Abstract: A helmet is provided that can include a cage defining a front end, a back end opposite the front end, a first lateral end and a second lateral end opposite the first lateral end. The cage can include multiple longitudinal beams that extend between the back end of the cage and the front end of the cage; and a transverse beam that extends between the first lateral end of the cage and the second lateral end of the cage. The transverse beam can be anchored to the multiple longitudinal beams. The helmet can include a body that fully encapsulates the multiple longitudinal beams of the cage and that partially encapsulates the transverse beam. The body can define multiple vents. Each vent can be situated between two adjacent longitudinal beams. The transverse beam can extend through one of the multiple vents.

Abstract: Porogen accumulation in a UV-cure chamber is reduced by removing outgassed porogen through a heated outlet while purge gas is flowed across a window through which a wafer is exposed to UV light. A purge ring having specific major and minor exhaust to inlet area ratios may be partially made of flame polished quartz to improve flow dynamics. The reduction in porogen accumulation allows more wafers to be processed between chamber cleans, thus improving throughput and cost.

Abstract: A substrate used for III-V-nitride growth and a manufacturing method thereof, the manufacturing method including the following steps: 1) providing a growth substrate, and forming on the surface of the growth substrate a buffer layer used for subsequent growth of a luminescent epitaxial structure; 2) forming a semiconductor dielectric layer on the surface of the buffer layer; 3) by a photolithography process, etching a plurality of semiconductor dielectric protrusions arranged at intervals on the semiconductor dielectric layer, and exposing the buffer layer between the semiconductor dielectric protrusions. This method ensures the crystal quality of the grown luminescent epitaxial structure and also raises the luminescent efficiency of a light-emitting diode. The process is simple, advantageous for reducing cost of manufacture, and suitable for use in industrial production.

Abstract: A purge ring for providing a gas to a wafer processing chamber includes an inlet ring wall defining a ring hole space. An outer perimeter of the inlet ring wall is elliptical. An outer perimeter of the ring hole space is circular. The inlet ring wall is a continuous structure surrounding the ring hole space. An inlet baffle formed within the inlet ring wall surrounds at least 180 degrees of the outer perimeter of the ring hole space. An inlet plenum arranged in a first end of the inlet ring wall provides the gas to the ring hole space through the inlet baffle. An exhaust channel is formed within the inlet ring wall in a second end of the inlet ring wall. An exhaust outlet hole arranged in the second end of the inlet ring wall exhausts the gas out of the ring hole space via the exhaust channel.

Abstract: Porogen accumulation in a UV-cure chamber is reduced by removing outgassed porogen through a heated outlet while purge gas is flowed across a window through which a wafer is exposed to UV light. A purge ring having specific major and minor exhaust to inlet area ratios may be partially made of flame polished quartz to improve flow dynamics. The reduction in porogen accumulation allows more wafers to be processed between chamber cleans, thus improving throughput and cost.

Abstract: The present invention discloses a method and an apparatus for fusing a plurality of depth images. The method includes: obtaining N depth images collected by N image collection units, where N?2; obtaining a first foreground pixel of an ith depth image of the N depth images, where i?1 and i?N; obtaining N?1 projected points that correspond to the first foreground pixel and that are in depth images respectively collected by N?1 image collection units; and when depth values of a foreground three-dimensional space point in respective coordinate systems of the N?1 image collection units are greater than or equal to depth values of the respective N?1 projected points corresponding to the first foreground pixel, obtaining a three-dimensional point cloud by means of fusion.

Abstract: Porogen accumulation in a UV-cure chamber is reduced by removing outgassed porogen through a heated outlet while purge gas is flowed across a window through which a wafer is exposed to UV light. A purge ring having specific major and minor exhaust to inlet area ratios may be partially made of flame polished quartz to improve flow dynamics. The reduction in porogen accumulation allows more wafers to be processed between chamber cleans, thus improving throughput and cost.

Abstract: A method and apparatus for processing an audio/video file. By determining an audio/video file to be processed and then determining loadable audio/video promotion information for the audio/video file according to at least one of attribute information about a target user and attribute information about the audio/video file, the disclosed embodiments can carry out a merge operation on the audio/video file and the audio/video promotion information.

Abstract: A substrate used for III-V-nitride growth and a manufacturing method thereof, the manufacturing method including the following steps: 1) providing a growth substrate, and forming on the surface of the growth substrate a buffer layer used for subsequent growth of a luminescent epitaxial structure; 2) forming a semiconductor dielectric layer on the surface of the buffer layer; 3) by a photolithography process, etching a plurality of semiconductor dielectric protrusions arranged at intervals on the semiconductor dielectric layer, and exposing the buffer layer between the semiconductor dielectric protrusions. This method ensures the crystal quality of the grown luminescent epitaxial structure and also raises the luminescent efficiency of a light-emitting diode. The process is simple, advantageous for reducing cost of manufacture, and suitable for use in industrial production.

