Abstract: A method of advanced process control (APC) for semiconductor fabrication is provided. The method includes providing a present wafer to be processed by a semiconductor processing tool, providing first data of previous wafers that have been processed by the semiconductor processing tool, decoupling noise from the first data to generate second data, evaluating an APC performance based on proximity of the second data to a target data, determining a control parameter based on the APC performance, and controlling the semiconductor processing tool with the control parameter to process the present wafer.

Abstract: A method of advanced process control (APC) for semiconductor fabrication is provided. The method includes providing a present wafer to be processed by a semiconductor processing tool, providing first data of previous wafers that have been processed by the semiconductor processing tool, decoupling noise from the first data to generate second data, evaluating an APC performance based on proximity of the second data to a target data, determining a control parameter based on the APC performance, and controlling the semiconductor processing tool with the control parameter to process the present wafer.

Abstract: A method and apparatus for rinsing and drying a substrate (100) of a semiconductor wafer (102), has a first nozzle (110) dispensing rinsing fluid against the substrate (100); and a second nozzle (114) dispensing dry gas under pressure against the substrate (100) during a drying cycle to dry the substrate (100) completely. The second nozzle (114) can point to the substrate (100) while the substrate (100) spins. The nozzles (110) and (114) can be positioned by a robot arm (112).

Abstract: A developer dispensing apparatus for dispensing developer solution onto a semiconductor wafer substrate which has a vertically-adjustable knife ring. The knife ring is vertically actuated in the apparatus by pressurized air or fluid. In an application, the gap distance between the upper edge of the knife ring and the backside of the wafer is initially adjusted to a minimum value as the developer solution is dispensed onto the wafer, by adjusting the knife ring to the uppermost position in the apparatus.

Abstract: A liquid dispensing nozzle beneficial in varying or controlling the quantity of a developing liquid dispensed onto various regions of a semiconductor wafer substrate during the photolithography step of semiconductor fabrication is disclosed. The liquid dispensing nozzle includes a nozzle housing which includes a bottom dispensing opening. A shutter plate in the nozzle housing is engaged by a shutter motor which displaces the shutter plate in the nozzle head and varies the position of the shutter plate with respect to the dispensing opening. The shutter plate opening narrows as the developing liquid is dispensed onto the edge of the substrate to prevent excessive application of the liquid onto those regions. The shutter plate widens the opening as the developing liquid is dispensed onto the central region of the substrate.

Abstract: A method for etching a silicon layer within a microelectronics fabrication. There is first provided a substrate employed within a microelectronics fabrication. There is then formed over the substrate a blanket silicon layer. There is then formed upon the blanket silicon layer a blanket silicon containing hard mask layer, where the blanket silicon containing hard mask layer is formed from a silicon containing material chosen from the group of silicon containing materials consisting of silicon oxide materials, silicon nitride materials, silicon oxynitride materials and composites of silicon oxide materials, silicon nitride materials and silicon oxynitride materials. There is then formed upon the blanket silicon containing hard mask layer a patterned photoresist layer. There is then etched through a first plasma etch method the blanket silicon containing hard mask layer to form a patterned silicon containing hard mask layer while employing the patterned photoresist layer as a first etch mask layer.

Abstract: A method is provided for the removal of the surface layer of the residual photoresist mask pattern used for metal subtractive etching which uses the same reactor equipment but employs reactive fluorine-containing gases to form volatile compounds with the surface layer, so that subsequently a conventional oxygen plasma stripping process can be used for complete resist residue removal without requiring excessive temperature exposure of the integrated circuit devices.