second opposite side faces. The first side face forms a light-focusing portion. First and second conductive terminals are fixed in the enclosure and have tails extending beyond the second side face. A support member made of conductive materials has an inner end fixed in the enclosure between the first and second terminals and a remote end extending beyond the side face. A bowl is formed on the inner end of the support member for receiving and retaining a chip substantially confronting the light-focusing portion and electrically connected to the first and second terminals. A heat dissipation plate is mounted to the remote end of the support member for enhancing heat dissipation of the light emitting diode which in turn allows for increased power consumption of the light emitting diode and increased brightness of the light emitted from the light emitting diode.

Abstract: A light emitting diode (LED) packaging structure with built-in rectification circuit is disclosed. The LED packaging structure includes an LED and a rectification circuit is formed inside the LED. Thus, the LED packaging structure is capable to receive an alternate current from an electrical main by the rectification circuit which converts the alternate current into a direct current for the LED whereby the LED can be directly connected to the electrical main and powered thereby without use of additional and external rectification device.

Abstract: A output buffer circuit comprises a pull-up transistor, a boost transistor and a boost-controlling circuit. The pull-up transistor has a drain connected to a voltage source, a source connected to an I/O node and a gate connected to a data out through a voltage-boosting node. The boost transistor has a drain connected to the voltage source, and a source connected to the voltage-boosting node. The boost-controlling circuit has an input connected to the I/O node and an output connected to a gate of the boost transistor. The input of the boost-controlling circuit senses an excessive voltage at the I/O node and the output thereof turns on the boost transistor. Therefore, a gate voltage of the pull-up transistor is sustained to a predetermined high level when the pull-up transistor is turned off, and a voltage difference between the gate voltage and a source voltage of the pull-up transistor is reduced.

Abstract: A sideway-projecting light emitting diode (LED) includes an enclosure made of a light-transmitting material having first and second opposite side faces The first side face forms a light-focusing portion First and second conductive terminals are fixed in the enclosure and have tails extending beyond the second side face. A support member made of conductive materials has an inner end fixed in the enclosure between the first and second terminals and a remote end extending beyond the side face A bowl is formed on the inner end of the support member for receiving and retaining a chip substantially confronting the light-focusing portion and electrically connected to the first and second terminals.

Abstract: A output buffer circuit comprises a pull-up transistor, a boost transistor and a boost-controlling circuit. The pull-up transistor has a drain connected to a voltage source, a source connected to an I/O node and a gate connected to a data out through a voltage-boosting node. The boost transistor has a drain connected to the voltage source, and a source connected to the voltage-boosting node. The boost-controlling circuit has an input connected to the I/O node and an output connected to a gate of the boost transistor. The input of the boost-controlling circuit senses an excessive voltage at the I/O node and the output thereof turns on the boost transistor. Therefore, a gate voltage of the pull-up transistor is sustained to a predetermined high level when the pull-up transistor is turned off, and a voltage difference between the gate voltage and a source voltage of the pull-up transistor is reduced.

Abstract: A method for mounting an external heat dissipater to a light emitting diode is disclosed. The heat dissipater is comprised of at least one heat dissipation board. A long metal strip is conveyed through a working platform and is punched to form a number of heat dissipation boards connected thereto by connection sections. Light emitting diodes are positioned on the heat dissipation boards and the heat dissipation boards are cut and separated from the metal strip to form finished products of light emitting diodes to which a heat dissipater comprised of the heat dissipation board is mounted.

Abstract: A light emitting diode (LED) device includes a substrate having a major surface on which a number of LED chips are formed and arranged in a two-dimensional array. The LED chips have a p-type semiconductor and an n-type semiconductor. The n-type semiconductor of each LED chip is electrically connected to the p-type semiconductor of the adjacent LED chip, whereby the LED chips are connected in series. The p-type semiconductor of the starting LED chip and the n-type semiconductor of the ending LED chip are connected to conductors for electrical connection with an external power source. The arrangement of serially connected LED chips allows enhancement of the brightness of a single LED device when the size of the LED device is increased. The working voltage is also increased and the working current can be kept low. Interfacing equipment between the LED device and external power source can be simplified.

