Patents by Inventor Ming-Yu Chen

Ming-Yu Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190316598
    Abstract: A radiator fan has a case, a stator assembly, and an impeller assembly. The stator assembly is assembled in the case. The impeller assembly is assembled in the case and has an impeller, a shaft, and a magnetic ring. The impeller has a hub and multiple blades. The hub has a hub diameter. The multiple blades are connected to the hub, are disposed around the hub at equal angular intervals, and have a blade span diameter. A ratio of the hub diameter to the blade span diameter is greater than or equal to 0.395 and is less than or equal to 0.515. The shaft is rotatably assembled to the case. The magnetic ring is fixed inside the hub, is disposed around the shaft, and is separated from the shaft by a gap.
    Type: Application
    Filed: April 17, 2018
    Publication date: October 17, 2019
    Inventors: Dennis Eisen, Ming-Yin Wang, Shih-Chieh Su, Yen-Yu Chen, Wen-Dong Huang
  • Publication number: 20190312158
    Abstract: A photo-detecting apparatus includes an absorption layer configured to absorb photons and to generate photo-carriers from the absorbed photons, wherein the absorption layer includes germanium. A carrier guiding unit is electrically coupled to the absorption layer, wherein the carrier guiding unit includes a first switch including a first gate terminal.
    Type: Application
    Filed: April 8, 2019
    Publication date: October 10, 2019
    Inventors: Chien-Yu Chen, Yun-Chung Nah, Szu-Lin Cheng, Ming-Jay Yang, Han-Din Liu, Che-Fu Liang
  • Patent number: 10424543
    Abstract: A method of forming an overlay mark includes disposing a first feature of a plurality of first alignment segments extending along a first direction in a first layer, disposing a second feature of a plurality of second alignment segments extending along a second direction in a second layer over the first layer, and forming a third feature of a plurality of third alignment segments extending along the first direction and a plurality of fourth alignment segments extending along the second direction in a third layer over the second layer. In a plan view, each first alignment segment of the first alignment segments is adjacent to a corresponding third alignment segment of the third alignment segments along the first direction, and each second alignment segment of the second alignment segments is adjacent to a corresponding fourth alignment segment of the fourth alignment segments along the second direction.
    Type: Grant
    Filed: November 30, 2018
    Date of Patent: September 24, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chen-Yu Chen, Ming-Feng Shieh, Ching-Yu Chang
  • Publication number: 20190271591
    Abstract: A light source measurement monitoring method and system of a spectrometer are provided. The method includes: driving a test light source by a driving parameter; obtaining sensing data related to the test light source through a sensor; comparing the sensing data with a predetermined range to generate a comparison result; starting performing a spectrum measurement to a test object when the sensing data falls within the predetermined range; and sending a warning signal when the sensing data is out of the predetermined range.
    Type: Application
    Filed: February 27, 2019
    Publication date: September 5, 2019
    Applicant: InnoSpectra Corporation
    Inventors: Cheng-Hsiung Chen, Yung-Yu Huang, Ming-Hui Lin, He-Yi Hsieh, Hsi-Pin Li
  • Patent number: 10398410
    Abstract: A tension transmission device as a control system for a probing portion of a three-dimensional mechanical probe is fitted to a support portion. The tension transmission device includes a driving shaft, a first tension member, and a second tension member. The driving shaft defines first and second fastening points. The first fastening point and the second fastening point are located at axially-distanced points of the driving shaft which are not diametrically opposite. The first and second tension members wind around a circumference of the driving shaft guided by a first pulley and a second pulley, to rotate and manipulate the driven shaft of the probing portion.
    Type: Grant
    Filed: December 17, 2015
    Date of Patent: September 3, 2019
    Assignee: Shenzhen Mindray Bio-Medical Electronics Co., Ltd.
    Inventors: Ming Tang, Zhen-Yu Chen, Le-Yun Bai
  • Publication number: 20190267498
    Abstract: A photo-detecting apparatus includes a semiconductor substrate. A first germanium-based light absorption material is supported by the semiconductor substrate and configured to absorb a first optical signal having a first wavelength greater than 800 nm. A first metal line is electrically coupled to a first region of the first germanium-based light absorption material. A second metal line is electrically coupled to a second region of the first germanium-based light absorption material. The first region is un-doped or doped with a first type of dopants. The second region is doped with a second type of dopants. The first metal line is configured to control an amount of a first type of photo-generated carriers generated inside the first germanium-based light absorption material to be collected by the second region.
