Abstract: There is provided a method of operating an Open Radio Access Network (O-RAN) 5G Functional Application Platform Interface (FAPI) between an O-RAN distributed unit (O-DU) PHY (Layer-1 entity, L1), i.e., O-DU L1, and an O-DU MAC (Layer-2 entity, L2), i.e., O-DU L2. The method includes (a) sending, from the O-DU L2 to the O-DU L1, a message informing the O-DU L1 to perform a User Equipment (UE) correlation calculation, and on which Sounding Reference Signal (SRS) resources the correlation calculation needs to be conducted, (b) sending, from the O-DU L1 to the O-DU L2, a message containing correlation information of UEs served in a cell, and (c) sending, from the O-DU L1 to the O-DU L2, a message containing information of the SRS power, noise and interference of each UE served in the cell.

Abstract: A color filter substrate, a display panel and a display device are provided. The color filter substrate includes: a base substrate; a color conversion layer on the base substrate; a covering layer on a side of the color conversion layer away from the base substrate; and a polarizing layer on a side of the covering layer away from the base substrate. The polarizing layer includes a wire grid polarizer. The covering layer includes a first covering sub-layer and a second covering sub-layer, the first covering sub-layer is located on the side of the color conversion layer away from the base substrate, the second covering sub-layer is located on a side of the first covering sub-layer away from the base substrate, and a material of the first covering sub-layer is different from a material of the second covering sub-layer.

Abstract: Provided are an Internet of Things rule engine-based terminal control method and apparatus, and a device and a medium. The method comprises: parsing, by using a thing model, terminal data reported by a target terminal, so as to obtain parsed data, and storing same in a pulsar message queue, such that pluggable extension plugins and decoupling are realized; performing data enhancement on the parsed data, thereby effectively enhancing the relevance between pieces of data; processing the enhanced data by using a calcite framework and a data processing rule, so as to obtain target data; performing format conversion on the target data by means of an interface of a linkage terminal, which is determined on the basis of a linkage rule; and according to a terminal linkage rule and converted data, controlling the linkage terminal to perform linkage, thereby realizing linkage between terminals according to a rule engine.

Abstract: Provided are a cloud platform binding method and system for an Internet of Things card, and a device and a medium. The method comprises: in response to a device online instruction, acquiring a login message and device identification information and sending to an Internet of Things server; if they pass the verification of the Internet of Things server, loading a preset PGW network element configuration first-level script, and pushing acquired card information to the Internet of Things server; receiving a cloud object storage address which corresponds to the card information; if a data uploading request is detected, loading a preset PGW network element configuration second-level script, and sending the cloud object storage address to the Internet of Things server for legitimacy verification; and if it passes the legitimacy verification, sending the card information and acquired device data to the Internet of Things server. An automatic cloud-card binding function is realized.

Abstract: The invention is directed to Anti-LILRB1 and anti-LILRB2 bispecific antibodies, anti-LILRB1 antibodies, and anti-LILRB2 antibodies, their uses and pharmaceutical compositions thereof.

Abstract: Disclosed in the present invention are a battery pack for an electric vehicle, and an electric vehicle comprising same. The battery pack for the electric vehicle comprises: a plurality of battery accommodating areas, which are arranged in a width direction of the electric vehicle, the plurality of battery accommodating areas comprising a middle accommodating area and side accommodating areas, and each battery accommodating area accommodating multiple layers of battery modules; and lock connection structures, which are used for matching locking mechanisms on the electric vehicle so as to lock the battery pack on the electric vehicle, the space in a vertical direction is fully utilized, the accommodating number of the battery modules is increased, the capacity of the battery pack is thus improved, the arrangement of the battery modules is rational, and the size of the battery pack in a horizontal direction is not increased.

