Patents by Inventor Ming

Ming has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11426675
    Abstract: The present disclosure provides processes and systems for heat integration in ethanol production. In one embodiment, a feed mixture is distilled with one or more distillation units to remove at least a portion of the water, and form a distillation unit bottom stream, a vaporous overhead stream, and a fusel oil stream. Molecular sieve units are regenerated by vacuum or a combination of vacuum and optionally a portion of the product stream to form one or more regenerate streams. A feed tank is configured to receive at least one selected from a condensed portion of the regenerate streams and a portion of a vaporous depressure stream, to form a feed stream. The energy contained in the depressure vapor is recovered by the depressure vapor contacting the feed tank and heating up at least one stream forwarded into the feed tank.
    Type: Grant
    Filed: August 3, 2020
    Date of Patent: August 30, 2022
    Assignee: WHITEFOX TECHNOLOGIES LIMITED
    Inventors: Virginia Andrade, Jin Ming Zhou, Stephan Rüdiger Blum
  • Patent number: 11429491
    Abstract: A method, apparatus, and system for storing indexed metadata associated with backed up data is provided. The operations comprising: for each first data item stored at a first client device to be backed up, extracting, at the first client device, an associated first metadata item; transforming, at the first client device, the first metadata item based on a predefined metadata definition; associating, at the first client device, a first client identifier and a backup identifier with the transformed first metadata item; and transferring the transformed first metadata item from the first client device to a metadata bus of a search cluster.
    Type: Grant
    Filed: October 26, 2018
    Date of Patent: August 30, 2022
    Assignee: EMC IP HOLDING COMPANY LLC
    Inventors: Jing Yu, Mengze Liao, Yongsheng Guo, Adam Brenner, Ming Zhang
  • Patent number: 11430385
    Abstract: A pixel compensation circuit including a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a first capacitor, a second capacitor, and an organic light-emitting diode, each of the first transistor to the sixth transistor including a drain, a source and a gate.
    Type: Grant
    Filed: August 2, 2018
    Date of Patent: August 30, 2022
    Assignee: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
    Inventors: Di Geng, Yue Su, Ling Li, Nianduan Lu, Ming Liu
  • Patent number: 11426181
    Abstract: A tool for a bone implant includes a sleeve and a transmission rod including a transmission member disposed on an end of a shaft. Another end of the shaft is located outside of the sleeve. The transmission member is received in the sleeve and includes a first compartment and a plurality of first teeth surrounding the first compartment. A drilling rod includes a second compartment and a plurality of second teeth surrounding the second compartment. A coupling portion is disposed between the second compartment and a bit. The coupling portion is coupled with the sleeve. The bit is located outside of the sleeve. Two magnets are disposed in the first and second compartments, respectively. Two same poles respectively of the two magnets face each other.
    Type: Grant
    Filed: February 2, 2021
    Date of Patent: August 30, 2022
    Assignee: METAL INDUSTRIES RESEARCH & DEVELOPMENT CENTRE
    Inventors: Tung-Lin Tsai, Chun-Chieh Tseng, Yue-Jun Wang, Chun-Ming Chen, Li-Wen Weng, Pei-Hua Wang
  • Patent number: 11430811
    Abstract: A memory device includes a stack of alternating word line layers and insulating layers over a substrate. The word line layers includes a bottom select gate (BSG) positioned over the substrate. The memory device includes first dielectric trenches that are formed in the BSG of the word line layers and extend in the length direction of the substrate to separate the BSG into a plurality of sub-BSGs. The memory device also includes a first common source region (CSR) that is formed over the substrate and extends in the length direction of the substrate. The first CRS further extends through the word line layers and the insulating layers in a height direction of the substrate, where the first CSR is arranged between two adjacent first dielectric trenches of the first dielectric trenches.
    Type: Grant
    Filed: January 21, 2021
    Date of Patent: August 30, 2022
    Assignee: Yangtze Memory Technologies Co., Ltd.