    Type: Application
    Filed: February 22, 2019
    Publication date: August 29, 2019
    Inventors: Szu-Lin Cheng, Chien-Yu Chen, Shu-Lin Chen, Yun-Chung Na, Ming-Jay Yang, Han-Din Liu, Che-Fu Liang
  • Publication number: 20190252340
    Abstract: A package structure is provided. The package structure includes a semiconductor die and a protective layer surrounding the semiconductor die. The package structure also includes a conductive structure and a warpage-control element over a same side of the protective layer. A bottom surface of the warpage-control element is higher than a bottom surface of the conductive structure. The bottom surface of the warpage-control element is lower than a top surface of the conductive bump.
    Type: Application
    Filed: April 29, 2019
    Publication date: August 15, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd
    Inventors: Hao-Jan PEI, Chih-Chiang TSAO, Wei-Yu CHEN, Hsiu-Jen LIN, Ming-Da CHENG, Ching-Hua HSIEH, Chung-Shi LIU
  • Publication number: 20190240744
    Abstract: A drill structure comprises a shank part and a bit part. A web is formed on the front end of the bit part. Two sides of the web are tilted backward to form two cutting faces. At least one flute (chip-discharge groove) is formed on the surface of the bit part. Each cutting face includes a primary cutting face and a secondary cutting face. The thickness of the prismatic web edge of at least one primary cutting face is smaller than the outer-side width of the primary cutting face. An auxiliary cutting face is extended to the wall of the flute from the cutting edge of the primary cutting face and a portion of a blade back of the secondary cutting face of another cutting face. The present invention decreases the drilling resistance during drilling a hole and increases the service life of the drill bit.
    Type: Application
    Filed: September 10, 2018
    Publication date: August 8, 2019
    Inventors: Sung Hao CHIEN, Li Yi CHAO, Feng Yu LIN, Cheng Chia LEE, Ming Yuan ZHAO, Chun Yu CHEN
  • Publication number: 20190244918
    Abstract: Methods of forming connector pad structures, interconnect structures, and structures thereof are disclosed. In some embodiments, a method of forming a connector pad structure includes forming an underball metallization (UBM) pad, and increasing a surface roughness of the UBM pad by exposing the UBM pad to a plasma treatment. A polymer material is formed over a first portion of the UBM pad, leaving a second portion of the UBM pad exposed.
    Type: Application
    Filed: April 22, 2019
    Publication date: August 8, 2019
    Inventors: Chia-Lun Chang, Chung-Shi Liu, Hsiu-Jen Lin, Hsien-Wei Chen, Ming-Da Cheng, Wei-Yu Chen
  • Patent number: 10368413
    Abstract: A light source module including a casing, a light guide plate, at least one light emitting element, and a reflector is provided. The light guide plate includes a plate body and an optical microstructure array. The optical microstructure array is located at a top surface of the plate body and includes a plurality of microstructure units. The microstructure units are recessed from the top surface towards the bottom surface and are shaped as inverted square pyramids, and a pyramid portion of each of the inverted square pyramids is formed by at least four surfaces. Each of the microstructure units includes two opposite first surfaces and two opposite second surfaces arranged in an alternating manner. Further, in each of the microstructure units, angles included between the two first surfaces and the top surface are identical, and angles included between the two second surfaces and the top surface are identical.
    Type: Grant
    Filed: January 9, 2019
    Date of Patent: July 30, 2019
    Assignees: LITE-ON ELECTRONICS (GUANGZHOU) LIMITED, Lite-On Technology Corporation
    Inventors: Kuo-Hui Chang, Kuan-Yu Chen, Yao-Chi Peng, Ming-Hung Chien
  • Publication number: 20190204151
    Abstract: A spectrometer including a spectrum sampling device and a spectrometer engine is provided. The spectrum sampling device outputs an identification signal. The spectrometer engine is electrically connected to the spectrum sampling device. The spectrometer engine receives the identification signal and a spectrum. The spectrometer engine has a plurality of wavelength correction functions, and the spectrometer engine selects one of the plurality of wavelength correction functions according to the identification signal. The spectrometer engine corrects the spectrum according to the selected wavelength correction function. Moreover, a spectrum sampling device and a spectrum correction method are also provided. The spectrometer of the invention is adapted to improve accuracy of spectrum measurement.
