Abstract: A battery module includes an insulating base, a pair of electrodes and multiple battery packs. Each electrode is installed to the insulating base and has a bridge portion and a wire connecting part exposed from the insulating base, and a pair of lugs is extended smoothly from each battery pack, and an end of at least a part of the lugs is attached to each bridge portion correspondingly. Therefore, the lug is not being twisted or deformed easily, and the battery module may have good conductive efficiency, long service life, and convenience of changing the battery pack.

Abstract: Interconnect structure packages (e.g., through silicon vias (TSV) packages, through interlayer via (TIV) packages) may be pre-manufactured as opposed to forming TIVs directly on a carrier substrate during a manufacturing process for a semiconductor die package at backend packaging facility. The interconnect structure packages may be placed onto a carrier substrate during manufacturing of a semiconductor device package, and a semiconductor die package may be placed on the carrier substrate adjacent to the interconnect structure packages. A molding compound layer may be formed around and in between the interconnect structure packages and the semiconductor die package.

Abstract: A package structure including a semiconductor die, an encapsulant, a redistribution structure, and a through insulating via is provided. The first redistribution structure includes an insulating layer and a circuit layer. The semiconductor die is disposed on the first redistribution structure. The semiconductor die includes a semiconductor base, through semiconductor vias, a dielectric layer, and bonding connectors. Through semiconductor vias penetrate through the semiconductor base. The dielectric layer is disposed on a backside of the semiconductor base. The dielectric layer of the semiconductor die is bonded with the insulating layer of the first redistribution structure. The bonding connectors are embedded in the dielectric layer and connected to the through semiconductor vias. The bonding connectors of the semiconductor die are bonded with bonding pads of the circuit layer. The encapsulant is disposed on the first redistribution structure and encapsulates the semiconductor die.

Abstract: A semiconductor package includes a first redistribution circuit structure, a semiconductor die, and an electrically conductive structure. The semiconductor die is disposed over and electrically coupled to the first redistribution circuit structure. The electrically conductive structure connects a non-active side of the semiconductor die to a conductive feature of the first redistribution circuit structure, where the semiconductor die is thermally couped to the first redistribution circuit structure through the electrically conductive structure, and the electrically conductive structure includes a structure of multi-layer with different materials.

Abstract: The invention provides a low-temperature hydrogen oxidation system comprising at least one hydrogen oxidation device, at least one hydrogen reaction module is disposed in the hydrogen oxidation device, at least one hydrogen reaction channel is formed in the hydrogen reaction module and is provided with at least one catalyst, the hydrogen oxidation device is provided with at least one gas inlet channel and at least one gas outlet channel to communicate with the hydrogen reaction channel, at least one cooling channel is further formed in the hydrogen oxidation device; and at least one gas humidifying device disposed at a position of the gas inlet channel.

Abstract: A package structure includes a first redistribution circuit structure, a semiconductor die, a connecting film, and a second redistribution circuit structure. The first redistribution circuit structure includes a dielectric structure and a routing structure disposed therein, where the dielectric structure includes a trench exposing the routing structure. The semiconductor die is disposed on and electrically coupled to the first redistribution circuit structure. The connecting film is disposed in the trench and between the semiconductor die and the first redistribution circuit structure, and the semiconductor die is thermally coupled to the routing structure through the connecting film.

Abstract: A semiconductor package includes a first substrate and a first semiconductor device. The first semiconductor device is bonded to the first substrate and includes a second substrate, a plurality of first dies and a second die. The first dies are disposed between the first substrate and the second substrate. The second die is surrounded by the first dies. A cavity is formed among the first dies, the first substrate and the second substrate, and a gap is formed between the second die and the first substrate.

Abstract: A hydrogen recycle system comprises a processing device, an electrochemical hydrogen purification device and a dewatering device. The processing device is used to receive and process a mixed gas and to remove harmful substances; the electrochemical hydrogen purification device is connected with the processing device and used to remove non-hydrogen gases and impurities in the mixed gas; and the dewatering device is connected with the electrochemical hydrogen purification device and used to remove moisture in the purified hydrogen.

Abstract: A substrate for counter electrode of dye-sensitized solar cell is made of a composite material, which is prepared by: a) compounding vinyl ester and graphite powder to form bulk molding compound (BMC) material, the graphite powder content ranging from 60 wt % to 95 wt % based on the total weight of the graphite powder and vinyl ester, wherein 0.01-10 wt % of an electrically conductive filler, based on the weight of the vinyl ester resin, is optionally added during the compounding; b) molding the BMC material from step a) to form a substrate for the counter electrode having a desired shaped at 80-200° C. and 500-4000 psi.

Abstract: A graphite-vinyl ester resin composite conducting plate is prepared in the present invention. The conducting plate can be used as a bipolar plate for a fuel cell, counter electrode for dye-sensitized solar cell and electrode of vanadium redox battery. The conducting plate is prepared as follows: a) compounding vinyl ester resin and graphite powder to form a bulk molding compound (BMC) material, the graphite powder content ranging from 70 wt % to 95 wt % based on the total weight of the graphite powder and vinyl ester, wherein 0.01-15 wt % functionalized graphene, based on the weight of the vinyl ester resin, are added during the compounding; b) molding the BMC material from step a) to form a conducting plate having a desired shaped at 80-250° C. and 500-4000 psi.

Abstract: A substrate for counter electrode of dye-sensitized solar cell is made of a composite material, which is prepared by: a) compounding vinyl ester and graphite powder to form bulk molding compound (BMC) material, the graphite powder content ranging from 60 wt % to 95 wt % based on the total weight of the graphite powder and vinyl ester, wherein 0.01-10 wt % of an electrically conductive filler, based on the weight of the vinyl ester resin, is optionally added during the compounding; b) molding the BMC material from step a) to form a substrate for the counter electrode having a desired shaped at 80-200° C. and 500-4000 psi.

Abstract: A composite bipolar plate for a polymer electrolyte membrane membrane fuel cell (PEMFC) is prepared as follows: a) melt compounding a polypropylene resin and graphite powder at 100-250° C. and 30-150 rpm to form a melt compounding material, the graphite powder content ranging from 50 wt % to 95 wt % based on the total weight of the graphite powder and the polypropylene resin, and the polypropylene resin being a homopolymer of propylene or a copolymer of propylene and ethylene, wherein 0.05-20 wt % carbon nanotubes, based on the weight of the polypropylene resin, are added during the melt compounding; and b) molding the melt compounding material from step a) to form a bipolar plate having a desired shaped at 100-250° C. and 500-4000 psi.

Abstract: A reinforced mesh structure containing bipolar plate for a polymer electrolyte membrane fuel cell (PEMFC) is prepared as follows: a) compounding vinyl ester and graphite powder to form bulk molding compound (BMC) material, the graphite powder content ranging from 60 wt % to 95 wt % based on the total weight of the graphite powder and vinyl ester, wherein 0.05-10 wt % reactive carbon nanotubes modified by acyl chlorination-amidization reaction, based on the weight of the vinyl ester resin, are added during the compounding; b) molding the BMC material from step a) with a metallic net being embedded in the molded BMC material to form a bipolar plates having a desired shaped at 80-200° C. and 500-4000 psi.

Abstract: In a process for producing nanocarbon materials, a metal reducing agent and a carbon source are subjected to a chemical reduction reaction under an atmosphere which will not interfere with the reaction and at a temperature preferably lower than 1000° C., such that a nanocarbon material having a graphite-like structure is formed therefrom. Optionally, an additive, e.g. a fullerene compound, or a porous substrate such as zeolite powder, may be used during the production of the nanocarbon material.