Abstract: The present invention provides a method of dynamic thermal management applied to a portable device, wherein the method includes the steps of: obtaining a surface temperature of the portable device; obtaining a junction temperature of a chip of the portable device; and calculating an upper limit of the junction temperature according to the junction temperature and the surface temperature.

Abstract: A tracker includes a tracking device and a battery device. The tracking device has recesses, fixing holes and conductive points. The battery device has a receiving portion and a body portion integrally coupled to the receiving portion. The receiving portion is provided with a receiving groove and has protrusions, through holes and conductive terminals. The body portion has recesses, fixing holes and conductive points. The tracking device is received in the receiving groove. The recesses, fixing holes and conductive points of the tracking device are respectively corresponding to the protrusions, through holes and conductive terminals of the battery device. The shape of the body portion is the same as that of the tracking device, and the recesses, fixing holes and conductive points of the body portion are disposed at the same position as the tracking device.

Abstract: A smart home includes Internet of things (IOT) devices that are paired with an IOT gateway. A backend system is in communication with the IOT gateway to receive IOT operating data of the IOT devices. The backend system generates a machine learning model for an IOT device. The machine learning model is consulted with IOT operating data of the IOT device to detect anomalous operating behavior of the IOT device. The machine learning model is updated as more and newer IOT operating data of the IOT device are received by the backend system.

Abstract: A semiconductor device and method of forming the same is disclosed. The semiconductor device includes a semiconductor substrate, a first fin and a second fin extending from the semiconductor substrate, a first lower semiconductor feature directly over the first fin, and a second lower semiconductor feature directly over the second fin. Each of the first and second lower semiconductor features includes a top surface bending downward towards the semiconductor substrate. The semiconductor also further includes an upper semiconductor feature directly over and in physical contact with the first and second lower semiconductor features. The semiconductor device further includes a dielectric layer on sidewalls of the first and second lower semiconductor features.

Abstract: An optical switch structure includes a substrate, a first electrical contact, and a first material having a first conductivity type electrically connected to the first electrical contact. The optical switch structure also includes a second material having a second conductivity type coupled to the first material, a second electrical contact electrically connected to the second material, and a waveguide structure disposed between the first electrical contact and the second electrical contact. The waveguide structure includes a waveguide core coupled to the substrate and including a first material characterized by a first index of refraction and a first electro-optic coefficient and a waveguide cladding at least partially surrounding the waveguide core and including a second material characterized by a second index of refraction less than the first index of refraction and a second electro-optic coefficient greater than the first electro-optic coefficient.

Abstract: An overlay mark includes a first feature extending in an X-direction, wherein the first feature is a first distance from a substrate. The overlay mark further includes a second feature extending in a Y-direction perpendicular to the X-direction, wherein the second feature is a second distance from the substrate, and the second distance is different from the first distance. The overlay mark further includes a third feature extending in the X-direction and the Y-direction, wherein the third feature is a third distance from the substrate, and the third distance is different from the first distance and the second distance.

Abstract: The present disclosure is directed to a method for the formation of resistive random-access memory (RRAM) structures with a low profile between or within metallization layers. For example, the method includes forming, on a substrate, a first metallization layer with conductive structures and a first dielectric layer abutting sidewall surfaces of the conductive structures; etching a portion of the first dielectric layer to expose a portion of the sidewall surfaces of the conductive structures; depositing a memory stack on the first metallization layer, the exposed portion of the sidewall surfaces, and a top surface of the conductive structures; patterning the memory stack to form a memory structure that covers the exposed portion of the sidewall surfaces and the top surface of the conductive structures; depositing a second dielectric layer to encapsulate the memory stack; and forming a second metallization layer on the second dielectric layer.

Abstract: A flexible and extensible architecture allows for secure searching across an enterprise. Such an architecture can provide a simple Internet-like search experience to users searching secure content inside (and outside) the enterprise. The architecture allows for the crawling and searching of a variety of sources across an enterprise, regardless of whether any of these sources conform to a conventional user role model. The architecture further allows for security attributes to be received at query time, for example, in order to provide real-time secure access to enterprise resources. The user query also can be transformed to provide for dynamic querying that provides for a more current result list than can be obtained for static queries.

Abstract: The current disclosure describes techniques of protecting a metal interconnect structure from being damaged by subsequent chemical mechanical polishing processes used for forming other metal structures over the metal interconnect structure. The metal interconnect structure is receded to form a recess between the metal interconnect structure and the surrounding dielectric layer. A metal cap structure is formed within the recess. An upper portion of the dielectric layer is strained to include a tensile stress which expands the dielectric layer against the metal cap structure to reduce or eliminate a gap in the interface between the metal cap structure and the dielectric layer.

Abstract: Methods and apparatuses for calibration and control of various engine subsystems using a target value approach. Under the target value approach, the control of each engine subsystem is separated or decoupled to include a set of target values, or a reference value set. A subsystem has a corresponding target determiner, which provides a target value set, or reference value set, in response to a basis variable set and optionally an overall subsystem target. The basis variable set includes parameters selected to robustly characterize the variables that affect the operation of the particular subsystem. The target determiner is optionally calibrated to provide a reference value set within specifications of the subsystem. A physical subsystem controller operates in response to the reference value set.