    Type: Application
    Filed: December 24, 2018
    Publication date: July 4, 2019
    Applicant: InnoSpectra Corporation
    Inventors: Ming-Hui Lin, Cheng-Hsiung Chen, He-Yi Hsieh, Yung-Yu Huang, Hsi-Pin Li
  • Patent number: 10332484
    Abstract: A terminal provided in the present disclosure, acquires values of one or more monitoring parameters. The terminal sets, according to the monitoring parameter, a blue light output value of a to-be-adjusted pixel displayed on a screen of the terminal when a value of at least one of the monitoring parameters meets a preset rule corresponding to the monitoring parameter, where the blue light output value is less than an original blue light output value of the to-be-adjusted pixel. The screen of the terminal displays the to-be-adjusted pixel according to the blue light output value such that the terminal can set, according to the monitoring parameter, the blue light output value of the to-be-adjusted pixel displayed on the screen of the terminal, and therefore the blue light can be adjusted intelligently, and an objective of vision protection without affecting user experience is achieved.
    Type: Grant
    Filed: September 9, 2014
    Date of Patent: June 25, 2019
    Assignee: HUAWEI TECHNOLOGIES CO., LTD.
    Inventors: Ming-Yu Chen, Tao Zheng, Guo Le
  • Patent number: 10324649
    Abstract: A method for partitioning magnetic area of non-volatile memory includes following steps. Original data stored in a storage space of a removable memory device is totally transferred to a backup space which is located in a place other than the removable memory device. The storage space of the removable memory device is partitioned. The original data stored in the backup space is totally transferred back to the storage space of the removable memory device after the storage space of the removable memory device being partitioned is finished.
    Type: Grant
    Filed: December 20, 2017
    Date of Patent: June 18, 2019
    Assignees: Inventec (Pudong) Technology Corporation, INVENTEC CORPORATION
    Inventors: Ming-Yuan Liu, Cheng-Yu Wu, Chian-Ting Chen, Huan-Chung Hsu, An-Chi Cheng, Chao-Chieh Chen
  • Publication number: 20190155983
    Abstract: The present disclosure describes a method for detecting unacceptable connection patterns. The method includes, using a processor to perform at least one of: performing an automated place-and-route (APR) process on a circuit layout that includes a first standard cell without a marker layer to generate a circuit graphic database system (GDS) file from the circuit layout, generating a standard-cell GDS file that includes a second standard cell with at least one marker layer applied to the second standard cell, and merging the circuit GDS file with the standard-cell GDS file to generate a merged GDS file that includes the first standard cell with at least one marker layer based on the second standard cell. The method further includes determining whether a connection pattern of the first standard cell in the merged GDS file is an unacceptable connection pattern.
    Type: Application
    Filed: February 28, 2018
    Publication date: May 23, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Sheng-Hsiung CHEN, Ming-Huei Tsai, Shao-Huan Wang, Shu-Yu Chen, Wen-Hao Chen, Chun-Chen Chen
  • Patent number: 10296798
    Abstract: A system of selecting a keyframe for iterative closest point (ICP) includes a reference frame selector that generates a reference frame according to a current frame and a current keyframe; an ICP loop unit that performs ICP on the reference frame and the current frame, thereby generating a pose of the current frame; and a keyframe update unit that generates a new keyframe according to an offset condition between the pose of the current frame and a pose of the reference frame.
    Type: Grant
    Filed: September 14, 2017
    Date of Patent: May 21, 2019
    Assignees: NCKU Research and Development Foundation, Himax Technologies Limited
    Inventors: Ming-Der Shieh, Chun-Wei Chen, Ting-Yu Lin, Der-Wei Yang
  • Publication number: 20190148570
    Abstract: An image sensor with an absorption enhancement semiconductor layer is provided. In some embodiments, the image sensor comprises a front-side semiconductor layer, an absorption enhancement semiconductor layer, and a back-side semiconductor layer that are stacked. The absorption enhancement semiconductor layer is stacked between the front-side and back-side semiconductor layers. The absorption enhancement semiconductor layer has an energy bandgap less than that of the front-side semiconductor layer. Further, the image sensor comprises a plurality of protrusions and a photodetector. The protrusions are defined by the back-side semiconductor layer, and the photodetector is defined by the front-side semiconductor layer, the absorption enhancement semiconductor layer, and the back-side semiconductor layer.