    Inventors: Yali Song, Li Hong Xiao, Ming Wang
  • Patent number: 11432372
    Abstract: A method includes placing a first package component over a vacuum boat, wherein the vacuum boat comprises a hole, and wherein the first package component covers the hole. A second package component is placed over the first package component, wherein solder regions are disposed between the first and the second package components. The hole is vacuumed, wherein the first package component is pressed by a pressure against the vacuum boat, and wherein the pressure is generated by a vacuum in the hole. When the vacuum in the hole is maintained, the solder regions are reflowed to bond the second package component to the first package component.
    Type: Grant
    Filed: October 11, 2019
    Date of Patent: August 30, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ming-Da Cheng, Hsiu-Jen Lin, Cheng-Ting Chen, Wei-Yu Chen, Chien-Wei Lee, Chung-Shi Liu
  • Patent number: 11426793
    Abstract: A method is provided to fabricate a high-power module. A non-touching needle is used to paste a slurry on a heat-dissipation substrate. The slurry comprises nano-silver particles and micron silver particles. The ratio of the two silver particles is 9:1˜1:1. The slurry is pasted on the substrate to be heated up to a temperature kept holding. An integrated chip (IC) is put above the substrate to form a combined piece. A hot presser processes thermocompression to the combined piece to form a thermal-interface-material (TIM) layer with the IC and the substrate. After heat treatment, the TIM contains more than 99 percent of pure silver with only a small amount of organic matter. No volatile organic compounds would be generated after a long term of use. No intermetallic compounds would be generated while the stability under high temperature is obtained. Consequently, embrittlement owing to procedure temperature is dismissed.
    Type: Grant
    Filed: December 3, 2018
    Date of Patent: August 30, 2022
    Assignee: National Cheng Kung University
    Inventors: In-Gann Chen, Hung-Cheng Chen, Chia-Ming Yang, Steve Lien-Chung Hsu, Chang-Shu Kuo
  • Patent number: 11426669
    Abstract: The present disclosure relates to a method of manufacturing a model car body, including preparing a steel mold comprising a core plate with an inner core, a top plate and at least two side plates; attaching at least one pre-fabricated plastic block to a side of the inner core of the core plate; combining the core plate, the top plate and the at least two side plates with each other, wherein a cavity is formed among the top plate, the side plates, the inner core of the core plate and the at least one pre-fabricated plastic block; injecting melted plastic material into the cavity, wherein the melted plastic material is filled with the cavity and the at least one pre-fabricated plastic block is encased by the melted plastic material; solidifying the melted plastic so as to form the model car body, wherein the at least one pre-fabricated plastic block is integrated with the plastic model car body; separating the core plate, the top plate and the at least two side plates from each other; and releasing the model ca
    Type: Grant
    Filed: January 8, 2019
    Date of Patent: August 30, 2022
    Assignees: GATEWAY AUTOART LIMITED, GATEWAY AUTOART JAPAN CORPORATION
    Inventor: Kelvin Yuet-Ming Kwan
  • Patent number: 11428250
    Abstract: An electronic device includes a chassis housing one or more electronic components, a module configured to be inserted into a channel defined by the chassis, and an alignment mechanism disposed in the channel. The alignment mechanism has a body portion that defines an aperture. When the module is initially inserted into the channel in a first orientation, a first portion of the module passes over the aperture and compresses the body portion of the alignment mechanism along a first axis, to allow the module to be fully inserted into the channel. When the module is initially inserted into the channel in a second orientation, a second portion of the module passes through the aperture and does not compress the body portion of the alignment mechanism along the first axis, to prevent the module from being fully inserted into the channel.
    Type: Grant
    Filed: January 9, 2020
    Date of Patent: August 30, 2022
    Assignee: QUANTA COMPUTER INC.
    Inventors: Yaw-Tzorng Tsorng, Hung-Wei Chen, Chun Chang, Ming-Lung Wang
  • Patent number: 11427544
    Abstract: Disclosed is hydroxamic acid compounds of Formula (I) set forth herein. Also disclosed are a pharmaceutical composition containing such a compound and a method of using the compound for treating a condition associated with histone deacetylase 6.
