Patents by Inventor Ming-Wei Hsueh

Ming-Wei Hsueh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11961944
    Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a semiconductor substrate, active devices and transparent conductive patterns. The active devices are formed on the semiconductor substrate. The transparent conductive patterns are formed over the active devices and electrically connected to the active devices. The transparent conductive patterns are made of a metal oxide material. The metal oxide material has a first crystalline phase with a prefer growth plane rich in oxygen vacancy, and has a second crystalline phase with a prefer growth plane poor in oxygen vacancy.
    Type: Grant
    Filed: January 31, 2023
    Date of Patent: April 16, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-En Yen, Ming-Da Cheng, Mirng-Ji Lii, Wen-Hsiung Lu, Cheng-Jen Lin, Chin-Wei Kang, Chang-Jung Hsueh
  • Patent number: 9960444
    Abstract: A semi-vanadium(V) redox flow battery (semi-VRFB) including a positive electrolyte tank, a negative electrolyte tank and a cell stack. The positive electrolyte tank is stored with a positive electrolyte of V ions and the negative electrolyte tank is stored with a negative electrolyte of iodine(I)-vitamin C. The cell stack comprises a positive electrode, a negative electrode, an insulating film, a positive electrode plate, and a negative electrode plate. The negative electrode is made of carbon (C) sandwiched with titanium dioxide(TiO2), and can further comprise a metal or an alloy. The insulating film is located between the positive electrode and the negative electrode. The positive and negative electrode plates are located in front of the positive and negative electrodes, respectively. The positive and negative electrolytes flow through the positive and negative electrode plates to charge/discharge power by the electrochemical reactions of V ions and I-vitamin C at the positive and negative electrodes.
    Type: Grant
    Filed: June 17, 2015
    Date of Patent: May 1, 2018
    Assignee: INSTITUTE OF NUCLEAR ENERGY RESEARCH, ATOMIC ENERGY COUNCIL, Executive Yuan, R.O.C.
    Inventors: Chin-Lung Hsieh, Shu-Ling Huang, Tz-Jiun Tsai, Ming-Wei Hsueh, Mei-Ling Chen
  • Publication number: 20160372776
    Abstract: A semi-vanadium (V) redox flow battery (semi-VRFB) includes a positive electrolyte tank, a negative electrolyte tank and a cell stack. The positive electrolyte tank is stored with a positive electrolyte of V ions; and the negative electrolyte tank is stored with an negative electrolyte of iodine (I)-vitamin C. The cell stack comprises a positive electrode, a negative electrode, an insulating film, a positive electrode plate and a negative electrode plate. The negative electrode is made of CarbonĀ© and titanium dioxide (TiO2), which can further comprises a metal or an alloy. The insulating film is located between the positive electrode and the negative electrode. The positive and negative electrode plates are located in front of the positive and negative electrodes, respectively. The positive and negative electrolytes flow through the positive and negative electrode plates to charge/discharge power by the electrochemical reactions of V ions and I-vitamin C at the positive and negative electrodes.
    Type: Application
    Filed: June 17, 2015
    Publication date: December 22, 2016
    Inventors: Chin-Lung Hsieh, Shu-Ling Huang, Tz-Jiun Tsai, Ming-Wei Hsueh, Mei-Ling Chen