Abstract: In some embodiments, the present disclosure relates an integrated chip including a substrate. A conductive interconnect feature is arranged over the substrate. The conductive interconnect feature has a base feature portion with a base feature width and an upper feature portion with an upper feature width. The upper feature width is narrower than the base feature width such that the conductive interconnect feature has tapered outer feature sidewalls. An interconnect via is arranged over the conductive interconnect feature. The interconnect via has a base via portion with a base via width and an upper via portion with an upper via width. The upper via width is wider than the base via width such that the interconnect via has tapered outer via sidewalls.

Abstract: The disclosure provides a method of active immunotherapy for a cancer patient, comprising administering vaccines against Globo series antigens (i.e., Globo H, SSEA-3 and SSEA-4). Specifically, the method comprises administering Globo H-CRM197 (OBI-833/821) in patients with cancer. The disclosure also provides a method of selecting a cancer patient who is suitable as treatment candidate for immunotherapy. Exemplary immune response can be characterized by reduction of the severity of disease, including but not limited to, prevention of disease, delay in onset of disease, decreased severity of symptoms, decreased morbidity and delayed mortality.

Abstract: The present disclosure relates to a semiconductor device package. The semiconductor device package includes a substrate, a support structure, an electronic component and an adhesive. The support structure is disposed on the substrate. The electronic component is disposed on the support structure. The adhesive is disposed between the substrate and the electronic component and covers the support structure. A hardness of the support structure is less than a hardness of the electronic component.

Abstract: A block management method, a memory control circuit unit and a memory storage apparatus for managing a plurality of physical blocks are provided. The method includes writing test data to a first physical block among the plurality of physical blocks, reading the test data from the first physical block among the plurality of physical blocks to obtain a plurality of parameters corresponding to the first physical block; grouping the first physical block into a first block group or a second block group according to the plurality of parameters corresponding to the first physical block and a rule between the plurality of parameters and grouping of the plurality of physical blocks; establishing first and second block mapping tables; and mapping logical addresses of the first and second block mapping tables to the plurality of physical blocks belonging to the first and second block groups.

Abstract: The present disclosure relates to a semiconductor device package. The semiconductor device package includes a substrate, a support structure, an electronic component and an adhesive. The support structure is disposed on the substrate. The electronic component is disposed on the support structure. The adhesive is disposed between the substrate and the electronic component and covers the support structure. A hardness of the support structure is less than a hardness of the electronic component.

Abstract: The present disclosure relates to a semiconductor device package. The semiconductor device package includes a substrate, a support structure, an electronic component and an adhesive. The support structure is disposed on the substrate. The electronic component is disposed on the support structure. The adhesive is disposed between the substrate and the electronic component and covers the support structure. A hardness of the support structure is less than a hardness of the electronic component.

Abstract: A memory management method, a memory control circuit unit and a memory storage device are provided. The method includes recording use information according to each physical erasing unit of a rewritable non-volatile memory module. The method also includes configuring a plurality of super physical units. An address offset value corresponding to a first unavailable physical programming unit of a first physical erasing unit in a first super physical unit is the same as an address offset value corresponding to a first available physical programming unit of a second physical erasing unit in the first super physical unit.

Abstract: A block management method, a memory control circuit unit and a memory storage apparatus for managing a plurality of physical blocks are provided. The method includes reading user data from a first physical block among physical blocks to obtain a plurality of parameters; inputting the parameters corresponding to the first physical block into a machine learning based block recognizer to group the first physical block into a first block group or a second block group according to an output result of the machine learning based block recognizer; establishing a first and second block mapping tables; mapping logical addresses of the first and second block mapping tables to the physical blocks belonging to the first and second block groups. The parameters may comprise at least one of a read busy time parameter, an error bit position parameter and a storage retention parameter. A machine learning operation may be performed using first and second test physical blocks, and corresponding parameters, as training data.

Abstract: The present disclosure relates to a semiconductor device package. The semiconductor device package includes a substrate, a support structure, an electronic component and an adhesive. The support structure is disposed on the substrate. The electronic component is disposed on the support structure. The adhesive is disposed between the substrate and the electronic component and covers the support structure. A hardness of the support structure is less than a hardness of the electronic component.

Abstract: A memory management method, a memory control circuit unit and a memory storage device are provided. The method includes recording use information according to each physical erasing unit of a rewritable non-volatile memory module. The method also includes configuring a plurality of super physical units. An address offset value corresponding to a first unavailable physical programming unit of a first physical erasing unit in a first super physical unit is the same as an address offset value corresponding to a first available physical programming unit of a second physical erasing unit in the first super physical unit.