Abstract: An integrated circuit package includes a substrate having first and second surfaces and a plurality of conductive traces therebetween and a semiconductor die mounted on the first surface of the substrate. A plurality of wire bonds connect the semiconductor die to ones of the conductive traces of the substrate and an encapsulant encapsulates the wirebonds and the semiconductor die. A heat spreader has a cap, at least a portion of the cap extending inwardly toward and being spaced from the semiconductor die. The encapsulant fills the space between the portion of the cap and the semiconductor die. The heat spreader further has at least one sidewall extending from the cap, the at least one sidewall disposed on the substrate. A ball grid array is disposed on the second surface of the substrate, bumps of the ball grid array being in electrical connection with ones of the conductive traces.

Abstract: A semiconductor package includes a semiconductor unit containing an active circuitry layer. The semiconductor package also includes a plurality of bonding pads on the active circuitry layer, which are configured to be connected to corresponding external conductive connectors. The semiconductor package also includes a protective sealant coating filling grooved edges of the active circuitry layer. The protective sealant coating contains an exterior wafer-singulated surface.

Abstract: A semiconductor package includes a semiconductor unit containing an active circuitry layer. The semiconductor package also includes a plurality of bonding pads on the active circuitry layer, which are configured to be connected to corresponding external conductive connectors. The semiconductor package also includes a protective sealant coating filling grooved edges of the active circuitry layer. The protective sealant coating contains an exterior wafer-singulated surface.

Abstract: An integrated circuit package includes a substrate having first and second surfaces and a plurality of conductive traces therebetween and a semiconductor die mounted on the first surface of the substrate. A plurality of wire bonds connect the semiconductor die to ones of the conductive traces of the substrate and an encapsulant encapsulates the wirebonds and the semiconductor die. A heat spreader has a cap, at least a portion of the cap extending inwardly toward and being spaced from the semiconductor die. The encapsulant fills the space between the portion of the cap and the semiconductor die. The heat spreader further has at least one sidewall extending from the cap, the at least one sidewall disposed on the substrate. A ball grid array is disposed on the second surface of the substrate, bumps of the ball grid array being in electrical connection with ones of the conductive traces.

Abstract: An integrated circuit package includes a substrate having first and second surfaces and a plurality of conductive traces therebetween and a semiconductor die mounted on the first surface of the substrate. A plurality of wire bonds connect the semiconductor die to ones of the conductive traces of the substrate and an encapsulant encapsulates the wirebonds and the semiconductor die. A heat spreader has a cap, at least a portion of the cap extending inwardly toward and being spaced from the semiconductor die. The encapsulant fills the space between the portion of the cap and the semiconductor die. The heat spreader further has at least one sidewall extending from the cap, the at least one sidewall disposed on the substrate. A ball grid array is disposed on the second surface of the substrate, bumps of the ball grid array being in electrical connection with ones of the conductive traces.

Abstract: According to one embodiment, a semiconductor die having increased usable area has at least six sides. The semiconductor die has a reduced stress at each corner of the die, resulting in smaller keep out zones near the corners of the semiconductor die, which allow the placement of bond pads near each corner of the die. The semiconductor die further allows the placement of active circuitry near each corner of the semiconductor die. One embodiment results in a 5.0% increase in usable area on the semiconductor die.

Abstract: Aspects of a method and system for mitigating risk of electrostatic discharge in a system on chip are provided. In this regard, for an IC comprising a plurality of portions electrically isolated from one another within the IC, ESD current may be routed via one or more paths within and/or on a package to which the IC is bonded. The one or more paths may electrically couple two or more of the portions of the IC. The one or more paths may have low impedance at DC and high impedance at one or more frequencies utilized in the integrated circuit. One of the portions of the IC may be a ground plane for RF circuitry. One of the portions of the IC may be a ground plane for digital circuitry. The one or more paths may be fabricated in one or more metal layers of said package.

Abstract: Aspects of a method and system for mitigating risk of electrostatic discharge in a system on chip are provided. In this regard, for an IC comprising a plurality of portions electrically isolated from one another within the IC, ESD current may be routed via one or more paths within and/or on a package to which the IC is bonded. The one or more paths may electrically couple two or more of the portions of the IC. The one or more paths may have low impedance at DC and high impedance at one or more frequencies utilized in the integrated circuit. One of the portions of the IC may be a ground plane for RF circuitry. One of the portions of the IC may be a ground plane for digital circuitry. The one or more paths may be fabricated in one or more metal layers of said package.

Abstract: According to one embodiment, a semiconductor die for increasing usable area of a wafer and for increasing yield has a substantially hexagonal shape. The wafer can have, for example, a circular shape. The semiconductor die can be diced by, for example, using a water-jet-guided laser. In one embodiment, the semiconductor die results in an approximately 2.0% to 4.0% reduction in the unusable area of the wafer. Moreover, the substantially hexagonal shape of the semiconductor die reduces stress at corners of the semiconductor die, thus increasing the yield of the wafer.

