Abstract: The present disclosure provides a memory device, a semiconductor device, and a method of operating a memory device. A memory device includes a memory cell, a bit line, a word line, a select transistor, a fuse element, and a heater. The bit line is connected to the memory cell. The word line is connected to the memory cell. The select transistor is disposed in the memory cell. A gate of the select transistor is connected to the word line. The fuse element is disposed in the memory cell. The fuse element is connected to the bit line and the select transistor. The heater is configured to heat the fuse element.

Abstract: A system includes: a high bandwidth memory (HBM) including a first sensing unit configured to generate one or more first environmental signals corresponding to a first transistor in a first memory cell, and a second sensing unit configured to generate one or more second environmental signals corresponding to a second transistor in a second memory cell; and a differentiated dynamic voltage and frequency scaling (DDVFS) device configured to perform the following (1) for a first set of the memory cells which includes the first memory cell, controlling temperature by adjusting one or more first transistor-temperature-affecting (TTA) parameters of the first set based on the one or more first environmental signals, and (2) for a second set of the memory cells which includes the second memory cell, controlling temperature by adjusting one or more second TTA parameters of the second set based on the one or more second environmental signals.

Abstract: The present disclosure provides a memory device, a semiconductor device, and a method of operating a memory device. A memory device includes a memory cell, a bit line, a word line, a select transistor, a fuse element, and a heater. The bit line is connected to the memory cell. The word line is connected to the memory cell. The select transistor is disposed in the memory cell. A gate of the select transistor is connected to the word line. The fuse element is disposed in the memory cell. The fuse element is connected to the bit line and the select transistor. The heater is configured to heat the fuse element.

Abstract: Various implementations described herein are directed to multi-stage system. The system may include a first stage having a current bias generator that generates a biasing current. The system may include a second stage that is coupled to the first stage, and the second stage may include a load that utilizes the biasing current generated by the current bias generator.

Abstract: Subject matter disclosed herein may relate to detecting wireless signals and/or signal packets and may relate more particularly to detecting wireless signals and/or signal packets at energy-harvesting devices.

Abstract: A system includes: a high bandwidth memory (HBM) including a first sensing unit configured to generate one or more first environmental signals corresponding to a first transistor in a first memory cell, and a second sensing unit configured to generate one or more second environmental signals corresponding to a second transistor in a second memory cell; and a differentiated dynamic voltage and frequency scaling (DDVFS) device configured to perform the following (1) for a first set of the memory cells which includes the first memory cell, controlling temperature by adjusting one or more first transistor-temperature-affecting (TTA) parameters of the first set based on the one or more first environmental signals, and (2) for a second set of the memory cells which includes the second memory cell, controlling temperature by adjusting one or more second TTA parameters of the second set based on the one or more second environmental signals.

Abstract: Subject matter disclosed herein may relate to detecting wireless signals and/or signal packets and may relate more particularly to detecting wireless signals and/or signal packets at energy-harvesting devices.

Abstract: Various implementations described herein refer to an integrated circuit having a first stage and a second stage. The first stage has a step-down converter coupled to an oscillator between a first voltage supply and a second voltage supply. The second stage is coupled to the first stage, and the second stage has a current bias generator coupled to a diode-connected transistor between the first voltage supply and the second voltage supply. The second stage provides an intermediate voltage to the first stage.

Abstract: Various implementations described herein refer to an integrated circuit having a first stage and a second stage. The first stage has a step-down converter coupled to an oscillator between a first voltage supply and a second voltage supply. The second stage is coupled to the first stage, and the second stage has a current bias generator coupled to a diode-connected transistor between the first voltage supply and the second voltage supply. The second stage provides an intermediate voltage to the first stage.

Abstract: Various implementations described herein are directed to multi-stage system. The system may include a first stage having a current bias generator that generates a biasing current. The system may include a second stage that is coupled to the first stage, and the second stage may include a load that utilizes the biasing current generated by the current bias generator.

Abstract: Various implementations described herein refer to an integrated circuit having a first stage and a second stage. The first stage has a step-down converter coupled to an oscillator between a first voltage supply and a second voltage supply. The second stage is coupled to the first stage, and the second stage has a current bias generator coupled to a diode-connected transistor between the first voltage supply and the second voltage supply. The second stage provides an intermediate voltage to the first stage.

