Abstract: A distributed data storage system and method are disclosed. The distributed data storage system includes: an interface machine process module; at least one service process module; and at least one storage module. The interface machine process module is configured to receive a storage request containing data to be stored from a storage requester and distribute the storage request to one of the at least one service process module; the service process module is configured to receive the storage request from the interface machine process module and assign a storage identifier for the date contained in the storage request; the at least one storage module is configured to store the data according to the storage identifier assigned by the service process module. The distributed data storage system and method of the present invention can provide stable, simple, highly efficient, and low cost mass data storage and read/write services for users.

Abstract: Method, system and device for acquiring directionally published microblog messages are disclosed. A first client acquires an instruction for reading a microblog message from a first user, wherein the instruction comprises a keyword of the first user; the first client extracts directionally published microblog messages matching with the keyword of the first user from an outbox of a second user, wherein the second user is followed the first user and has a directional publishing authority; and the first terminal displays the extracted directionally published microblog messages to the first user. Through the solutions provided the present disclosure, a first user only needs to access an outbox of a second user for acquiring a microblog message, and thus the first user does not need to delete the microblog message. The operation of the first user is simplified, and thereby the user experience will be improved.

Abstract: A stack can be patterned by a first etch process to form an opening defining sidewall surfaces of a patterned material stack. A masking layer can be non-conformally deposited on sidewalls of an upper portion of the patterned material stack, while not being deposited on sidewalls of a lower portion of the patterned material stack. The sidewalls of a lower portion of the opening can be laterally recessed employing a second etch process, which can include an isotropic etch component. The sidewalls of the upper portion of the opening can protrude inward toward the opening to form an overhang over the sidewalls of the lower portion of the opening. The overhang can be employed to form useful structures such as an negative offset profile in a floating gate device or vertically aligned control gate electrodes for vertical memory devices.

Abstract: A method for pushing micro-blogs is provided. The method is performed at micro-blog pushing server. In this method, a set of keywords is determined, each keyword is associated with at least one of micro-blogs received at a micro-blog receiving server, an index of the plurality of micro-blogs is created using the set of keywords, a subset of keywords, each having an interest value greater than a preset threshold, are obtained, micro-blogs associated with the obtained keywords are searched for, the searched out micro-blogs are sorted based on a timeline or based on relevancies of the micro-blogs to the keywords having interest values greater than a preset threshold, and then the sorted micro-blogs are pushed to the user. In addition, an apparatus, a system and a non-transitory computer-readable storage medium related to the method are also provided.

Abstract: A NAND flash memory chip is formed by depositing two N-type polysilicon layers. The upper N-type polysilicon layer is then replaced with P-type polysilicon and barrier layer in the array area only, while maintaining the upper N-type polysilicon layer in the periphery. In this way, floating gates are substantially P-type while gates of peripheral transistors are N-type.

Abstract: A method and system for managing user privileges are disclosed. The method includes the steps of receiving a first user's request to publish information and receiving groups of users defined by the first user, the groups of users having access to the to be published information. The method further includes the step of submitting the first user's request to a server, the request including an identity of the first user, information to be published, and the definition of the groups of users having access to the information. The method and system consistent with the present disclosure may improve the information dissemination process by enabling a user to proactively manage user privileges.

Abstract: A method and a system for data migration are described, the method for data migration including: slicing data in an original system to obtain a data slice; importing the data slice into a new system; and redoing, in the new system, respective data corresponding to at least one pre-recorded write request according to a sequence number order of the at least one pre-recorded write request, wherein the at least one pre-recorded write request above is to simultaneously write to both the original system and the new system. In the method and the system, data in an original system can be seamlessly imported to a new system without forbidding writes to the original system, and the data in the new system can be recovered to the latest by a redo technique. Without any awareness of users, the data migration can be achieved in the background.

Abstract: Non-voltage storage and techniques for fabricating non-volatile storage are disclosed. In some embodiments, at least a portion of the control gates of non-volatile storage elements are formed from p-type polysilicon. In one embodiment, a lower portion of the control gate is p-type polysilicon. The upper portion of the control gate could be p-type polysilicon, n-type polysilicon, metal, metal nitride, etc. P-type polysilicon in the control gate may not deplete even at high Vpgm. Therefore, a number of problems that could occur if the control gate depleted are mitigated. For example, a memory cell having a control gate that is at least partially p-type polysilicon might be programmed with a lower Vpgm than a memory cell formed from n-type polysilicon.

Abstract: An apparatus for estimating a condition of a battery includes a mode identifying unit configured to identify a usage mode of the battery during a period of time and its corresponding attenuation curve, according to recorded data on battery usage, stored usage modes of the battery and attenuation curves corresponding to the various usage modes, the attenuation curve representing a change of a fully charged capacity of the battery with battery usage; and a condition estimating unit configured to calculate battery degradation according to the recorded data, the identified usage mode and its corresponding attenuation curve, the degradation representing a quantity of the fully charged capacity of the battery that is reduced over the battery usage. The condition of the battery is estimated so as to rationally judge the residual value of the battery in operation.

Abstract: A method for generating a Simple Object Access Protocol (SOAP) message in XML during execution of a process in a SOA-based process engine apparatus and a corresponding process engine apparatus. The method includes: generating and storing an XML character string containing a fixed SOAP message skeleton; generating and storing an XML character string containing an instance-constant variable; generating an XML character string containing a dynamic variable; and concatenating the XML character string containing the fixed SOAP message skeleton and the XML character string containing the instance-constant variable as previously stored and the XML character string containing the dynamic variable by a character string concatenating operation to generate a SOAP message. A process engine apparatus including a message analyzer unit, a message pre-composer unit, a character string depository, and a message composer unit is also provided.

