Patents by Inventor Ming-Ying Tsai

Ming-Ying Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor structure including inter-layer dielectric
    Patent number: 10748809
    Abstract: A semiconductor structure includes a gate structure over a substrate. The semiconductor structure includes an inter-layer dielectric (ILD) over the substrate, wherein an upper portion of the ILD has a higher concentration of silicon atoms than a bottom portion of the ILD.
    Type: Grant
    Filed: January 7, 2019
    Date of Patent: August 18, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ta-wei Sung, Ming-Hui Li, Ming-Ying Tsai
  • Ion implanting method
    Patent number: 10651003
    Abstract: An ion implanting method includes providing a gas having a bonding energy ranged from about 220 kJ/mol to about 450 kJ/mol; ionizing the gas to form a plurality of types of ions; and directing at least one of the types of the ions to implant a substance. The gas includes at least one of N2H4, CH3N2H3, C6H5N2H3, CFCl3 and C(CH3)3F.
    Type: Grant
    Filed: November 28, 2016
    Date of Patent: May 12, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ming-Ying Tsai, Ming-Hui Li, Chia-Cheng Liu
  • SEMICONDUCTOR STRUCTURE INCLUDING INTER-LAYER DIELECTRIC
    Publication number: 20190164810
    Abstract: A semiconductor structure includes a gate structure over a substrate. The semiconductor structure includes an inter-layer dielectric (ILD) over the substrate, wherein an upper portion of the ILD has a higher concentration of silicon atoms than a bottom portion of the ILD.
    Type: Application
    Filed: January 7, 2019
    Publication date: May 30, 2019
    Inventors: Ta-wei SUNG, Ming-Hui LI, Ming-Ying TSAI
  • Semiconductor structure and fabrication method therefor
    Patent number: 10177026
    Abstract: A method of fabricating a semiconductor structure. The method includes forming a sacrificial gate structure, depositing a dielectric material, and implanting the dielectric material using a silicon cluster gas. The silicon cluster gas has two or more silicon atoms.
    Type: Grant
    Filed: July 17, 2017
    Date of Patent: January 8, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ta-wei Sung, Ming-Hui Li, Ming-Ying Tsai
  • ION IMPLANTING METHOD
    Publication number: 20180151369
    Abstract: An ion implanting method includes providing a gas having a bonding energy ranged from about 220 kJ/mol to about 450 kJ/mol; ionizing the gas to form a plurality of types of ions; and directing at least one of the types of the ions to implant a substance. The gas includes at least one of N2H4, CH3N2H3, C6H5N2H3, CFCl3 and C(CH3)3F.
    Type: Application
    Filed: November 28, 2016
    Publication date: May 31, 2018
    Inventors: Ming-Ying Tsai, Ming-Hui Li, Chia-Cheng Liu
  • SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREFOR
    Publication number: 20180151413
    Abstract: A method of fabricating a semiconductor structure. The method includes forming a sacrificial gate structure, depositing a dielectric material, and implanting the dielectric material using a silicon cluster gas. The silicon cluster gas has two or more silicon atoms.
    Type: Application
    Filed: July 17, 2017
    Publication date: May 31, 2018
    Inventors: Ta-wei SUNG, Ming-Hui LI, Ming-Ying TSAI
  • Isolation of the Mitotic Spindle Matrix and its Methods of Use
    Publication number: 20090280111
    Abstract: The invention encompasses a purified preparation of the mitotic spindle matrix essential for mitotic spindle assembly, which allows for identifying an agent that modulates a cell division and/or differentiation signaling pathway comprising determining the effect of the agent on spindle formation, MT nucleation, or lamin matrix assembly wherein the change in spindle formation, MT nucleation or lamin matrix assembly.
    Type: Application
    Filed: February 9, 2009
    Publication date: November 12, 2009
    Inventors: YIXIAN ZHENG, MING-YING TSAI
  • Isolation of the mitotic spindle matrix and its methods of use
    Patent number: 7510850
    Abstract: The invention encompasses a purified preparation of the mitotic spindle matrix essential for mitotic spindle assembly, which allows for identifying an agent that modulates a cell division and/or differentiation signaling pathway comprising determining the effect of the agent on spindle formation, MT nucleation, or lamin matrix assembly wherein the change in spindle formation, MT nucleation or lamin matrix assembly.
    Type: Grant
    Filed: November 13, 2006
    Date of Patent: March 31, 2009
    Assignee: Carnegie Institution of Washington
    Inventors: Yixian Zheng, Ming-Ying Tsai
  • Isolation of the mitotic spindle matrix and its methods of use
    Publication number: 20070141652
    Abstract: The invention encompasses a purified preparation of the mitotic spindle matrix essential for mitotic spindle assembly, which allows for identifying an agent that modulates a cell division and/or differentiation signaling pathway comprising determining the effect of the agent on spindle formation, MT nucleation, or lamin matrix assembly wherein the change in spindle formation, MT nucleation or lamin matrix assembly.
    Type: Application
    Filed: November 13, 2006
    Publication date: June 21, 2007
    Inventors: Yixian Zheng, Ming-Ying Tsai