Abstract: Various implementations described herein refer to a method for providing an integrated circuit with a real-time clock source. The method may include generating a real-time clock signal for the integrated circuit with the real-time clock source. The method may include selectively adjusting clock frequency of the real-time clock signal to save power in the integrated circuit.

Abstract: Various implementations described herein are directed to a device having a voltage regulator that uses a modulator to adjust an output voltage. The device may include a time-to-digital converter that measures a timing delay of a logic chain, compares the timing delay to a reference delay to determine a timing delay error, and provides the timing delay error to the modulator for adjusting the output voltage.

Abstract: Various implementations described herein are directed to a device having a voltage regulator that uses a modulator to adjust an output voltage. The device may include a time-to-digital converter that measures a timing delay of a logic chain, compares the timing delay to a reference delay to determine a timing delay error, and provides the timing delay error to the modulator for adjusting the output voltage.

Abstract: Various implementations described herein refer to an integrated circuit having a first stage and a second stage. The first stage has a step-down converter coupled to an oscillator between a first voltage supply and a second voltage supply. The second stage is coupled to the first stage, and the second stage has a current bias generator coupled to a diode-connected transistor between the first voltage supply and the second voltage supply. The second stage provides an intermediate voltage to the first stage.

Abstract: A single-inductor multiple-output (SIMO) power converter converts an input voltage into an output voltage and a biasing voltage. The SIMO power converter comprises an inductor and a primary power switch, and a control circuit. The inductor is configured for storing energy from the input voltage. The primary power switch has a control node and is connected between the inductor and the output voltage which powers an output load. The control circuit controls the primary power switch comprising an auxiliary power switch and a driver. The auxiliary power switch is connected between the inductor and the biasing voltage. The driver, powered by the biasing voltage, drives the control node. The biasing voltage determines a signal level at the control node. The primary power switch and the auxiliary power switch are controlled to distribute the energy stored in the inductor to the output voltage and the biasing voltage.

Abstract: A temperature sensor configured to generate a temperature-indicating signal with improved accuracy over a wide temperature range is disclosed. The temperature sensor includes a first oscillator configured to generate a first oscillating signal with a first frequency that varies with a sensed temperature and a reference parameter; a second oscillator configured to generate a second oscillating signal with a second frequency that varies with the reference parameter; and a time-to-digital converter (TDC) configured to generate a digital output indicative of the sensed temperature based on a ratio of the first frequency to the second frequency. Because the first and second frequencies depend on the reference parameter, and the temperature-indicating signal is a function of the ratio of the first and second frequencies, temperature-variation in the reference parameter cancels out in the temperature-indicating signal.

Abstract: A temperature sensor configured to generate a temperature-indicating signal with improved accuracy over a wide temperature range is disclosed. The temperature sensor includes a first oscillator configured to generate a first oscillating signal with a first frequency that varies with a sensed temperature and a reference parameter; a second oscillator configured to generate a second oscillating signal with a second frequency that varies with the reference parameter; and a time-to-digital converter (TDC) configured to generate a digital output indicative of the sensed temperature based on a ratio of the first frequency to the second frequency. Because the first and second frequencies depend on the reference parameter, and the temperature-indicating signal is a function of the ratio of the first and second frequencies, temperature-variation in the reference parameter cancels out in the temperature-indicating signal.

Abstract: A single-inductor multiple-output (SIMO) power converter converts an input voltage into an output voltage and a biasing voltage. The SIMO power converter comprises an inductor and a primary power switch, and a control circuit. The inductor is configured for storing energy from the input voltage. The primary power switch has a control node and is connected between the inductor and the output voltage which powers an output load. The control circuit controls the primary power switch comprising an auxiliary power switch and a driver. The auxiliary power switch is connected between the inductor and the biasing voltage. The driver, powered by the biasing voltage, drives the control node. The biasing voltage determines a signal level at the control node. The primary power switch and the auxiliary power switch are controlled to distribute the energy stored in the inductor to the output voltage and the biasing voltage.

Abstract: An energy control method for a inductive conversion device comprising: determination of individual error of multiple output voltages; determination of peak current based on the errors, determination of total energy through the peak current and charging to at least one inductor according to the peak current, whereas the inductor will store the total energy.