Abstract: Discloses an electric vehicle battery swapping assembly and battery swapping station. An electric vehicle battery swapping assembly comprises a battery swapping equipment and a battery pack box, both the battery swapping equipment and the battery pack box are arranged at the bottom of the electric vehicle, and the battery pack box is removed or installed from the bottom of the electric vehicle by means of the battery swapping equipment, during the removal or installation process, the height of the electric vehicle is unchanged, and the bearing plane for carrying the battery swapping equipment and the bearing plane for carrying the electric vehicle are in the same plane. The invention does not need to lift the vehicle or dig a hole on the ground to set up the battery swapping equipment, which improves the safety of the battery swapping station and can improve the battery swapping efficiency.

Abstract: Disclosed are a system and method for automatically and systematically generating device-based design rules and corresponding device-based design rule checking (DRC) codes. In the system and method, design rules associated with specific devices are generated based on at least one table of related data (e.g., maturity status information, restriction status information, etc.) for different devices. Based on the design rules and on unique definitions for the specific devices, design rule checking (DRC) codes associated with the specific devices are generated. By using this approach, comprehensive and accurate device-based design rules and corresponding device-based DRC codes can be quickly generated to ensure acceptable product reliability and yield. Furthermore, processes used to generate the device-based DRC codes can be iteratively repeated (e.g.

Abstract: The invention relates to pyrazole derivatives, to their use in medicine, to compositions containing them, to processes for their preparation and to intermediates used in such processes. More particularly the invention relates to HbS modulators of formula (I) or tautomers thereof, or pharmaceutically acceptable salts of said modulators or tautomers thereof, wherein X, Y, R2 and R3 are as defined in the description. HbS modulators are potentially useful in the treatment of a wide range of disorders, including sickle cell disease (SCD).

Abstract: A color filter substrate, a display panel and a display device are provided. The color filter substrate includes: a base substrate; a color conversion layer on the base substrate; a covering layer on a side of the color conversion layer away from the base substrate; and a polarizing layer on a side of the covering layer away from the base substrate. The polarizing layer includes a wire grid polarizer. The covering layer includes a first covering sub-layer and a second covering sub-layer, the first covering sub-layer is located on the side of the color conversion layer away from the base substrate, the second covering sub-layer is located on a side of the first covering sub-layer away from the base substrate, and a material of the first covering sub-layer is different from a material of the second covering sub-layer.

Abstract: The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a semiconductor substrate having a first region and a second region; a first semiconductor mesa formed on the semiconductor substrate within the first region; a second semiconductor mesa formed on the semiconductor substrate within the second region; and a field effect transistor (FET) formed on the semiconductor substrate. The FET includes a first doped feature of a first conductivity type formed in a top portion of the first semiconductor mesa; a second doped feature of a second conductivity type formed in a bottom portion of the first semiconductor mesa, the second semiconductor mesa, and a portion of the semiconductor substrate between the first and second semiconductor mesas; a channel in a middle portion of the first semiconductor mesa and interposed between the source and drain; and a gate formed on sidewall of the first semiconductor mesa.

Abstract: A non-spectral computed tomography scanner includes a radiation source configured to emit x-ray radiation, a detector array configured to detect x-ray radiation and generate non-spectral data, and a memory configured to store a spectral image module that includes computer executable instructions including a neural network trained to produce spectral volumetric image data. The neural network is trained with training spectral volumetric image data and training non-spectral data. The non-spectral computed tomography scanner further includes a processor configured to process the non-spectral data with the trained neural network to produce spectral volumetric image data.

Abstract: A tunneling field-effect transistor (TFET) device is disclosed. A protrusion structure is disposed over the substrate and protrudes out of the plane of substrate. Isolation features are formed on the substrate. A drain region is disposed over the substrate adjacent to the protrusion structure and extends to a bottom portion of the protrusion structure as a raised drain region. A drain contact is disposed over the drain region and overlap with the isolation feature.