    Type: Application
    Filed: January 23, 2018
    Publication date: May 16, 2019
    Inventors: Ming-Chi Wu, Chien Nan Tu, Kun-Yu Lin, Shih-Shiung Chen
  • Publication number: 20190148267
    Abstract: In an embodiment, a device includes: an integrated circuit die; a first dielectric layer over the integrated circuit die; a first metallization pattern extending through the first dielectric layer to electrically connect to the integrated circuit die; a second dielectric layer over the first metallization pattern; an under bump metallurgy extending through the second dielectric layer; a third dielectric layer over the second dielectric layer and portions of the under bump metallurgy; a conductive ring sealing an interface of the third dielectric layer and the under bump metallurgy; and a conductive connector extending through the center of the conductive ring, the conductive connector electrically connected to the under bump metallurgy.
    Type: Application
    Filed: February 28, 2018
    Publication date: May 16, 2019
    Inventors: Wei-Yu Chen, An-Jhih Su, Der-Chyang Yeh, Li-Hsien Huang, Ming Shih Yeh
  • Patent number: 10290610
    Abstract: A PoP device includes a first package structure, a second package structure and an underfill layer is provided. The first package structure includes a die, a TIV and an encapsulant. The TIV is aside the die. The encapsulant encapsulates sidewalls of the die and a portion of sidewalls of the TIV. The second package structure is connected to the first package structure through a connector. The underfill layer is disposed to fill a space between the first package structure and the second package structure. A portion of the underfill layer is disposed between the encapsulant and the TIV to cover a portion of sidewalls of the TIV.
    Type: Grant
    Filed: August 29, 2017
    Date of Patent: May 14, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Li-Hsien Huang, An-Jhih Su, Der-Chyang Yeh, Hua-Wei Tseng, Li-Hui Cheng, Po-Hao Tsai, Wei-Yu Chen, Ming-Shih Yeh
  • Publication number: 20190139954
    Abstract: Methods for tuning threshold voltages of fin-like field effect transistor devices are disclosed herein. An exemplary method includes forming a first opening in a first gate structure and a second opening in a second gate structure. The first gate structure is disposed over a first fin structure, and the second gate structure is disposed over a second fin structure. The method further includes filling the first opening and the second opening by forming a gate dielectric layer, forming a threshold voltage tuning layer over the gate dielectric layer, etching back the threshold voltage tuning layer in the second opening, forming a work function layer over the threshold voltage tuning layer, and forming a metal fill layer over the work function layer. The threshold voltage tuning layer includes tantalum and nitrogen. The etching back uses a tungsten-chloride containing precursor.
    Type: Application
    Filed: November 9, 2017
    Publication date: May 9, 2019
    Inventors: Chung-Liang Cheng, Wei-Jen Chen, Yen-Yu Chen, Ming-Hsien Lin
  • Publication number: 20190139828
    Abstract: Methods for tuning threshold voltages of fin-like field effect transistor (FinFET) devices are disclosed herein. An exemplary integrated circuit device includes a high voltage n-type FinFET, a high voltage p-type FinFET, a low voltage n-type FinFET, and a low voltage p-type FinFET. Threshold voltages of the high voltage n-type FinFET and the high voltage p-type FinFET are greater than threshold voltages of the low voltage n-type FinFET and the low voltage p-type FinFET, respectively. The high voltage n-type FinFET, the high voltage p-type FinFET, the low voltage n-type FinFET, and the low voltage p-type FinFET each include a threshold voltage tuning layer that includes tantalum and nitrogen. Thicknesses of the threshold voltage tuning layer of the low voltage n-type FinFET and the low voltage p-type FinFET are less than thicknesses of the threshold voltage tuning layer of the high voltage n-type FinFET and the high voltage p-type FinFET, respectively.
    Type: Application
    Filed: November 26, 2018
    Publication date: May 9, 2019
    Inventors: Chung-Liang Cheng, Wei-Jen Chen, Yen-Yu Chen, Ming-Hsien Lin