Patents by Inventor Ming-Yong Jian

Ming-Yong Jian has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Lateral diffused metal-oxide-semiconductor device
    Patent number: 8587058
    Abstract: The present invention provides a lateral diffused metal-oxide-semiconductor device including a first doped region, a second doped region, a third doped region, a gate structure, and a contact metal. The first doped region and the third doped region have a first conductive type, and the second doped region has a second conductive type. The second doped region, which has a racetrack-shaped layout, is disposed in the first doped region, and has a long axis. The third doped region is disposed in the second doped region. The gate structure is disposed on the first doped region and the second doped region at a side of the third doped region. The contact metal is disposed on the first doped region at a side of the second doped region extending out along the long axis, and is in contact with the first doped region.
    Type: Grant
    Filed: January 2, 2012
    Date of Patent: November 19, 2013
    Assignee: United Microelectronics Corp.
    Inventors: An-Hung Lin, Hong-Ze Lin, Bo-Jui Huang, Wei-Shan Liao, Ting-Zhou Yan, Kun-Yi Chou, Chun-Wei Chen, Ming-Yong Jian
  • Lateral Diffused Metal-Oxide-Semiconductor Device
    Publication number: 20130168767
    Abstract: The present invention provides a lateral diffused metal-oxide-semiconductor device including a first doped region, a second doped region, a third doped region, a gate structure, and a contact metal. The first doped region and the third doped region have a first conductive type, and the second doped region has a second conductive type. The second doped region, which has a racetrack-shaped layout, is disposed in the first doped region, and has a long axis. The third doped region is disposed in the second doped region. The gate structure is disposed on the first doped region and the second doped region at a side of the third doped region. The contact metal is disposed on the first doped region at a side of the second doped region extending out along the long axis, and is in contact with the first doped region.
    Type: Application
    Filed: January 2, 2012
    Publication date: July 4, 2013
    Inventors: An-Hung Lin, Hong-Ze Lin, Bo-Jui Huang, Wei-Shan Liao, Ting-Zhou Yan, Kun-Yi Chou, Chun-Wei Chen, Ming-Yong Jian