Abstract: A semiconductor package including a first semiconductor die, a second semiconductor die, a first insulating encapsulation, a dielectric layer structure, a conductor structure and a second insulating encapsulation is provided. The first semiconductor die includes a first semiconductor substrate and a through silicon via (TSV) extending from a first side to a second side of the semiconductor substrate. The second semiconductor die is disposed on the first side of the semiconductor substrate. The first insulating encapsulation on the second semiconductor die encapsulates the first semiconductor die. A terminal of the TSV is coplanar with a surface of the first insulating encapsulation. The dielectric layer structure covers the first semiconductor die and the first insulating encapsulation. The conductor structure extends through the dielectric layer structure and contacts with the through silicon via.

Abstract: A strip-line structure includes a first ground plane formed on a first layer; a second ground plane formed on a second layer; a first power plane formed on the first layer, wherein the first ground plane and the first power plane are separated by a dielectric material; a stipe line formed on a third layer for signal transmission, wherein the third layer is between the first layer and the second layer; a ground line formed on the third layer, wherein the ground line and the strip line are separated by the dielectric material; a first via for electrically connecting the first ground plane and the second ground plane; and a second via for electrically connecting the ground line and the second ground plane.

Abstract: Exemplary processing methods may include depositing a boron-containing material or a silicon-and-boron-containing material on a substrate disposed within a processing region of a semiconductor processing chamber. The methods may include etching portions of the boron-containing material or the silicon-and-boron-containing material with a chlorine-containing precursor to form one or more features in the substrate. The methods may also include removing remaining portions of the boron-containing material or the silicon-and-boron-containing material from the substrate with a fluorine-containing precursor.