Abstract: This disclosure provides a light-emitting device comprising a semiconductor laminate. The semiconductor laminate includes an n-type semiconductor layer, a p-type semiconductor layer disposed on the n-type semiconductor layer, and an active layer disposed between the n-type and p-type semiconductor layers. The active layer has a first surface proximate to the n-type semiconductor layer and a second surface proximate to the p-type semiconductor layer. The p-type semiconductor layer has a third surface proximate to and a fourth surface distal to the n-type semiconductor layer. The semiconductor laminate further includes hydrogen impurities with a concentration distribution along a thickness direction from the n-type to the p-type semiconductor layers. The concentration distribution has a first peak value at a first location proximate to a second peak value at a second location distal to the active layer. The second peak value is greater than the first peak value.

Abstract: This disclosure provides a light-emitting device comprising a semiconductor laminate. The semiconductor laminate includes an n-type semiconductor layer, a p-type semiconductor layer disposed on the n-type semiconductor layer, and an active layer disposed between the n-type and p-type semiconductor layers. The active layer has a first surface proximate to the n-type semiconductor layer and a second surface proximate to the p-type semiconductor layer. The p-type semiconductor layer has a third surface proximate to and a fourth surface distal to the n-type semiconductor layer. The semiconductor laminate further includes hydrogen impurities with a concentration distribution along a thickness direction from the n-type to the p-type semiconductor layers. The concentration distribution has a first peak value at a first location proximate to a second peak value at a second location distal to the active layer. The second peak value is greater than the first peak value.

Abstract: A light emitting diode includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, a light emitting layer, and a stress relief layer. The second conductivity-type semiconductor layer has a conductivity type opposite to that of the first conductivity-type semiconductor layer. The light emitting layer is disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. The stress relief layer is disposed between the first conductivity-type semiconductor layer and the light emitting layer, and includes well layers and barrier layers stacked alternately. The stress relief layer further includes at least one blocking zone in at least one of the well layers. The at least one blocking zone has an energy gap greater than an energy gap of the at least one of the well layers. A method for manufacturing the light emitting diode is also disclosed.