Abstract: A method of preparing polylactic acid (PLA) microsphere and polylactic-co-glycolic acid (PLGA) microsphere is provided, including the following steps. A first solution is provided, including polylactic acid or polylactic-co-glycolic acid and an organic solvent. A second solution is provided, including polyvinyl alcohol, sodium carboxymethyl cellulose and an aqueous solution. The first solution is added to the second solution and, at the same time, the second solution is agitated until polylactic acid is solidified to form a plurality of polylactic acid microspheres, or until polylactic-co-glycolic acid is solidified to form a plurality of polylactic-co-glycolic acid microspheres. The polylactic acid microspheres or polylactic-co-glycolic acid microspheres are collected.

Abstract: A data-processing device is provided. The data-processing device includes: a flash memory, a computation unit, and a flash-memory controller. The flash-memory controller is electrically connected to the computation unit, and configured to control access to the flash memory. The flash-memory controller allocates a first execute-only memory (XOM) setting and a second XOM setting in a first memory bank and a second memory bank of the flash memory, respectively. The flash-memory controller allocates one or more XOM spaces in the flash memory according to the first XOM setting or the second XOM setting.

Abstract: An audio synchronization processing method is provided. The method includes the following steps: receiving an input request signal; in response to receiving the input request signal, starting performing a counting operation according to a basic clock signal; outputting an output request signal according to a sampling-clock signal; in response to outputting the output request signal, stopping performing the counting operation to obtain a counting value; determining whether synchronization has been achieved based on the counting value; and in response to determining that the synchronization has not been reached, adjusting a frequency of the sampling-clock signal according to the counting value.

Abstract: An audio synchronization processing method is provided. The method includes the following steps: receiving an input request signal; in response to receiving the input request signal, starting performing a counting operation according to a basic clock signal; outputting an output request signal according to a sampling-clock signal; in response to outputting the output request signal, stopping performing the counting operation to obtain a counting value; determining whether synchronization has been achieved based on the counting value; and in response to determining that the synchronization has not been reached, adjusting a frequency of the sampling-clock signal according to the counting value.

Abstract: A data-processing device is provided. The data-processing device includes: a flash memory, a computation unit, and a flash-memory controller. The flash-memory controller is electrically connected to the computation unit, and configured to control access to the flash memory. The flash-memory controller allocates a first execute-only memory (XOM) setting and a second XOM setting in a first memory bank and a second memory bank of the flash memory, respectively. The flash-memory controller allocates one or more XOM spaces in the flash memory according to the first XOM setting or the second XOM setting.

Abstract: A pulse width modulation signal generation circuit and a pulse width modulation signal generation method are provided. A clock generator is configured for generating a clock signal including a plurality of pulses. The counting unit is coupled to the clock generator, and configured for storing a period parameter and outputting a counting value by counting the pulses of the clock signal based on the period parameter and a bidirectional counting mode. The comparing unit is coupled to the counting unit and is configured for comparing the counting value and a comparing threshold to output a level control signal. The signal generating unit is coupled to the comparing unit and configured for generating a pulse width modulation signal according to the level control signal. When the period parameter is odd, the counting value outputted by the counting unit is equal to a middle value in the two continuous clock cycles.

Abstract: A pulse width modulation signal generation circuit and a pulse width modulation signal generation method are provided. A clock generator is configured for generating a clock signal including a plurality of pulses. The counting unit is coupled to the clock generator, and configured for storing a period parameter and outputting a counting value by counting the pulses of the clock signal based on the period parameter and a bidirectional counting mode. The comparing unit is coupled to the counting unit and is configured for comparing the counting value and a comparing threshold to output a level control signal. The signal generating unit is coupled to the comparing unit and configured for generating a pulse width modulation signal according to the level control signal. When the period parameter is odd, the counting value outputted by the counting unit is equal to a middle value in the two continuous clock cycles.

Abstract: A LED fabrication method includes: providing a substrate; forming a low-temperature AlxGa1-xN (0?x?1) layer over the growth substrate; setting the growth pressure from high to low and temperature and rotation rate from low to high to realize change from three-dimensional growth to two-dimensional growth of the GaN structure layer before growth of the multiple quantum-well layer, in which, Si is doped at position approximate to the multiple quantum-well layer to form an undoped gradient GaN layer and an N-type gradient GaN layer; growing a multiple quantum-well layer, an AlxGa1-xN (0?x?1) layer and a P-type layer; and during later chip fabrication, dividing the epitaxial wafer over the etched N-type platform into chip grains and immersing them in chemical solutions for wet etching; and forming an inverted pyramid structure with rough side wall over the multiple quantum-well layer to improve light-emitting efficiency.