    Type: Grant
    Filed: May 16, 2017
    Date of Patent: August 30, 2022
    Assignees: TAIPEI MEDICAL UNIVERSITY, NATIONAL TAIWAN UNIVERSITY
    Inventors: Che-Ming Teng, Jing-Ping Liou, Shiow-Lin Pan, Chia-Ron Yang
  • Patent number: 11427412
    Abstract: A robot control unit for a substrate conveying robot raises a hand from a first lower position below a first target position at which the hand picks up a substrate to a first upper position above the first target position, and displaces at least one of a plurality of joints in one direction, in a first interval from the first lower position to a first intermediate position between the first lower position and the first target position.
    Type: Grant
    Filed: May 9, 2019
    Date of Patent: August 30, 2022
    Assignees: KAWASAKI JUKOGYO KABUSHIKI KAISHA, KAWASAKI ROBOTICS (USA), INC.
    Inventors: Masaya Yoshida, Avish Ashok Bharwani, Ming Zeng, Brandon Lee, Ryan Le
  • Patent number: 11431320
    Abstract: An even-mode resonator filter is disclosed. The even-mode resonator filter is provided with high stability, and comprises: a first even-mode resonance module, a second even-mode resonance module, a first filter unit and a second filter unit. In the present invention, the first even-mode resonance module comprises a first resonance unit and a second resonance unit, and the second even-mode resonance module comprises a third resonance unit and a fourth resonance unit. By letting the second resonance unit be coupled to the first resonance unit as well as making the third resonance unit be coupled to the fourth resonance unit, the even-mode resonator filter of the present invention has the advantage of eliminating unexpected resonance.
    Type: Grant
    Filed: March 16, 2021
    Date of Patent: August 30, 2022
    Assignee: ADVANCED CERAMIC X CORPORATION
    Inventors: Jyh-Wen Sheen, Chih-Ming Chang
  • Patent number: 11430700
    Abstract: The present disclosure describes a semiconductor device having metal boundary trench isolation with electrically conductive intermediate structures acting as a metal diffusion barrier. The semiconductor structure includes a first fin structure and a second fin structure on a substrate, an insulating layer between the first and second fin structures, a gate dielectric layer on the insulating layer and the first and second fin structures, and a first work function stack and a second work function stack on the gate dielectric layer. The first work function stack is over the first fin structure and a first portion of the insulating layer, and the second work function stack is over the second fin structure and a second portion of the insulating layer adjacent to the first portion. The semiconductor structure further includes a conductive intermediate structure on the gate dielectric layer and between the first and second work function stacks.
    Type: Grant
    Filed: June 26, 2020
    Date of Patent: August 30, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chandrashekhar Prakash Savant, Chia-Ming Tsai, Yuh-Ta Fan, Tien-Wei Yu
  • Patent number: 11430956
    Abstract: The present disclosure relates to a resistive random access memory (RRAM) device architecture, that includes a thin single layer of a conductive etch-stop layer between a lower metal interconnect and a bottom electrode of an RRAM cell. The conductive etch-stop layer provides simplicity in structure and the etch-selectivity of this layer provides protection to the underlying layers. The conductive etch stop layer can be etched using a dry or wet etch to land on the lower metal interconnect. In instances where the lower metal interconnect is copper, etching the conductive etch stop layer to expose the copper does not produce as much non-volatile copper etching by-products as in traditional methods. Compared to traditional methods, some embodiments of the disclosed techniques reduce the number of mask step and also reduce chemical mechanical polishing during the formation of the bottom electrode.
    Type: Grant
    Filed: September 21, 2019
    Date of Patent: August 30, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ming Chyi Liu, Yuan-Tai Tseng, Chern-Yow Hsu, Shih-Chang Liu, Chia-Shiung Tsai
  • Patent number: 11432370
    Abstract: A device-to-device (D2D) communication method includes: performing, by a terminal device using a same packet data convergence protocol (PDCP) entity, D2D communication in a long term evolution (LTE) standard and a new radio (NR) standard.
