Patents by Inventor Ming Yean

Ming Yean has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Low foam media cleaning detergent with nonionic surfactants
    Patent number: 9040473
    Abstract: A detergent for cleaning media is provided. The detergent comprises deionized water, between about 1% and about 5% by weight of a nonionic surfactant having an hydrophile/lipophile balance (HLB) value between about 10 and about 20, and an ethoxylation level between about 5 and about 20, between about 1% and about 5% by weight of a dispersing agent, between about 3% and about 10% by weight of a chelating agent comprising phosphonic acid, and between about 2% and about 6% by weight of an inorganic salt.
    Type: Grant
    Filed: July 21, 2010
    Date of Patent: May 26, 2015
    Assignee: WD Media, LLC
    Inventors: EE Boon Quah, Kwai Cheang Wong, Ming Yean Liew, Chung Lieh Chua, Yasuhiro Suzuki
  • DRAM with dopant stop layer and method of fabricating the same
    Patent number: 8466504
    Abstract: A DRAM with dopant stop layer includes a substrate, a trench-type transistor and a capacitor electrically connected to the trench-type transistor. The trench-type transistor includes a gate structure embedded in the substrate. A source doping region and a drain doping region are disposed in the substrate at two sides of the gate structure. A boron doping region is disposed under the source doping region. A dopant stop layer is disposed within the boron doping region or below the boron doping region. The dopant stop layer includes a dopant selected from the group consisting of C, Si, Ge, Sn, Cl, F and Br.
    Type: Grant
    Filed: September 14, 2011
    Date of Patent: June 18, 2013
    Assignee: Inotera Memories, Inc.
    Inventors: Chia-Ming Yang, Yao-Hsien Wang, Chen-Kang Wei, Chien-Chi Lee, Ming Yean, Yi-Wei Chuang, Hsiao-Lung Chiang, Hung-Chang Liao, Chung-Yuan Lee, Ming-Chi Chao
  • DRAM WITH DOPANT STOP LAYER AND METHOD OF FABRICATING THE SAME
    Publication number: 20120280297
    Abstract: A DRAM with dopant stop layer includes a substrate, a trench-type transistor and a capacitor electrically connected to the trench-type transistor. The trench-type transistor includes a gate structure embedded in the substrate. A source doping region and a drain doping region are disposed in the substrate at two sides of the gate structure. A boron doping region is disposed under the source doping region. A dopant stop layer is disposed within the boron doping region or below the boron doping region. The dopant stop layer includes a dopant selected from the group consisting of C, Si, Ge, Sn, Cl, F and Br.
    Type: Application
    Filed: September 14, 2011
    Publication date: November 8, 2012
    Inventors: Chia-Ming Yang, Yao-Hsien Wang, Chen-Kang Wei, Chien-Chi Lee, Ming Yean, Yi-Wei Chuang, Hsiao-Lung Chiang, Hung-Chang Liao, Chung-Yuan Lee, Ming-Chi Chao