Abstract: Transistors with improved saturation drain current and methods for making such transistors are disclosed. The gate is formed in the shape of a longitudinal trench and a plurality of lateral trenches below the longitudinal trench. The resulting dual-recess structure increases the surface area of the gate, which permits additional charge carriers and increases the saturation drain current of the transistor. Such transistors can be useful in high voltage and medium voltage applications such as in display driver integrated circuits.

Abstract: A manufacturing apparatus and a manufacturing method for a molded lens are provided. A substrate is located between a first molding core and a second molding core, and the first molding core is moved so that the substrate is formed into a lens. A distance sensor sends a plurality of press distance parameters of moving the first molding core, and the press distance parameters may form a press curve. The press curve and a reference press curve is compared for a difference by a processor and a comparator. The processor determines whether the difference is within an error range.

Abstract: A manufacturing apparatus and a manufacturing method for a molded lens are provided. A substrate is located between a first molding core and a second molding core, and the first molding core is moved so that the substrate is formed into a lens. A distance sensor sends a plurality of press distance parameters of moving the first molding core, and the press distance parameters may form a press curve. The press curve and a reference press curve is compared for a difference by a processor and a comparator. The processor determines whether the difference is within an error range.