    Type: Grant
    Filed: January 7, 2021
    Date of Patent: August 30, 2022
    Assignee: GUANGDONG OPPO MOBILE TELECOMMUNICATIONS CORP., LTD.
    Inventors: Qianxi Lu, Huei-Ming Lin
  • Patent number: 11429073
    Abstract: To allow more daylighting and protect against direct solar radiation, the system may include a window shading system that impacts an area (or area of interest). The system may adjust different window shades in different ways and for different periods of time to protect against a direct solar radiation onto an area of interest. The system may provide targeted shadows onto the area of interest. The system may also analyze or predict angles of solar rays that comprise the direct solar radiation and determine an impact of the solar rays on the area of interest, wherein the adjusting of window shades is based on the determining.
    Type: Grant
    Filed: December 7, 2018
    Date of Patent: August 30, 2022
    Assignee: MECHOSHADE SYSTEMS, LLC
    Inventors: Joel Berman, Alex Greenspan, Xi Ming Liarno
  • Patent number: 11430095
    Abstract: Different candidate image data feature types are evaluated to identify one or more specific image data feature types to be used in training a prediction model for optimizing one or more image metadata parameters. A plurality of image data features of the one or more selected image data feature types is extracted from one or more images. The plurality of image data features of the one or more selected image data feature types is reduced into a plurality of significant image data features. A total number of image data features in the plurality of significant image data features is no larger than a total number of image data features in the plurality of image data features of the one or more selected image data feature types. The plurality of significant image data features is applied to training the prediction model for optimizing one or more image metadata parameters.
    Type: Grant
    Filed: September 18, 2019
    Date of Patent: August 30, 2022
    Assignee: DOLBY LABORATORIES LICENSING CORPORATION
    Inventors: Harshad Kadu, Guan-Ming Su
  • Patent number: 11428758
    Abstract: A tunneling magnetoresistance (TMR) sensor device is disclosed that includes one or more TMR resistors. The TMR sensor device comprises a first TMR resistor comprising a first TMR film, a second TMR resistor comprising a second TMR film different than the first TMR film, a third TMR resistor comprising the second TMR film, and a fourth TMR resistor comprising the first TMR film. The first and fourth TMR resistors are disposed in a first plane while the second and third TMR resistors are disposed in a second plane different than the first plane. The first TMR film comprises a synthetic anti-ferromagnetic pinned layer having a magnetization direction of a reference layer orthogonal to a magnetization direction a free layer. The second TMR film comprises a double synthetic anti-ferromagnetic pinned layer having a magnetization direction of a reference layer orthogonal to a magnetization direction of a free layer.
    Type: Grant
    Filed: December 18, 2019
    Date of Patent: August 30, 2022
    Assignee: Western Digital Technologies, Inc.
    Inventors: Chih-Ching Hu, Yung-Hung Wang, Ming Mao, Daniele Mauri, Ming Jiang
  • Patent number: 11427623
    Abstract: Therapeutic regimens and uses of mutant Fibroblast Growth Factor-21 (FGF-21) peptide conjugates comprising a polyethylene glycol (PEG) moiety attached to a mutant FGF-21 peptide via a glycosyl moiety thereof in the treatment of nonalcoholic steatohepatitis are provided.
    Type: Grant
    Filed: May 28, 2020
    Date of Patent: August 30, 2022
    Assignee: 89BIO LTD.
    Inventors: Hank Mansbach, Chih-Ming Tseng
  • Patent number: 11430816
    Abstract: The present disclosure provides a method for preparing an interlayer insulating layer and a method for manufacturing a thin film transistor, and a thin film transistor, belongs to the field of display technology, and can solve the problem of poor resistance to breakdown of the interlayer insulating layer in the related art. The method for preparing an interlayer insulating layer includes the following steps: forming a silicon oxide layer with a first reaction gas and forming a silicon nitride layer with a second reaction gas such that hydrogen content in the silicon nitride layer is less than or equal to hydrogen content in the silicon oxide layer.
    Type: Grant
    Filed: April 30, 2020
    Date of Patent: August 30, 2022
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Ming Wang, Ce Zhao, Wei Song