Abstract: A method of manufacturing power light emitting diodes mainly includes the steps of cutting a rolled dual-thickness sheet material into a plurality of continuous conductive frames in a roll form; cutting the rolled continuous conductive frames into segments, the number of conductive frames included in each segment depending on the molds designed for each packaging of the conductive frames with epoxy resin or silicon material; positioning chips, marking lines, and applying bonding agent on the conductive frames; packaging the conductive frames to obtain continuous half-finished products; and cutting apart the continuous half-finished products and cutting off legs to obtain finished products. The above-described method is developed based on conventional power transistor manufacturing process and enables automated mass-production of power light emitting diodes.

Abstract: A heat dissipation device is mounted to a light emitting diode device for removing heat from the light emitting diode which includes a substrate having a top side on which a light-emitting unit is formed and an opposite bottom side from which terminals extend. The heat dissipation device includes a plate made of heat conductive material and forming a receptacle for receiving and at least partially enclosing and physically engaging the substrate of the light emitting diode device for enhancing heat removal from the light emitting diode device.

Abstract: A cell arrangement scheme is disclosed. A first cell comprising a PMOS and a NMOS, wherein the source of the PMOS is connected with a power line VDD by a first metal line, the source of the NMOS is connected to a power line GND by a second, the drains of the PMOS and NMOS connected together by a third metal line, and the gate of the PMOS and the NMOS are connected together by a poly line. A second cell comprising a PMOS and a NMOS, wherein the source of the PMOS is connected with a power line VDD by a first metal line, the source of the NMOS is connected to a power line GND by a second metal line, the drains of the PMOS and NMOS connected together by a third metal line, and the gate of the PMOS and the NMOS are connected together by a poly line. Partially overlapping the first cell in a such a way that the first and the second metal line of the first cell is overlapped and in contact with the first and the second metal line of the second cell respectively.

Abstract: The present invention provides a power lateral diffused metal-oxide semiconductor (power LD MOS) transistor positioned in an active area of a substrate on a semiconductor wafer. The power LD MOS transistor has a source/drain, a first metal layer and a hexagonal-shaped gate. The first metal layer is positioned on a second dielectric layer, covering the first dielectric layer, the gate, and the surface of the substrate, and is electrically connected with the drain via a first plug. A hexagonal-shaped gate positioned on the substrate surrounds the drain, with a first end of the gate positioned on the first dielectric layer and a second end connecting with the source. A second metal layer positioned on the second dielectric layer electrically connects with the drain via a second plug.

Abstract: A light emitting diode includes a frame having increased thickness to enable a bowl portion thereof to have an increased depth more than 0.6 mm. Radiating blocks are provided below the frame and a layer of radiation-enhancing material is applied over bottoms of the frame and the radiating blocks to increase a radiating area of the light emitting diode. And, leads are downward extended from two outer sides of the frame. The light emitting diode therefore has increased radiation efficiency and light-emitting efficiency.

Abstract: A light emitting diode includes a frame having increased thickness to enable a bowl portion thereof to have an increased depth more than 0.6 mm. Radiating blocks are provided below the frame and a layer of radiation-enhancing material is applied over bottoms of the frame and the radiating blocks to increase a radiating area of the light emitting diode. And, leads are downward extended from two outer sides of the frame. The light emitting diode therefore has increased radiation efficiency and light-emitting efficiency.

Abstract: The present invention provides a power lateral diffused metal-oxide semiconductor (power LD MOS) transistor positioned in an active area of a substrate on a semiconductor wafer. The power LD MOS transistor has a source/drain, a first metal layer and a hexagonal-shaped gate. The first metal layer is positioned on a second dielectric layer, covering the first dielectric layer, the gate, and the surface of the substrate, and is electrically connected with the drain via a first plug. A hexagonal-shaped gate positioned on the substrate surrounds the drain, with a first end of the gate positioned on the first dielectric layer and a second end connecting with the source. A second metal layer positioned on the second dielectric layer electrically connects with the drain via a second plug.

Abstract: Lateral double diffusion metal oxide semiconductor field effect transistors (LDMOSFET) utilizing internal field rings and poly field plates are proposed to enhance electrical characteristic of the power devices. At least one internal field ring is built in a drift region of the device to increase depletion capability of the drift region. The field plates are formed over and insulated from the drift region and preferably at least one of the field plates is designed to be positioned directly above each P/N junction created between the drift region and each internal field ring. These field plates according to the present invention are coupled to drain region of the LDMOSFET to facilitate electrical field distribution of the device. In our preferred embodiments, the field plates are made of polysilicon, the fabrication of which is similar to the formation of polysilicon gate layer in a typical CMOS process.