Abstract: A method of forming a semiconductor device includes surrounding a dummy gate disposed over a fin with a dielectric material; forming a gate trench in the dielectric material by removing the dummy gate and by removing upper portions of a first gate spacer disposed along sidewalls of the dummy gate, the gate trench comprising a lower trench between remaining lower portions of the first gate spacer and comprising an upper trench above the lower trench; forming a gate dielectric layer, a work function layer and a glue layer successively in the gate trench; removing the glue layer and the work function layer from the upper trench; filling the gate trench with a gate electrode material after the removing; and removing the gate electrode material from the upper trench, remaining portions of the gate electrode material forming a gate electrode.

Abstract: A thin film transistor includes a substrate, a semiconductor layer, a gate insulating layer, a gate, a source and a drain. The semiconductor layer is located above the substrate. The gate insulating layer is located above the semiconductor layer. The gate is located above the gate insulating layer and overlapping with the semiconductor layer. The gate includes a first portion, a second portion and a third portion. The first portion is extending along the surface of the gate insulating layer and directly in contact with the gate insulating layer. The second portion is separated from the gate insulating layer. Taking the surface of the gate insulating layer as a reference, the top surface of the second portion is higher than the top surface of the first portion. The third portion connects the first portion to the second portion. The source and the drain are electrically connected to the semiconductor layer.

Abstract: A semiconductor device includes a gate electrode over a channel region of a semiconductor fin, first spacers over the semiconductor fin, and second spacers over the semiconductor fin. A lower portion of the gate electrode is between the first spacers. An upper portion of the gate electrode is above the first spacers. The second spacers are adjacent the first spacers opposite the gate electrode. The upper portion of the gate electrode is between the second spacers.

Abstract: An apparatus for taking a flexible display panel off includes a roller, a linear motion member, a fastening apparatus and a first driving apparatus. The roller has a circumferential surface which allows a first portion of the flexible display panel to be wound thereon. The linear motion member has a carrying surface. A second portion of the flexible display panel is in contact with the carrying surface. The fastening apparatus is used to fasten the flexible display panel onto the carrying surface of the linear motion member. The first driving apparatus is used to drive the linear motion member to move linearly relative to the circumferential surface, so that the first portion departs from the circumferential surface and moves onto the carrying surface along with the second portion.

Abstract: An apparatus for taking a flexible display panel off includes a roller, a linear motion member, a fastening apparatus and a first driving apparatus. The roller has a circumferential surface which allows a first portion of the flexible display panel to be wound thereon. The linear motion member has a carrying surface. A second portion of the flexible display panel is in contact with the carrying surface. The fastening apparatus is used to fasten the flexible display panel onto the carrying surface of the linear motion member. The first driving apparatus is used to drive the linear motion member to move linearly relative to the circumferential surface, so that the first portion departs from the circumferential surface and moves onto the carrying surface along with the second portion.