Abstract: A method for preparing a semiconductor sample with an etched pit suitable for microscope observation is provided, including that a semiconductor sample piece is provided, the semiconductor sample piece including a sacrificial layer and a supporting layer which are stacked, and a trench which penetrates through the sacrificial layer and the supporting layer to expose a pit on a surface of a bottom metal layer; the semiconductor sample piece is steeped by placing it in an etching solution to remove the sacrificial layer; an adhesive tape is pasted on the surface of the semiconductor sample piece after the sacrificial layer is removed; and the adhesive tape is torn to remove the supporting layer above the pit to expose the pit.

Abstract: The embodiments of the disclosure provide an authentication method performed through a wallet connection interface, an authentication system, and a computer readable storage medium. The method includes: in response to determining that an authentication function of an application on a wearable device is triggered by a user, generating authentication information related to the wallet connection interface; sending the authentication information to a smart device and a server corresponding to the wallet connection interface; in response to receiving the authentication information, providing wallet information of a wallet application of the smart device to the server, wherein the authentication information and the wallet information are for triggering the server to make a match between the wearable device and the smart device; and in response to determining that the wearable device has been matched with the smart device, determining that the user has been authenticated.

Abstract: The embodiments of the disclosure provide a method for operating a mirrored content under a mirror mode and a computer readable storage medium. The method includes: enabling a touch capturing function on the smart device, wherein the touch capturing function intercepts a touch event inputted to the smart device; in response to determining that a raw touch event is intercepted by the smart device, translating the raw touch event to a first touch event and sending the first touch event to a host, wherein a display screen of the smart device is mirrored to a visual content shown by the host, and the first touch event triggers the host to report a second touch event happened in the visual content; disabling the touch capturing function and receiving the second touch event from the host; and performing a first operation in response to the second touch event and enabling the touch capturing function on the smart device.

Abstract: A method for preparing a semiconductor sample with an etched pit suitable for microscope observation is provided, including that a semiconductor sample piece is provided, the semiconductor sample piece including a sacrificial layer and a supporting layer which are stacked, and a trench which penetrates through the sacrificial layer and the supporting layer to expose a pit on a surface of a bottom metal layer; the semiconductor sample piece is steeped by placing it in an etching solution to remove the sacrificial layer; an adhesive tape is pasted on the surface of the semiconductor sample piece after the sacrificial layer is removed; and the adhesive tape is torn to remove the supporting layer above the pit to expose the pit.

Abstract: An electronic apparatus includes a substrate structure, a plurality of pillar bases, at least one light emitting device and a plurality of electrically connective materials. The substrate structure has a top surface and a bottom surface opposite to the top surface, and included a non III-V group material. The pillar bases are disposed adjacent to the top surface of the substrate structure. The light emitting device includes a III-V group material, and comprises a plurality of electrode pads. The electrically connective materials are interposed between the electrode pads of the light emitting device and the pillar bases.

Abstract: One method includes forming an anti-ferromagnetic layer on a substrate. A ferromagnetic layer may be formed on the anti-ferromagnetic layer. The ferromagnetic layer includes a first, second and third portions where the second portion is located between the first and third portions. A first ion irradiation is performed to only one portion of the ferromagnetic layer. A second ion irradiation is performed to another portion of the ferromagnetic layer.

Abstract: Methods and systems for forming a material on a substrate are provided. Aspects of the methods involve the controlled introduction of a plurality of vapor reactants into a deposition chamber to form a material on the substrate having uniform surface roughness, conformality, thickness and composition. Aspects of the systems include a vapor feed component, a vapor distribution component, a containment component, and a controller configured to operate the systems to carry out the methods.

Abstract: MTJ stack structures for an MRAM device include an MTJ stack having a pinned ferromagnetic layer over a pinning layer, a tunneling barrier layer over the pinned ferromagnetic layer, a free ferromagnetic layer over the tunneling barrier layer, a conductive oxide layer over the free ferromagnetic layer, and an oxygen-based cap layer over the conductive oxide layer.

Abstract: One method includes forming an anti-ferromagnetic layer on a substrate. A ferromagnetic layer may be formed on the anti-ferromagnetic layer. The ferromagnetic layer includes a first, second and third portions where the second portion is located between the first and third portions. A first ion irradiation is performed to only one portion of the ferromagnetic layer. A second ion irradiation is performed to another portion of the ferromagnetic layer.

Abstract: A semiconductor memory device includes a first ferromagnetic layer magnetically pinned and positioned within a first region of a substrate; a second ferromagnetic layer approximate the first ferromagnetic layer; and a barrier layer interposed between the first ferromagnetic layer and the first portion of the second ferromagnetic layer. The second ferromagnetic layer includes a first portion being magnetically free and positioned within the first region; a second portion magnetically pinned to a first direction and positioned within a second region of the substrate, the second region contacting the first region from a first side; and a third portion magnetically pinned to a second direction and positioned within a third region of the substrate, the third region contacting the first region from a second side.