Abstract: A method of manufacturing a semiconductor device includes forming a first semiconductor layer having a first composition over a semiconductor substrate, and forming a second semiconductor layer having a second composition over the first semiconductor layer. Another first semiconductor layer having the first composition is formed over the second semiconductor layer. A third semiconductor layer having a third composition is formed over the another first semiconductor layer. The first semiconductor layers, second semiconductor layer, and third semiconductor layer are patterned to form a fin structure. A portion of the third semiconductor layer is removed thereby forming a nanowire comprising the second semiconductor layer, and a conductive material is formed surrounding the nanowire. The first semiconductor layers, second semiconductor layer, and third semiconductor layer include different materials.

Abstract: A method for forming a semiconductor device structure is provided. The method includes providing a substrate and an insulating layer over the substrate. The insulating layer has a trench partially exposing the substrate. The method includes forming a gate dielectric layer in the trench. The method includes forming a first metal-containing layer over the gate dielectric layer. The method includes forming a silicon-containing layer over the first metal-containing layer. The method includes forming a second metal-containing layer over the silicon-containing layer. The method includes forming a gate electrode layer in the trench and over the second metal-containing layer.

Abstract: Provided are a novel compound and an organic electronic device using the same. The novel compound is represented by the following Formula (I): wherein n1, n2, m1, m2, m3, and g1 are each independently an integral, and the sum of n1 and n2 is 2 or 3; Ant is L1, L2 and L3 are each independently an arylene group; G1 and G2 are each independently selected from the group consisting of: a hydrogen atom, a deuterium atom, an alkyl group, an alkenyl group, an alkynyl group, a cycloalkyl group, a heterocycloalkyl group, an aryl group, and a heteroaryl group; and R1 and R2 are each independently selected from the group consisting of: a hydrogen atom, a deuterium atom, an alkyl group, and an aryl group.

Abstract: A surface-modified contact lens, having a surface contact angle hysteresis of less than 15°, includes a lens body and a first surface modification layer disposed on a surface of the lens body. The first surface modification layer comprises a first reactive hydrophilic polymer. The surface of the lens body has a first functional group or a second functional group, and the first reactive hydrophilic polymer has a third functional group or a fourth functional group. A first covalent cross-link bond is formed between the surface of the lens body and the first surface modification layer. The first covalent cross-link bond is formed by reacting the first functional group or the second functional group of the surface of the lens body with the third functional group or the fourth functional group of the first reactive hydrophilic polymer.

Abstract: A transfer device for transferring a substrate is provided, including a base plate, at least one suction unit disposed on a side of the base plate to generate suction on the substrate, and a plurality of movement restriction units disposed on the side of the base plate to limit the movement of the substrate during transfer. Each of the movement restriction units includes a main body, an abutting member, and a pusher. The main body is attached to the base plate and has a chamber therein. The abutting member is movably received in the chamber and has an abutting portion that protrudes beyond the main body to abut the substrate. The pusher is received in the chamber and configured to push the abutting member to move toward the substrate.

Abstract: This disclosure concerns a barcode reading system that includes a barcode reader and a data manipulation module. The barcode reader reads a barcode, decodes the barcode, and generates decoded data. The data manipulation module includes a data validation module and a data formatting module. The data validation module can perform one or more data validation operations on the decoded data. The data formatting module is separate from the data validation module. The data formatting module can perform one or more data formatting operations on either an output of the data validation module or on the decoded data. The output of the data validation module may include one or more data validation modifications. The barcode reading system may also include a host computer that is in electronic communication with the barcode reader. In some configurations, the barcode reader may include the data manipulation module. In other configurations, the host computer may include the data manipulation.

Abstract: A package structure includes a first die, a second die, a bridge, an encapsulant and a redistribution layer (RDL) structure. The bridge is arranged side by side with the first die and the second die. The encapsulant laterally encapsulates the first die, the second die and the bridge. The RDL structure is disposed on the first die, the second die, the bridge and the encapsulant. The first die and the second die are electrically connected to each other through the bridge and the RDL structure.

Abstract: A method for generating electric substation load transfer control parameters includes adjusting elements in a fundamental scale matrix according to a condition change of a power grid, wherein the fundamental scale matrix is constructed based on the topology structure of the power grid, and the elements in the fundamental scale matrix represent switch information and risk values of paths between nodes of the power grid, wherein the switch information represents number of switching times required for connecting two nodes of the power grid; and performing operations on the adjusted fundamental scale matrix to generate switch information and risk values of paths for electric substation load transfer control, as electric substation load transfer control parameters.

Abstract: A display device which is not harmful to the human eye in respect of blue light includes a display panel, a backlight module, and a light adjusting component. The backlight module includes white light emitting diodes (LEDs) for emitting light. Each white LED includes a blue light chip and a yellow fluorescent material encapsulated on the blue light chip. Thereby, transmittance of the light adjusting component for blue light having a wavelength less than 450 nm is less than 10% and transmittance of light adjusting component for blue light having a wavelength over 470 nm is not less than 90%. The light adjusting component reduces the emission from the display device of yellow light having a wavelength of about 575 nm to 595 nm.

Abstract: A technique for compressing an original image is disclosed. According to the technique, an original image is obtained and a delta-encoded image is generated based on the original image. Next, a segregated image is generated based on the delta-encoded image and then the segregated image is compressed to produce a compressed image. The segregated image is generated because the segregated image may be compressed more efficiently than the original image and the delta image.