Abstract: A method of forming a semiconductor device includes: forming a fin protruding above a substrate; forming isolation regions on opposing sides of the fin; forming a dummy gate electrode over the fin; removing lower portions of the dummy gate electrode proximate to the isolation regions, where after removing the lower portions, there is a gap between the isolation regions and a lower surface of the dummy gate electrode facing the isolation regions; filling the gap with a gate fill material; after filling the gap, forming gate spacers along sidewalls of the dummy gate electrode and along sidewalls of the gate fill material; and replacing the dummy gate electrode and the gate fill material with a metal

Abstract: A semiconductor device includes a substrate. The semiconductor device includes a fin that is formed over the substrate and extends along a first direction. The semiconductor device includes a gate structure that straddles the fin and extends along a second direction perpendicular to the first direction. The semiconductor device includes a first source/drain structure coupled to a first end of the fin along the first direction. The gate structure includes a first portion protruding toward the first source/drain structure along the first direction. A tip edge of the first protruded portion is vertically above a bottom surface of the gate structure.

Abstract: A semiconductor device includes a plurality of channel layers vertically separated from one another. The semiconductor device also includes an active gate structure comprising a lower portion and an upper portion. The lower portion wraps around each of the plurality of channel layers. The semiconductor device further includes a gate spacer extending along a sidewall of the upper portion of the active gate structure. The gate spacer has a bottom surface. Moreover, a dummy gate dielectric layer is disposed between the gate spacer and a topmost channel layer of plurality of channel layers. The dummy gate dielectric layer is in contact with a top surface of the topmost channel layer, the bottom surface of the gate spacer, and the sidewall of the gate structure.

Abstract: Disclosed herein is a method of producing acellular cartilage grafts. The method includes steps of, subjecting a cartilage matrix derived from an animal to alkaline, disinfection and decelluarization treatments. The thus produced cartilage graft is devoid of any cellular matters, while maintaining the porosity and integrity of collagen fibers therein, thus is suitable as a xenograft for host cells to grown thereon. Also disclosed herein is a method for treating osteochondral disease of a subject, in which the present acellular cartilage graft is applied to a lesion site of the subject.

Abstract: Disclosed herein is a method of producing acellular cartilage grafts. The method includes steps of, subjecting a cartilage matrix derived from an animal to alkaline, disinfection and decelluarization treatments. The thus produced cartilage graft is devoid of any cellular matters, while maintaining the porosity and integrity of collagen fibers therein, thus is suitable as a xenograft for host cells to grown thereon. Also disclosed herein is a method for treating osteochondral disease of a subject, in which the present acellular cartilage graft is applied to a lesion site of the subject.