Patents by Inventor Ming-Yen WENG
Ming-Yen WENG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240145421Abstract: Provided are a passivation layer for forming a semiconductor bonding structure, a sputtering target making the same, a semiconductor bonding structure and a semiconductor bonding process. The passivation layer is formed on a bonding substrate by sputtering the sputtering target; the passivation layer and the sputtering target comprise a first metal, a second metal or a combination thereof. The bonding substrate comprises a third metal. Based on a total atom number of the surface of the passivation layer, O content of the surface of the passivation layer is less than 30 at %; the third metal content of the surface of the passivation layer is less than or equal to 10 at %. The passivation layer has a polycrystalline structure. The semiconductor bonding structure sequentially comprises a first bonding substrate, a bonding layer and a second bonding substrate: the bonding layer is mainly formed by the passivation layer and the third metal.Type: ApplicationFiled: October 27, 2023Publication date: May 2, 2024Inventors: Kuan-Neng CHEN, Zhong-Jie HONG, Chih-I CHO, Ming-Wei WENG, Chih-Han CHEN, Chiao-Yen WANG, Ying-Chan HUNG, Hong-Yi WU, CHENG-YEN HSIEH
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Publication number: 20240126003Abstract: A light source module and a display device are provided. The light source module includes a light source, a light guide plate, and an optical film set including multiple first optical microstructures having a first surface, multiple second optical microstructures having a second surface, and multiple third optical microstructures having a third surface. Each of the multiple first optical microstructures has a first vertex angle, each of the multiple second optical microstructures has a second vertex angle, and each of the multiple third optical microstructures has a third vertex angle. The third vertex angle is less than the first vertex angle, and the first vertex angle is less than or equal to the second vertex angle. By configuring the aforementioned optical microstructures, the light source module of the disclosure may greatly improve the collimation of light and has favorable luminance.Type: ApplicationFiled: October 16, 2023Publication date: April 18, 2024Applicant: Nano Precision Taiwan LimitedInventors: Hsin-Wei Chen, Wen-Yen Chiu, Chao-Hung Weng, Ming-Dah Liu
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Patent number: 11901618Abstract: An electronic device is provided. The electronic device includes a first substrate, a multilayer structure, and a passivation layer. The multilayer structure is disposed on the first substrate. The multilayer structure includes a first conductive layer and a second conductive layer disposed on the first conductive layer. The passivation layer is disposed on the second conductive layer. In addition, a thermal expansion coefficient of the second conductive layer is between a thermal expansion coefficient of the first conductive layer and a thermal expansion coefficient of the passivation layer.Type: GrantFiled: September 6, 2022Date of Patent: February 13, 2024Assignee: INNOLUX CORPORATIONInventors: Chia-Ping Tseng, Ker-Yih Kao, Chia-Chi Ho, Ming-Yen Weng, Hung-I Tseng, Shu-Ling Wu, Huei-Ying Chen
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Publication number: 20230006342Abstract: An electronic device is provided. The electronic device includes a first substrate, a multilayer structure, and a passivation layer. The multilayer structure is disposed on the first substrate. The multilayer structure includes a first conductive layer and a second conductive layer disposed on the first conductive layer. The passivation layer is disposed on the second conductive layer. In addition, a thermal expansion coefficient of the second conductive layer is between a thermal expansion coefficient of the first conductive layer and a thermal expansion coefficient of the passivation layer.Type: ApplicationFiled: September 6, 2022Publication date: January 5, 2023Inventors: Chia-Ping TSENG, Ker-Yih KAO, Chia-Chi HO, Ming-Yen WENG, Hung-I TSENG, Shu-Ling WU, Huei-Ying CHEN
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Patent number: 11469491Abstract: An antenna device is provided. The antenna device includes a first substrate, a multilayer electrode, a second substrate, and a liquid-crystal layer. The multilayer electrode is disposed on the first substrate, and the multilayer electrode includes a first conductive layer, a second conductive layer, and a third conductive layer. The second conductive layer is disposed on the first conductive layer. The third conductive layer is disposed on the second conductive layer. The liquid-crystal layer is disposed between the first substrate and the second substrate. In addition, the third conductive layer includes a first portion that extends beyond the second conductive layer.Type: GrantFiled: January 2, 2020Date of Patent: October 11, 2022Assignee: INNOLUX CORPORATIONInventors: Chia-Ping Tseng, Ker-Yih Kao, Chia-Chi Ho, Ming-Yen Weng, Hung-I Tseng, Shu-Ling Wu, Huei-Ying Chen
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Patent number: 11145600Abstract: An electronic device is provided. The electronic device includes a first substrate. The electronic device also includes a multilayer electrode disposed on the first substrate. The multilayer electrode includes a first conductive layer, a second conductive layer disposed on the first conductive layer, and a third conductive layer disposed on the second conductive layer. The electronic device further includes a second substrate facing the first substrate. In addition, the electronic device includes a working medium disposed between the first substrate and the second substrate. The chemical electromotive force of the second conductive layer is between that of the first conductive layer and the third conductive layer.Type: GrantFiled: November 4, 2019Date of Patent: October 12, 2021Assignee: INNOLUX CORPORATIONInventors: Chia-Chi Ho, Ming-Yen Weng, I-Yin Li