Abstract: A substrate used for III-V-nitride growth and a manufacturing method thereof, the manufacturing method comprising the following steps: 1) providing a growth substrate, and forming on the surface of the growth substrate a buffer layer used for subsequent growth of a luminescent epitaxial structure; 2) forming a semiconductor dielectric layer on the surface of the buffer layer; 3) by means of a photolithography process, etching a plurality of semiconductor dielectric protrusions arranged at intervals on the semiconductor dielectric layer, and exposing the buffer layer between the semiconductor dielectric protrusions. This method ensures the crystal quality of the grown luminescent epitaxial structure and also raises the luminescent efficiency of a light-emitting diode. The process is simple, advantageous for reducing cost of manufacture, and suitable for use in industrial production.

Abstract: A purge ring for providing a gas to a wafer processing chamber includes an inlet ring wall defining a ring hole space. An outer perimeter of the inlet ring wall is elliptical. An outer perimeter of the ring hole space is circular. The inlet ring wall is a continuous structure surrounding the ring hole space. An inlet baffle formed within the inlet ring wall surrounds at least 180 degrees of the outer perimeter of the ring hole space. An inlet plenum arranged in a first end of the inlet ring wall provides the gas to the ring hole space through the inlet baffle. An exhaust channel is formed within the inlet ring wall in a second end of the inlet ring wall. An exhaust outlet hole arranged in the second end of the inlet ring wall exhausts the gas out of the ring hole space via the exhaust channel.

Abstract: A purge ring for providing a gas to a wafer processing chamber includes an inlet ring wall defining a ring hole space. An outer perimeter of the inlet ring wall is elliptical. An outer perimeter of the ring hole space is circular. The inlet ring wall is a continuous structure surrounding the ring hole space. An inlet baffle formed within the inlet ring wall surrounds at least 180 degrees of the outer perimeter of the ring hole space. An inlet plenum arranged in a first end of the inlet ring wall provides the gas to the ring hole space through the inlet baffle. An exhaust channel is formed within the inlet ring wall in a second end of the inlet ring wall. An exhaust outlet hole arranged in the second end of the inlet ring wall exhausts the gas out of the ring hole space via the exhaust channel.

Abstract: A method and apparatus for identifying a language used in a document based on a number of strokes per character is provided herein. Once identified, character recognition may take place based on the language identified. In one embodiment, a character recognition engine is utilized for character recognition, wherein the character recognition engine is specifically tailored to the identified language.

Abstract: A method and apparatus for processing an audio/video file. By determining an audio/video file to be processed and then determining loadable audio/video promotion information for the audio/video file according to at least one of attribute information about a target user and attribute information about the audio/video file, the disclosed embodiments can carry out a merge operation on the audio/video file and the audio/video promotion information.

Abstract: The present invention provides a method, apparatus, device and system for inserting an audio ad. The present invention determines, according to feature information of audio into which an audio advertisement is inserted, an insertion time point of the audio advertisement when playing the audio, and executes an operation associated with the insertion of the audio advertisement at the insertion time point on a user equipment. The present invention enables an audio advertisement to be inserted into audio at a suitable time point to reduce the incongruity of the audio ad, so as to enhance the user experience. Furthermore, the present invention may rapidly update the advertisement contents in real time, so that a vast amount of Internet ads can be delivered quickly, so as to better satisfy both the user experience and revenue requirements.

Abstract: Porogen accumulation in a UV-cure chamber is reduced by removing outgassed porogen through a heated outlet while purge gas is flowed across a window through which a wafer is exposed to UV light. A purge ring having specific major and minor exhaust to inlet area ratios may be partially made of flame polished quartz to improve flow dynamics. The reduction in porogen accumulation allows more wafers to be processed between chamber cleans, thus improving throughput and cost.

Abstract: A method and apparatus for identifying a language used in a document based on a number of strokes per character is provided herein. Once identified, character recognition may take place based on the language identified. In one embodiment, a character recognition engine is utilized for character recognition, wherein the character recognition engine is specifically tailored to the identified language.

Abstract: Porogen accumulation in a UV-cure chamber is reduced by removing outgassed porogen through a heated outlet while purge gas is flowed across a window through which a wafer is exposed to UV light. A purge ring having specific major and minor exhaust to inlet area ratios may be partially made of flame polished quartz to improve flow dynamics. The reduction in porogen accumulation allows more wafers to be processed between chamber cleans, thus improving throughput and cost.

Abstract: A method and apparatus for atomic layer deposition (ALD) is described. In one embodiment, an apparatus comprises a vacuum chamber body having a contiguous internal volume comprised of a first deposition region spaced-apart from a second deposition region, the chamber body having a feature operable to minimize intermixing of gases between the first and the second deposition regions, a first gas port formed in the chamber body and positioned to pulse gas preferentially to the first deposition region to enable a first deposition process to be performed in the first deposition region, and a second gas port formed in the chamber body and positioned to pulse gas preferentially to the second deposition region to enable a second deposition process to be performed in the second deposition region is provided.

Abstract: A method of forming a material on a substrate is disclosed. In one embodiment, the method includes forming a tantalum nitride layer on a substrate disposed in a plasma process chamber by sequentially exposing the substrate to a tantalum precursor and a nitrogen precursor, followed by reducing a nitrogen concentration of the tantalum nitride layer by exposing the substrate to a plasma annealing process. A metal-containing layer is subsequently deposited on the tantalum nitride layer.