Abstract: A method of forming a semiconductor device includes forming a first epitaxial layer over a substrate to form a wafer, depositing a dielectric layer over the first epitaxial layer, patterning the dielectric layer to form an opening, etching the first epitaxial layer through the opening to form a recess, forming a second epitaxial layer in the recess, etching the dielectric layer to expose a top surface of the first epitaxial layer, and planarizing the exposed top surface of the first epitaxial layer and a top surface of the second epitaxial layer.

Abstract: A method of forming a semiconductor device includes forming a first epitaxial layer over a substrate to form a wafer, depositing a dielectric layer over the first epitaxial layer, patterning the dielectric layer to form an opening, etching the first epitaxial layer through the opening to form a recess, forming a second epitaxial layer in the recess, etching the dielectric layer to expose a top surface of the first epitaxial layer, and planarizing the exposed top surface of the first epitaxial layer and a top surface of the second epitaxial layer.

Abstract: A pallet structure having a preset shape for holding a support, the pallet structure comprising a shape main body and at least one support accommodated in the shape main body. The shape main body is provided with transverse grooves for accommodating a fork for lifting pallet. An elongate transverse strip can be placed in the transverse groove. The rigidity and load capacity of the pallet structure can be enhanced when placed on the ground with goods or lifted from the ground. The shape main body is provided with vertical grooves conformed to the appearance of the support, which allows the support on the shape main body to not easily displace and loosen, and also provides supporting and fork-lifting rigidity during carrying the goods with better weather resistance to avoid moisture and rust. Moreover, different load capacities can be achieved by modifying the amount, material, shape, thickness, etc. of the support.

Abstract: Semiconductor devices and methods are provided. In an embodiment, a method includes providing a workpiece including a first hard mask layer on a top surface of a substrate, performing an ion implantation process to form a doped region in the substrate, after the performing of the ion implantation process, annealing the workpiece at temperature T1. The method also includes selectively removing the first hard mask layer, after the selectively removing of the first hard mask layer, performing a pre-bake process at temperature T2, and, after the performing of the pre-bake process, epitaxially growing a vertical stack of alternating channel layers and sacrificial layers on the substrate, where the temperature T2 is lower than the temperature T1.

Abstract: The present disclosure provides a method that includes providing a substrate including a first circuit region and a second circuit region; forming a semiconductor stack on the substrate, wherein the semiconductor stack includes first semiconductor layers of a first composition and second semiconductor layers of a second composition alternatively stacked on the substrate; performing a first patterning process to the semiconductor stack and the substrate to form first trenches having a first depth; and performing a second patterning process to the semiconductor stack and the substrate, thereby forming second trenches of a second depth in the first circuit region and third trenches of a third depth in the second circuit region, the third depth being less than the second depth.

Abstract: A method includes forming a doped region on a top portion of a substrate, forming a first epitaxial layer over the substrate, forming a recess in the first epitaxial layer, the recess being aligned to the doped region, performing a surface clean treatment in the recess, the surface clean treatment includes: oxidizing surfaces of the recess to form an oxide layer in the recess, and removing the oxide layer from the surfaces of the recess, and forming a second epitaxial layer in the recess.

Abstract: A method includes forming a fin protruding from a substrate, forming a first dielectric feature adjacent to the fin over the substrate, forming a cladding layer over the fin and the first dielectric feature, and removing a portion of the cladding layer to form an opening. The opening exposes the first dielectric feature. The method further includes forming a second dielectric feature adjacent to the cladding layer, the second dielectric feature filling the opening, forming a dummy gate stack over the fin and the second dielectric feature, forming source/drain (S/D) features in the fin adjacent to the dummy gate stack, and replacing the dummy gate stack and the cladding layer with a metal gate stack. The second dielectric feature divides the metal gate stack.

Abstract: A method of forming a semiconductor device includes forming a first epitaxial layer over a substrate to form a wafer, depositing a dielectric layer over the first epitaxial layer, patterning the dielectric layer to form an opening, etching the first epitaxial layer through the opening to form a recess, forming a second epitaxial layer in the recess, etching the dielectric layer to expose a top surface of the first epitaxial layer, and planarizing the exposed top surface of the first epitaxial layer and a top surface of the second epitaxial layer.

Abstract: A method includes forming a doped region on a top portion of a substrate, forming a first epitaxial layer over the substrate, forming a recess in the first epitaxial layer, the recess being aligned to the doped region, performing a surface clean treatment in the recess, the surface clean treatment includes: oxidizing surfaces of the recess to form an oxide layer in the recess, and removing the oxide layer from the surfaces of the recess, and forming a second epitaxial layer in the recess.

Abstract: A method of forming a semiconductor device includes forming a first epitaxial layer over a substrate to form a wafer, depositing a dielectric layer over the first epitaxial layer, patterning the dielectric layer to form an opening, etching the first epitaxial layer through the opening to form a recess, forming a second epitaxial layer in the recess, etching the dielectric layer to expose a top surface of the first epitaxial layer, and planarizing the exposed top surface of the first epitaxial layer and a top surface of the second epitaxial layer.