Abstract: A device for detecting whether a wafer is present on a clamping jaw and detecting whether the wafer is parallel to a bottom of the clamping jaw. The device for detecting a wafer comprises: a wafer parallel measuring unit arranged in a CMP cleaning and drying device, and used for emitting a parallel measuring laser beam parallel to the bottom of the clamping jaw and receiving the parallel measuring laser beam; a wafer detection unit used for emitting a wafer detecting laser beam to the wafer and receiving the wafer detecting laser beam; and a detection processing unit electrically connected to the wafer parallel measuring unit and the wafer detection unit, and used for determining whether the wafer is present on the clamping jaw and whether the wafer is parallel to the bottom of the clamping jaw according to the received wafer detecting laser beam and parallel measuring laser beam.

Abstract: A projection curtain is provided in the present invention. The projection curtain at least comprises a reflective layer and one of a colored layer, a diffusion layer, and a Fresnel lens layer. The Fresnel lens layer is a spherical Fresnel lens layer or an aspherical Fresnel lens layer. The Fresnel lens layer comprises a plurality of annular protrusions protruding from a plane, the plurality of annular protrusions are arranged in circular bands. A cross-sectional shape of each annular protrusion along a cross section perpendicular to the plane is a triangular shape or a multi-step shape or a free surface shape. The width of one side of each cross-sectional shape parallel to the plane gradually changes, and gradual change of the cross-sectional shape and the width thereof determines light gathering characteristics of the spherical Fresnel lens layer or the aspherical Fresnel lens layer. A surface of each annular protrusion has scattered microstructures.

Abstract: A method of making a semiconductor device includes depositing a TiN layer over a substrate. The method further includes doping a first portion of the TiN layer using an oxygen-containing plasma treatment. The method further includes doping a second portion of the TiN layer using a nitrogen-containing plasma treatment, wherein the second portion of the TiN layer directly contacts the first portion of the TiN layer. The method further includes forming a first metal gate electrode over the first portion of the TiN layer. The method further includes forming a second metal gate electrode over the second portion of the TiN layer, wherein the first metal gate electrode has a different work function from the second metal gate electrode, and the second metal gate electrode directly contacts the first metal gate electrode.

Abstract: The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a semiconductor substrate having a first region and a second region; a first semiconductor mesa formed on the semiconductor substrate within the first region; a second semiconductor mesa formed on the semiconductor substrate within the second region; and a field effect transistor (FET) formed on the semiconductor substrate. The FET includes a first doped feature of a first conductivity type formed in a top portion of the first semiconductor mesa; a second doped feature of a second conductivity type formed in a bottom portion of the first semiconductor mesa, the second semiconductor mesa, and a portion of the semiconductor substrate between the first and second semiconductor mesas; a channel in a middle portion of the first semiconductor mesa and interposed between the source and drain; and a gate formed on sidewall of the first semiconductor mesa.

Abstract: Provided are methods and related devices for implementing disaster recovery. According to a method, in a case where a main Session Management Function (SMF) fails, a backup SMF sends a first request to a User Plane Function (UPF), wherein the first request carries a node identifier (Node ID) of the main SMF, a Node ID of the backup SMF, and a Common Session endpoint Identifier List (CSIDLIST) corresponding to the backup SMF; and the first request is used for notifying the UPF that the main SMF fails and a session or sessions in the CSIDLIST corresponding to the backup SMF is/are to be taken over by the backup SMF, so that the UPF subsequently interacts with the backup SMF for the session or sessions in the CSIDLIST corresponding to the backup SMF.

Abstract: A color filter substrate, a display panel and a display device are provided. The color filter substrate includes: a base substrate; a color conversion layer on the base substrate; a covering layer on a side of the color conversion layer away from the base substrate; and a polarizing layer on a side of the covering layer away from the base substrate. The polarizing layer includes a wire grid polarizer. The covering layer includes a first covering sub-layer and a second covering sub-layer, the first covering sub-layer is located on the side of the color conversion layer away from the base substrate, the second covering sub-layer is located on a side of the first covering sub-layer away from the base substrate, and a material of the first covering sub-layer is different from a material of the second covering sub-layer.