Abstract: A magnetoresistive random access memory (MRAM) cell includes a magnetic tunnel junction (MTJ), a top electrode disposed over the MTJ, a bottom electrode disposed below the MTJ, and an induction line disposed to one side of the MTJ. The induction line is configured to induce a perpendicular magnetic field at the MTJ.

Abstract: Apparatus and methods are disclosed herein for a reverse-connection STT MTJ element of a MRAM to overcome the source degeneration effect when switching the magnetization of the MTJ element from the parallel to the anti-parallel direction. A memory cell of a MRAM having a reverse-connection MTJ element includes a switching device having a source, a gate, and a drain, and a reverse-connection MTJ device having a free layer, a fixed layer, and an insulator layer interposed between the free layer and the fixed layer. The free layer of the reverse-connection MTJ device is connected to the drain of the switching device and the fixed layer is connected to a bit line (BL). The reverse-connection MTJ device applies the lower IMTJ capability of the memory cell caused by the source degeneration effect to the less stringent IMTJ(AP->P) while preserving the higher IMTJ capability for the more demanding IMTJ(P->AP).

Abstract: The present disclosure provides a MTJ stack for an MRAM device. The MTJ stack includes a pinned ferromagnetic layer over a pinning layer; a tunneling barrier layer over the pinned ferromagnetic layer; a free ferromagnetic layer over the tunneling barrier layer; a conductive oxide layer over the free ferromagnetic layer; and a oxygen-based cap layer over the conductive oxide layer.

Abstract: A magnetoresistive random access memory (MRAM) cell includes a magnetic tunnel junction (MTJ), a top electrode disposed over the MTJ, a bottom electrode disposed below the MTJ, and an induction line disposed to one side of the MTJ. The induction line is configured to induce a perpendicular magnetic field at the MIJ.

Abstract: A semiconductor memory device includes a first ferromagnetic layer magnetically pinned and positioned within a first region of a substrate; a second ferromagnetic layer approximate the first ferromagnetic layer; and a barrier layer interposed between the first ferromagnetic layer and the first portion of the second ferromagnetic layer. The second ferromagnetic layer includes a first portion being magnetically free and positioned within the first region; a second portion magnetically pinned to a first direction and positioned within a second region of the substrate, the second region contacting the first region from a first side; and a third portion magnetically pinned to a second direction and positioned within a third region of the substrate, the third region contacting the first region from a second side.

Abstract: Apparatus and methods are disclosed herein for a reverse-connection STT MTJ element of a MRAM to overcome the source degeneration effect when switching the magnetization of the MTJ element from the parallel to the anti-parallel direction. A memory cell of a MRAM having a reverse-connection MTJ element includes a switching device having a source, a gate, and a drain, and a reverse-connection MTJ device having a free layer, a fixed layer, and an insulator layer interposed between the free layer and the fixed layer. The free layer of the reverse-connection MTJ device is connected to the drain of the switching device and the fixed layer is connected to a bit line (BL). The reverse-connection MTJ device applies the lower IMTJ capability of the memory cell caused by the source degeneration effect to the less stringent IMTJ(AP->P) while preserving the higher IMTJ capability for the more demanding IMTJ(P->AP).

Abstract: A method for displaying a resized window includes receiving a resizing message, generating a window having a second size according to the resizing message and a window having a first size and located at a position corresponding to a first reference point, and displaying the window having the second size at a position different from the position corresponding to the first reference point. After generating the windows, the window having the second size is not displayed at the position corresponding to the first reference point.

Abstract: A graphic user interface and an establishing method thereof are provided. Firstly, a first window is established. The first window has a window pattern and the first window is established by merging the window pattern with a desktop pattern of a desktop. Next, a second window is established. The second window is shown on the first window, and has a linking connection with the first window. The linking connection includes a relative position connection and a relative size connection. Then, a plurality of third windows are established. The third windows are shown on the second window, and have a plurality of implied connections with the second window respectively. The implied connections are established by an operation system. When the first window performs an action, the second window performs the action according to the linking connection, and the third windows are shown on the second window according to the implied connections.

Abstract: An image capture system capable of a plurality of image capture processes is equipped with a button on its surface and a storage device storing a predetermined folder. When the button is activated, the system determines the active window thereof and automatically performs one of the capture processes based on the determination, thus an image shown on a display is captured and stored in the predetermined folder.

Abstract: A method for displaying a resized window includes receiving a resizing message, generating a window having a second size according to the resizing message and a window having a first size and located at a position corresponding to a first reference point, and displaying the window having the second size at a position different from the position corresponding to the first reference point. After generating the windows, the window having the second size is not displayed at the position corresponding to the first reference point.