Abstract: Electrical isolation in non-volatile memory is provided by air gaps formed using sacrificial films of differing etch rates. A high etch rate material is formed in an isolation trench. Flowable chemical vapor deposition processes are used to form high etch rate films, and curing is performed to increase their etch rate. A low etch material is formed over the high etch rate material and provides a controlled etch back between charge storage regions in a row direction. A discrete low etch rate layer can be formed or the high etch rate material can be oxidized to form an upper region with a lower etch rate. A controlled etch back enables formation of a wrap-around dielectric and control gate structure in the row direction with minimized variability in the dimensions of the structures. At least a portion of the high etch rate material is removed to form air gaps for isolation.

Abstract: The invention discloses a method for storing data and a device of implementing the same. The method comprises receiving a request for storing data sent by a user and storing the data to an SSD according to the received request. The device comprises a request receiving module used to receive the request storing data and an SSD storage module used to store the data to an SSD according to the received request. The invention ensures consistency of data storage by storing data to an SSD according to the received request, thereby reducing data redundancy caused by using a cache layer to cache the data in the prior art. Additionally, the use of a single layer of an SSD to store data avoids the need of reloading data in the cache layer once a machine is power-down, thereby reducing the complexity of system design and the cost of operation and maintenance.

Abstract: A microblog server receives sharing information required for sharing a microblog message transmitted by a microblog client. Generate a microblog data packet according to the sharing information, and transmit the microblog data packet to an instant messaging (IM) client, such that the IM client displays the microblog message to be shared according to the microblog data packet.

Abstract: A system and method for extracting a skeleton topology structure for an electric power grid, the method comprising: receiving a description of a topology sub-structure corresponding with user's need and a description of skeleton topology sub-structure extracted from the topology sub-structure; generating a first incidence matrix based on the description of the topology sub-structure and a second incidence matrix based on the description of the skeleton topology sub-structure; generating a third incidence matrix based on a primary topology structure of electric power grid; searching from the third incidence matrix a sub-matrix that matches the first incidence matrix; obtaining a fourth incidence matrix by using the second incidence matrix to transform the matching sub-matrix; and generating a skeleton topology structure corresponding to the primary topology structure based on the fourth incidence matrix.

Abstract: A method for generating a Simple Object Access Protocol (SOAP) message in XML during execution of a process in a SOA-based process engine apparatus and a corresponding process engine apparatus. The method includes: generating and storing an XML character string containing a fixed SOAP message skeleton; generating and storing an XML character string containing an instance-constant variable; generating an XML character string containing a dynamic variable; and concatenating the XML character string containing the fixed SOAP message skeleton and the XML character string containing the instance-constant variable as previously stored and the XML character string containing the dynamic variable by a character string concatenating operation to generate a SOAP message. A process engine apparatus including a message analyzer unit, a message pre-composer unit, a character string depository, and a message composer unit is also provided.

Abstract: Non-voltage storage and techniques for fabricating non-volatile storage are disclosed. In some embodiments, at least a portion of the control gates of non-volatile storage elements are formed from p-type polysilicon. In one embodiment, a lower portion of the control gate is p-type polysilicon. The upper portion of the control gate could be p-type polysilicon, n-type polysilicon, metal, metal nitride, etc. P-type polysilicon in the control gate may not deplete even at high Vpgm. Therefore, a number of problems that could occur if the control gate depleted are mitigated. For example, a memory cell having a control gate that is at least partially p-type polysilicon might be programmed with a lower Vpgm than a memory cell formed from n-type polysilicon.

Abstract: A topology structure of a power system is acquired. At least one unification set in the power system is identified based on the topology structure. Devices belonging to the same unification set have the same outage state. The at least one unification set is recorded, so as to concurrently maintain devices belonging to the same unification set. Advantageously, one or more embodiments reduce number of outages caused by power system device maintenance.

Abstract: Air gap isolation in non-volatile memory arrays and related fabrication processes are provided. Electrical isolation between adjacent active areas of a substrate can be provided, at least in part, by bit line air gaps that are elongated in a column direction between the active areas. A blocking layer can be introduced to inhibit the formation of materials in the air gaps during subsequent process steps. The blocking layer may result in selective air gap formation or varying dimension of air gaps at cell areas relative to select gate areas in the memory. The blocking layer may result in a smaller vertical dimension for air gaps formed in the isolation regions at select gate areas relative to cell areas. The blocking layer may inhibit formation of air gaps at the select gate areas in other examples. Selective etching, implanting and different isolation materials may be used to selectively define air gaps.

Abstract: Non-voltage storage and techniques for fabricating non-volatile storage are disclosed. In some embodiments, at least a portion of the control gates of non-volatile storage elements are formed from p-type polysilicon. In one embodiment, a lower portion of the control gate is p-type polysilicon. The upper portion of the control gate could be p-type polysilicon, n-type polysilicon, metal, metal nitride, etc. P-type polysilicon in the control gate may not deplete even at high Vpgm. Therefore, a number of problems that could occur if the control gate depleted are mitigated. For example, a memory cell having a control gate that is at least partially p-type polysilicon might be programmed with a lower Vpgm than a memory cell formed from n-type polysilicon.

Abstract: A system for detecting conflicts between a power supply guarantee request (PSGR) and an outage request (OR) in a power grid. The system comprises: an accompanying outage analysis device for receiving a first outage device set including OR related devices, and using geographic information about devices in the power grid to determine a second outage device set, the second outage device set including devices in the first outage device set and accompanying outage devices that need to be in outage together with the devices in the first outage device set; an outage scale determination device for using topology information about the power grid to determine a power grid outage scale in which all of the devices in the second outage device set can be in outage; and a conflict detection device for receiving a power supply guarantee device set including PSGR related devices, and judging, for each device in the power supply guarantee device set, whether the device is included in the power grid outage scale.