Abstract: The present disclosure provides a method of determining a leakage of a semiconductor manufacturing tool. The method includes: placing a substrate including a material layer on the substrate into a chamber of the semiconductor manufacturing tool; delivering a gas into the chamber to react with the material layer; obtaining a gas composition inside the chamber; and comparing the gas composition to a referential gas composition. The leakage is determined to exist if the gas composition is substantially different from the referential gas composition.

Abstract: The present disclosure provides a mechanism for filtering an etching byproduct during semiconductor fabrication. The mechanism includes: an etching tool, configured to etch a portion of a material layer and having an outlet for discharging the etching byproduct formed from the etched portion of the material layer; a pipeline, for allowing the etching byproduct to flow through, the pipeline having a first end connected to the outlet of the etching tool and a second end distal to the first end and the etching tool; and a filter, disposed between the first end and the second end and configured to filter the etching byproduct. The filter includes a solidifier configured to solidify the etching byproduct by freezing or heating, and a medium configured to retain the etching byproduct solidified by the solidifier.

Abstract: A data-processing device is provided. The data-processing device includes: a flash memory, a computation unit, and a flash-memory controller. The flash-memory controller is electrically connected to the computation unit, and configured to control access to the flash memory. The flash-memory controller allocates a first execute-only memory (XOM) setting and a second XOM setting in a first memory bank and a second memory bank of the flash memory, respectively. The flash-memory controller allocates one or more XOM spaces in the flash memory according to the first XOM setting or the second XOM setting.

Abstract: An audio synchronization processing method is provided. The method includes the following steps: receiving an input request signal; in response to receiving the input request signal, starting performing a counting operation according to a basic clock signal; outputting an output request signal according to a sampling-clock signal; in response to outputting the output request signal, stopping performing the counting operation to obtain a counting value; determining whether synchronization has been achieved based on the counting value; and in response to determining that the synchronization has not been reached, adjusting a frequency of the sampling-clock signal according to the counting value.

Abstract: An audio synchronization processing method is provided. The method includes the following steps: receiving an input request signal; in response to receiving the input request signal, starting performing a counting operation according to a basic clock signal; outputting an output request signal according to a sampling-clock signal; in response to outputting the output request signal, stopping performing the counting operation to obtain a counting value; determining whether synchronization has been achieved based on the counting value; and in response to determining that the synchronization has not been reached, adjusting a frequency of the sampling-clock signal according to the counting value.

Abstract: A data-processing device is provided. The data-processing device includes: a flash memory, a computation unit, and a flash-memory controller. The flash-memory controller is electrically connected to the computation unit, and configured to control access to the flash memory. The flash-memory controller allocates a first execute-only memory (XOM) setting and a second XOM setting in a first memory bank and a second memory bank of the flash memory, respectively. The flash-memory controller allocates one or more XOM spaces in the flash memory according to the first XOM setting or the second XOM setting.

Abstract: A pulse width modulation signal generation circuit and a pulse width modulation signal generation method are provided. A clock generator is configured for generating a clock signal including a plurality of pulses. The counting unit is coupled to the clock generator, and configured for storing a period parameter and outputting a counting value by counting the pulses of the clock signal based on the period parameter and a bidirectional counting mode. The comparing unit is coupled to the counting unit and is configured for comparing the counting value and a comparing threshold to output a level control signal. The signal generating unit is coupled to the comparing unit and configured for generating a pulse width modulation signal according to the level control signal. When the period parameter is odd, the counting value outputted by the counting unit is equal to a middle value in the two continuous clock cycles.

Abstract: A pulse width modulation signal generation circuit and a pulse width modulation signal generation method are provided. A clock generator is configured for generating a clock signal including a plurality of pulses. The counting unit is coupled to the clock generator, and configured for storing a period parameter and outputting a counting value by counting the pulses of the clock signal based on the period parameter and a bidirectional counting mode. The comparing unit is coupled to the counting unit and is configured for comparing the counting value and a comparing threshold to output a level control signal. The signal generating unit is coupled to the comparing unit and configured for generating a pulse width modulation signal according to the level control signal. When the period parameter is odd, the counting value outputted by the counting unit is equal to a middle value in the two continuous clock cycles.

Abstract: A LED fabrication method includes: providing a substrate; forming a low-temperature AlxGa1-xN (0?x?1) layer over the growth substrate; setting the growth pressure from high to low and temperature and rotation rate from low to high to realize change from three-dimensional growth to two-dimensional growth of the GaN structure layer before growth of the multiple quantum-well layer, in which, Si is doped at position approximate to the multiple quantum-well layer to form an undoped gradient GaN layer and an N-type gradient GaN layer; growing a multiple quantum-well layer, an AlxGa1-xN (0?x?1) layer and a P-type layer; and during later chip fabrication, dividing the epitaxial wafer over the etched N-type platform into chip grains and immersing them in chemical solutions for wet etching; and forming an inverted pyramid structure with rough side wall over the multiple quantum-well layer to improve light-emitting efficiency.