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Patent number: 11062979Abstract: A high-frequency device manufacturing method is provided. The method includes providing a substrate; forming a conductive material on the substrate; standing the substrate and the conductive material for a first time duration; forming a conductive layer by sequentially repeating the steps of forming the conductive material and standing at least once; and patterning the conductive layer. The thickness of the conductive layer is in a range from 0.9 ?m to 10 ?m. A high-frequency device is also provided.Type: GrantFiled: June 3, 2020Date of Patent: July 13, 2021Assignee: INNOLUX CORPORATIONInventors: Ming-Yen Weng, Ker-Yih Kao, Chia-Chi Ho, Tsutomu Shinozaki, Cheng-Chi Wang, I-Yin Li
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Publication number: 20200294891Abstract: A high-frequency device manufacturing method is provided. The method includes providing a substrate; forming a conductive material on the substrate; standing the substrate and the conductive material for a first time duration; forming a conductive layer by sequentially repeating the steps of forming the conductive material and standing at least once; and patterning the conductive layer. The thickness of the conductive layer is in a range from 0.9 ?m to 10 ?m. A high-frequency device is also provided.Type: ApplicationFiled: June 3, 2020Publication date: September 17, 2020Inventors: Ming-Yen WENG, Ker-Yih KAO, Chia-Chi HO, Tsutomu SHINOZAKI, Cheng-Chi WANG, I-Yin LI
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Publication number: 20200251812Abstract: An antenna device is provided. The antenna device includes a first substrate, a multilayer electrode, a second substrate, and a liquid-crystal layer. The multilayer electrode is disposed on the first substrate, and the multilayer electrode includes a first conductive layer, a second conductive layer, and a third conductive layer. The second conductive layer is disposed on the first conductive layer. The third conductive layer is disposed on the second conductive layer. The liquid-crystal layer is disposed between the first substrate and the second substrate. In addition, the third conductive layer includes a first portion that extends beyond the second conductive layer.Type: ApplicationFiled: January 2, 2020Publication date: August 6, 2020Inventors: Chia-Ping TSENG, Ker-Yih KAO, Chia-Chi HO, Ming-Yen WENG, Hung-I TSENG, Shu-Ling WU, Huei-Ying CHEN
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Patent number: 10707152Abstract: A high-frequency device manufacturing method is provided. The method includes providing a substrate; forming a conductive material on the substrate; standing the substrate and the conductive material for a first time duration; forming a conductive layer by sequentially repeating the steps of forming the conductive material and standing at least once; and patterning the conductive layer. The thickness of the conductive layer is in a range from 0.9 ?m to 10 ?m. A high-frequency device is also provided.Type: GrantFiled: December 18, 2017Date of Patent: July 7, 2020Assignee: INNOLUX CORPORATIONInventors: Ming-Yen Weng, Ker-Yih Kao, Chia-Chi Ho, Tsutomu Shinozaki, Cheng-Chi Wang, I-Yin Li
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Publication number: 20200161249Abstract: An electronic device is provided. The electronic device includes a first substrate. The electronic device also includes a multilayer electrode disposed on the first substrate. The multilayer electrode includes a first conductive layer, a second conductive layer disposed on the first conductive layer, and a third conductive layer disposed on the second conductive layer. The electronic device further includes a second substrate facing the first substrate. In addition, the electronic device includes a working medium disposed between the first substrate and the second substrate. The chemical electromotive force of the second conductive layer is between that of the first conductive layer and the third conductive layer.Type: ApplicationFiled: November 4, 2019Publication date: May 21, 2020Inventors: Chia-Chi HO, Ming-Yen WENG, I-Yin LI
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Patent number: 10461412Abstract: A microwave modulation device includes a first radiator, a second radiator and a modulation structure. The first radiator includes a substrate; a metal layer disposed on the substrate; a protective layer disposed on at least a portion of the metal layer and including a through hole overlapping with at least a portion of the metal layer; and an etch stop layer disposed between the metal layer and the protective layer. The second radiator disposed corresponding to the first radiator. The modulation structure is disposed between the first radiator and the second radiator.Type: GrantFiled: February 27, 2018Date of Patent: October 29, 2019Assignee: INNOLUX CORPORATIONInventors: I-Yin Li, Yi-Hung Lin, Chia-Chi Ho, Li-Wei Sung, Ming-Yen Weng, Hung-I Tseng, Kuo-Chun Lo, Charlene Su, Ker-Yih Kao
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Publication number: 20180375202Abstract: A microwave modulation device includes a first radiator, a second radiator and a modulation structure. The first radiator includes a substrate; a metal layer disposed on the substrate; a protective layer disposed on at least a portion of the metal layer and including a through hole overlapping with at least a portion of the metal layer; and an etch stop layer disposed between the metal layer and the protective layer. The second radiator disposed corresponding to the first radiator. The modulation structure is disposed between the first radiator and the second radiator.Type: ApplicationFiled: February 27, 2018Publication date: December 27, 2018Inventors: I-Yin LI, Yi-Hung LIN, Chia-Chi HO, Li-Wei SUNG, Ming-Yen WENG, Hung-I TSENG, Kuo-Chun LO, Charlene SU, Ker-Yih KAO
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Publication number: 20180204785Abstract: A high-frequency device manufacturing method is provided. The method includes providing a substrate; forming a conductive material on the substrate; standing the substrate and the conductive material for a first time duration; forming a conductive layer by sequentially repeating the steps of forming the conductive material and standing at least once; and patterning the conductive layer. The thickness of the conductive layer is in a range from 0.9 ?m to 10 ?m. A high-frequency device is also provided.Type: ApplicationFiled: December 18, 2017Publication date: July 19, 2018Inventors: Ming-Yen WENG, Ker-Yih KAO, Chia-Chi HO, Tsutomu SHINOZAKI, Cheng-Chi WANG, I-Yin LI