Abstract: A single memory cell has the functions of a storage element and a selector. The memory cell includes a P-type layer, a tunneling structure and an N-type layer. The tunneling structure is formed on the P-type layer. The N-type layer is formed on the tunneling structure. The tunneling structure is a stack structure including a first material layer, a second material layer and a third material layer. By adjusting a bias voltage that is applied to the P-type layer and the N-type layer, the tunneling structure is controlled to be in the amorphous state or the crystalline state. Consequently, the memory cell has the memorizing and storing functions. The memory cell has the P-type layer, the tunneling structure and the N-type layer. By adjusting the bias voltage, the function of the selector is achieved.

Abstract: A white LED includes a P-type layer, a tunneling structure, an N-type layer, an N-type electrode, and a P-type electrode. The tunneling structure is in contact with the P-type layer. The tunneling structure is a stack structure comprising a first barrier layer, a first active layer and a second barrier layer. At least one of the first barrier layer, the first active layer and the second barrier layer is a first metal nitride oxide layer. The N-type layer is in contact with the tunneling structure. The N-type electrode is in contact with the N-type layer. The P-type electrode is in contact with the P-type layer.