Abstract: A ferroelectric memory device and a semiconductor die are provided. The ferroelectric memory device includes a gate electrode; a channel layer, overlapped with the gate electrode; source/drain contacts, in contact with separate ends of the channel layer; a ferroelectric layer, lying between the gate electrode and the channel layer; and a first insertion layer, extending in between the ferroelectric layer and the channel layer, and comprising a metal carbonitride or a metal nitride.

Abstract: A phase change memory is provided. The method includes forming contact plugs in a first dielectric layer. A second dielectric layer is formed overlying the first dielectric layer and a trench formed therein exposing portions of the contact plugs. A metal layer is formed over surfaces of the trench. One or more heaters are formed from the metal layer such that each heater is formed along one or more sidewalls of the trench, wherein the portion of the heater along the sidewalls does not include a corner region of adjacent sidewalls. The trench is filled with a third dielectric layer, and a fourth dielectric layer is formed over the third dielectric layer. Trenches are formed in the fourth dielectric layer and filled with a phase change material. An electrode is formed over the phase change material.

Abstract: A common mode filter comprises an insulating substrate, a lower coil leading layer, a coil main body multilayer, and an upper coil leading layer. The upper coil leading layer comprises at least one upper lead, at least one upper terminal, and at least one upper contact, and the lower coil leading layer comprises at least one lower lead, at least one lower terminal, and at least one lower contact. The two ends of the upper lead are respectively connected to the upper terminal and the upper contact, and the upper lead surrounds the upper contact. The two ends of the lower lead are respectively connected to the lower terminal and the lower contact, and the lower lead surrounds the lower contact. The upper coil leading layer and the lower coil leading layer sandwich the coil main body multi-layer, and the lower coil leading layer is disposed on the insulating substrate.

Abstract: A thin film type common mode noise filter and its fabrication method are disclosed. There are several electric insulation layers, coil lead layers and main coil layers are formed on an insulation substrate by means of processes of Lithography, Physical Vapor Deposition, etching or other chemical process. After that the structure is covered with an electric insulation gluing layer and a magnetic material layer so as to form a thin film type common mode noise filter with a low production cost but an improved filtering characteristic of the common mode noise.

Abstract: A phase change memory is provided. The method includes forming contact plugs in a first dielectric layer. A second dielectric layer is formed overlying the first dielectric layer and a trench formed therein exposing portions of the contact plugs. A metal layer is formed over surfaces of the trench. One or more heaters are formed from the metal layer such that each heater is formed along one or more sidewalls of the trench, wherein the portion of the heater along the sidewalls does not include a corner region of adjacent sidewalls. The trench is filled with a third dielectric layer, and a fourth dielectric layer is formed over the third dielectric layer. Trenches are formed in the fourth dielectric layer and filled with a phase change material. An electrode is formed over the phase change material.

Abstract: A phase change memory is provided. The method includes forming contact plugs in a first dielectric layer. A second dielectric layer is formed overlying the first dielectric layer and a trench formed therein exposing portions of the contact plugs. A metal layer is formed over surfaces of the trench. One or more heaters are formed from the metal layer such that each heater is formed along one or more sidewalls and a portion of the bottom of the trench, wherein the portion of the heater along the sidewalls does not include a corner region of adjacent sidewalls. The trench is filled with a third dielectric layer, and a fourth dielectric layer is formed over the third dielectric layer. Trenches are formed in the fourth dielectric layer and filled with a phase change material. An electrode is formed over the phase change material.

Abstract: A phase change memory is provided. The method includes forming contact plugs in a first dielectric layer. A second dielectric layer is formed overlying the first dielectric layer and a trench formed therein exposing portions of the contact plugs. A metal layer is formed over surfaces of the trench. One or more heaters are formed from the metal layer such that each heater is formed along one or more sidewalls and a portion of the bottom of the trench, wherein the portion of the heater along the sidewalls does not include a corner region of adjacent sidewalls. The trench is filled with a third dielectric layer, and a fourth dielectric layer is formed over the third dielectric layer. Trenches are formed in the fourth dielectric layer and filled with a phase change material. An electrode is formed over the phase change material.