Abstract: A strip-line structure includes a first ground plane formed on a first layer; a second ground plane formed on a second layer; a first power plane formed on the first layer, wherein the first ground plane and the first power plane are separated by a dielectric material; a stipe line formed on a third layer for signal transmission, wherein the third layer is between the first layer and the second layer; a ground line formed on the third layer, wherein the ground line and the strip line are separated by the dielectric material; a first via for electrically connecting the first ground plane and the second ground plane; and a second via for electrically connecting the ground line and the second ground plane.

Abstract: Exemplary processing methods may include depositing a boron-containing material or a silicon-and-boron-containing material on a substrate disposed within a processing region of a semiconductor processing chamber. The methods may include etching portions of the boron-containing material or the silicon-and-boron-containing material with a chlorine-containing precursor to form one or more features in the substrate. The methods may also include removing remaining portions of the boron-containing material or the silicon-and-boron-containing material from the substrate with a fluorine-containing precursor.