Abstract: A method for manufacturing an RFID tag integrated into an artwork includes steps of selectively coating a watertight layer on a periphery of the artwork; printing a conductive ink on a surface of a polyethylene terephthalate film; heating the printed conductive ink on the surface of the polyethylene terephthalate film, and curing the conductive ink as an antenna of the RFID tag; removing the antenna from the polyethylene terephthalate film to be packaged as the RFID tag with an RFID chip; pasting the RFID tag on the periphery of the artwork with AB adhesive provided on an interface between the RFID tag and the artwork; and coating a protective layer on a periphery of the RFID tag to prevent exposure to the air.

Abstract: A method for separating metal nanoparticles from colloidal metal solution includes providing a colloidal metal solution, including a plurality of metal nanoparticles; mixing a precipitating agent with the colloidal metal solution for maintaining the power of hydrogen value (pH) of the colloidal metal solution in a specific value; keeping the colloidal metal solution stationary for a static time at an environmental temperature such that the metal nanoparticle precipitates from the colloidal metal solution, and the colloidal metal solution forms a supernatant and a precipitating liquid; separating a precipitate from the precipitating liquid by a filtering process; and liquid blasting the precipitate by a first solvent to obtain the metal nanoparticles.

Abstract: A method for separating metal nanoparticles from colloidal metal solution includes providing a colloidal metal solution, including a plurality of metal nanoparticles; mixing a precipitating agent with the colloidal metal solution for maintaining the power of hydrogen value (pH) of the colloidal metal solution in a specific value; keeping the colloidal metal solution stationary for a static time at an environmental temperature such that the metal nanoparticle precipitates from the colloidal metal solution, and the colloidal metal solution forms a supernatant and a precipitating liquid; separating a precipitate from the precipitating liquid by a filtering process; and liquid blasting the precipitate by a first solvent to obtain the metal nanoparticles.

Abstract: A method of fabricating barium titanate powders uses titanium tetrachloride and barium hydroxide as reactants in a reaction solution. The pH value of the reaction solution is adjusted to strongly alkaline range by adding potassium hydroxide. Nitrogen is charged into a reaction tank at normal pressure, and the reaction solution is heated at 80–102°. The solution is intensively stirred at constant temperature, and then subjected to a hydro-thermal reflux. Then, the solution is treated through an ion exchange resin and dried to obtain a cubic BaTiO3 powders.

Abstract: A process for preparing lithium cobalite powders uses an oxalate gel method in which lithium nitrate and cobalt nitrate are used as starting reactants, oxalic acid as a chelating agent and water as a solvent. Oxalate sol is formed by the chelating reaction. After poly-condensation is conducted by heating, oxalate gel is formed. Continue heating to remove the solvent and water generated by the reaction to obtain dried gel powders. The dried gel powders are then thermally decomposed and sintered to form lithium cobalite powders LiCoO2 of a halite-type layered structure.

Abstract: A method of fabricating barium titanate powders uses titanium tetrachloride and barrium hydroxide as reactants in a reaction solution. The pH value of the reaction solution is adjusted to strongly alkaline range by adding potassium hydroxide. Nitrogen is charged into a reaction tank at normal pressure, and the reaction solution is heated at 80-102° C. The solution is intensively stirred at constant temperature, and then subjected to a hydro-thermal reflux. Then, the solution is treated through an ion exchange resin and dried to obtain a cubic BaTiO3 powders.

Abstract: A chemical mechanical polishing slurry is provided for the copper layer on a wafer. The slurry contains colloidal silica and a chemical etching agent composed of hydrogen peroxide, acetic acid, and phthalic acid. The hydrogen peroxide oxides the surface of the copper layer. The acetic acid then reacts with the copper oxide to form copper acetate. This selective and functional chemical reaction mechanism can speed up the polishing removal rate and reduce scratches. The phthalic acid functions as both a pH buffering agent and a complexing agent to make the reaction concentration at each point of the wafer surface more homogeneous. Therefore, the copper layer during the chemical mechanical polishing process has a high removal rate and uniformity.

Abstract: A method of polishing metal and barrier layer interconnect integrated with an extremely low dielectric constant material includes steps of (A) preparing a wafer composed of a copper layer and the extremely low dielectric constant material, (B) treating the copper layer chemically to produce a hard and brittle surface residual formed on the surface of the copper layer, (C) keeping polishing the surface residual by ultrasonic waves, (D) polishing a barrier layer of wafer by the ultrasonic waves, thereby polishing the wafer successfully.