Abstract: According to one embodiment, a semiconductor die having increased usable area has at least six sides. The semiconductor die has a reduced stress at each corner of the die, resulting in smaller keep out zones near the corners of the semiconductor die, which allow the placement of bond pads near each corner of the die. The semiconductor die further allows the placement of active circuitry near each corner of the semiconductor die. One embodiment results in a 5.0% increase in usable area on the semiconductor die.

Abstract: A ball grid array package is manufactured by mounting a semiconductor die to a first surface of a substrate and mounting a die adapter to the semiconductor die. The semiconductor die is wire bonded to ones of conductive traces of the substrate. A collapsible spacer is mounted to the substrate and the substrate is releasably clamped to an upper side of a mold cavity. A heat spreader and at least one collapsible spacer are placed in the mold cavity such that the collapsible spacer is disposed between the heat spreader and the substrate. A molding compound is molded in the mold, thereby molding the semiconductor die, the substrate, the wire bonds, the die adapter, the at least one collapsible spacer and the heat spreader into the molding compound to provide a molded package. A ball grid array is formed on a second surface of the substrate, bumps of the ball grid array being electrically connected to the conductive traces and the integrated circuit package is singulated.

Abstract: A ball grid array package is manufactured by mounting a semiconductor die to a first surface of a substrate and mounting a die adapter to the semiconductor die. The semiconductor die is wire bonded to ones of conductive traces of the substrate. A collapsible spacer is mounted to the substrate and the substrate is releasably clamped to an upper side of a mold cavity. A heat spreader and at least one collapsible spacer are placed in the mold cavity such that the collapsible spacer is disposed between the heat spreader and the substrate. A molding compound is molded in the mold, thereby molding the semiconductor die, the substrate, the wire bonds, the die adapter, the at least one collapsible spacer and the heat spreader into the molding compound to provide a molded package. A ball grid array is formed on a second surface of the substrate, bumps of the ball grid array being electrically connected to the conductive traces and the integrated circuit package is singulated.

Abstract: A ball grid array package is manufactured by mounting a semiconductor die to a first surface of a substrate array. Wires are bonded between the semiconductor die and ones of conductive traces of the substrate array. The heat spreader is disposed in a mold and the substrate array is releasably clamped to a top die of the mold. The semiconductor die, the substrate array, the wire bonds and the heat spreader are molded into a molding material to provide a molded package. Next, the molded package is removed from the mold and a plurality of solder balls are added in the form of a ball grid array on a second surface of the substrate array such that bumps of the ball grid array are electrically connected to the conductive traces. The integrated circuit package is then singulated from a remainder of the substrate array.

Abstract: An integrated circuit package including a substrate having opposing first and second surfaces. The substrate has conductive traces disposed therein. A semiconductor die is mounted on the first surface of the substrate and a silicon heat sink disposed on a portion of the semiconductor die. A plurality of wire bonds connect the semiconductor die to the conductive traces of the substrate and an overmold material covers the first surface of the substrate and a remainder of the semiconductor die. A ball grid array is disposed on the second surface of the substrate. Bumps of the ball grid array are in electrical connection with the conductive traces.

Abstract: An integrated circuit package including a substrate having opposing first and second surfaces. The substrate has conductive traces disposed therein. A semiconductor die is mounted on the first surface of the substrate and a silicon heat sink disposed on a portion of the semiconductor die. A plurality of wire bonds connect the semiconductor die to the conductive traces of the substrate and an overmold material covers the first surface of the substrate and a remainder of the semiconductor die. A ball grid array is disposed on the second surface of the substrate. Bumps of the ball grid array are in electrical connection with the conductive traces.

Abstract: An integrated circuit package is provided. The package includes a substrate having first and second surfaces and a plurality of conductive traces therebetween. A semiconductor die is mounted on the first surface of the substrate and an adapter disposed on the semiconductor die. A plurality of wire bonds connect the semiconductor die to ones of the conductive traces of the substrate, and an encapsulant encapsulates the wirebonds and a remainder of the semiconductor die. A heat spreader has a top portion in contact with the adapter and at least one sidewall extends from the top portion. At least a portion of the at least one sidewall is in contact with the substrate. A ball grid array is disposed on the second surface of the substrate, bumps of the ball grid array being in electrical connection with ones of the conductive traces.

Abstract: An integrated circuit package including a flexible circuit tape having a flexible polyimide tape laminated to a conductor layer, a plurality of blind holes extending through the flexible tape to the conductor layer and a plurality of through holes extending through the flexible tape and the conductor layer. A copper leadframe is fixed to the flexible circuit tape and electrically isolated from the conductor layer. The copper leadframe includes an etched down die attach pad and heat spreader portions. The die attach pad is etched down such that at least a portion of the die attach pad is reduced in thickness. The through holes in the flexible circuit tape extend through to the copper leadframe. A semiconductor die is mounted on the at least a portion of the die attach pad. Wire bonds extend from pads on the semiconductor die to the die attach pad and from other pads on the semiconductor die to the conductor layer, an encapsulating material encapsulates the semiconductor die and the wire bonds.