Abstract: A method includes forming a doped region on a top portion of a substrate, forming a first epitaxial layer over the substrate, forming a recess in the first epitaxial layer, the recess being aligned to the doped region, performing a surface clean treatment in the recess, the surface clean treatment includes: oxidizing surfaces of the recess to form an oxide layer in the recess, and removing the oxide layer from the surfaces of the recess, and forming a second epitaxial layer in the recess.

Abstract: A composite board structure and a box structure. According to the composite board structure, by using through holes (214) and pits (21), under the condition of greatly reducing the material and manufacturing costs, the structural performance of the board is improved, and the bending strength of the board is improved, so that the board can replace the existing boards such as corrugated paper, can be applied to structures such as a box, can replace the existing board and box structures under the condition of greatly reducing the material and manufacturing costs, can also be repeatedly used, and has great contribution to environmental protection and related industries.

Abstract: A method includes forming a doped region on a top portion of a substrate, forming a first epitaxial layer over the substrate, forming a recess in the first epitaxial layer, the recess being aligned to the doped region, performing a surface clean treatment in the recess, the surface clean treatment includes: oxidizing surfaces of the recess to form an oxide layer in the recess, and removing the oxide layer from the surfaces of the recess, and forming a second epitaxial layer in the recess.

Abstract: A method includes forming a fin structure on a substrate, forming a dummy gate structure wrapped around the fin structure, depositing an Interlayer Dielectric (ILD) layer over the fin structure, removing the dummy gate structure to expose a portion of the fin structure, and performing an etching process on the portion of the fin structure to reduce a width of the portion of the fin structure.

Abstract: A method includes forming a fin structure on a substrate, forming a dummy gate structure wrapped around the fin structure, depositing an Interlayer Dielectric (ILD) layer over the fin structure, removing the dummy gate structure to expose a portion of the fin structure, and performing an etching process on the portion of the fin structure to reduce a width of the portion of the fin structure.

Abstract: A backpack structure is adapted to provide a storage space, and integrated with a tent structure. The backpack body has a right connection portion and a left connection portion to connect the left sidewall and the right sidewall, wherein the connections are pins, buttons, strips or velcros. The tent structure is stored in the compartment of the backpack body, or the left sidewall and the right sidewall. The tent structure includes a tent base, a left tent portion and a right tent portion. The compartment may has pads, made of cushioning materials, such as foam, to replace the camping mat, for rest. Therefore, the backpack structure of the invention is light for the users of outdoor activities. Moreover, the backpack structure may combine with a trolley structure for drawing easily, or the backpack structure may be designed as a luggage suitcase.

Abstract: A device comprises a substrate comprising a first portion and a second portion separated by an isolation region, a first gate structure over the first portion, a first drain/source region and a second drain/source region in the first portion and on opposite sides of the first gate structure, wherein the first drain/source region and the second drain/source have concave surfaces, a second gate structure over the second portion and a third drain/source region and a fourth drain/source region in the second portion and on opposite sides of the second gate structure, wherein the third drain/source region and the fourth drain/source have the concave surfaces.

Abstract: A grill pan structure with convection heating is provided to make uniformly heating within the oven. The grill pan structure includes a heat flow layer and at least one support plate. The heat flow layer includes at least one hole for a heat source to pass through for roasting. Also, the heat flow layer includes at least one recess to receive the dropped oils of the foods during roasting. The first support plate further includes at least one inclined guiding surface to guide the dropped oil to the recess. Therefore, uniformly heating for roasting foods and eliminate from turning over the foods during roasting are achieved. And the oven is still clean after roasting, which is convenient to use.

Abstract: A backpack structure is adapted to provide a storage space, and integrated with a tent structure. The backpack body has a right connection portion and a left connection portion to connect the left sidewall and the right sidewall, wherein the connections are pins, buttons, strips or velcros. The tent structure is stored in the compartment of the backpack body, or the left sidewall and the right sidewall. The tent structure includes a tent base, a left tent portion and a right tent portion. The compartment may has pads, made of cushioning materials, such as foam, to replace the camping mat, for rest. Therefore, the backpack structure of the invention is light for the users of outdoor activities. Moreover, the backpack structure may combine with a trolley structure for drawing easily, or the backpack structure may be designed as a luggage suitcase.

Abstract: A device comprises a substrate comprising a first portion and a second portion separated by an isolation region, a first gate structure over the first portion, a first drain/source region and a second drain/source region in the first portion and on opposite sides of the first gate structure, wherein the first drain/source region and the second drain/source have concave surfaces, a second gate structure over the second portion and a third drain/source region and a fourth drain/source region in the second portion and on opposite sides of the second gate structure, wherein the third drain/source region and the fourth drain/source have the concave surfaces.