Abstract: A method for manufacturing a planar optical waveguide device including a core of which a top face is provided with a groove section filled with a groove section filler made of a low refractive index material having a refractive index lower than that of the core, the method including; a first high refractive index material layer forming step of forming a high refractive index material layer; a low refractive index material layer forming step of forming a low refractive index material layer made of the low refractive index material on the high refractive index material layer; a groove section filler forming step of forming the groove section filler by trimming both lateral portions of the low refractive index material layer; and a second high refractive index material layer forming step of forming a high refractive index material layer so as to fill the both sides of the lateral portions of the groove section filler.

Abstract: According to embodiments of the present invention, a light emitting device is provided. The light emitting device includes: an active region comprising at least one p-i-n junction, the at least one p-i-n junction comprising a p-doped region, an intrinsic region and an n-doped region; a first contact; and a second contact, wherein the active region is disposed between the first contact and the second contact; and wherein a voltage applied to the first contact and the second contact produces a current configured to flow between the first contact and the second contact in a direction substantially parallel to a surface of the intrinsic region of the active region configured to emit a light. According to embodiments of the present invention, the intrinsic region includes a multiple quantum well (MQW) such that a current injected flows laterally in a direction substantially parallel to the surface of the wells of the MQW.

Abstract: An electro-optic device is disclosed. The electro-optic device includes an insulating layer, a first semiconducting region disposed above the insulating layer and being doped with doping atoms of a first conductivity type, a second semiconducting region disposed above the insulating layer and being doped with doping atoms of a second conductivity type and an electro-optic active region disposed above the insulating layer and between the first semiconducting region and the second semiconducting region.

Abstract: According to an embodiment, a photodetector is provided, including a detector region, a first contact region forming an interface with the detector region, and a first valence mending adsorbate region between the first contact region and the detector region.

Abstract: A method for manufacturing a planar optical waveguide device of which a core includes a plurality of alternatively arranged fin portions and valley portions to form a grating structure, in which the core widths of the valley portions vary along the longitudinal direction, the method including: a high refractive index material layer forming step of forming a high refractive index material layer; a photoresist layer forming step of forming a photoresist layer on the high refractive index material layer; a first exposure step of forming shaded portions on the photoresist layer using a phase-shifting photomask; a second exposure step of forming shaded portions on the photoresist layer using a binary photomask; a development step of developing the photoresist layer; and an etching step of etching the high refractive index material layer using the photoresist pattern resulted from the development step.

Abstract: A method for manufacturing a planar optical waveguide device including a core of which a top face is provided with a groove section filled with a groove section filler made of a low refractive index material having a refractive index lower than that of the core, the method including; a first high refractive index material layer forming step of forming a high refractive index material layer; a low refractive index material layer forming step of forming a low refractive index material layer made of the low refractive index material on the high refractive index material layer; a groove section filler forming step of forming the groove section filler by trimming both lateral portions of the low refractive index material layer; and a second high refractive index material layer forming step of forming a high refractive index material layer so as to fill the both sides of the lateral portions of the groove section filler.

Abstract: A memory cell is provided. The memory cell comprises a first wire shaped channel structure; and a charge trapping structure surrounding the perimeter surface of the first wire shaped channel structure, the charge trapping structure comprising two charge trapping partial to structures, wherein each charge trapping partial structure is formed of a different material capable of storing electrical charges. Methods of manufacturing the memory cell are also provided.

Abstract: A method of forming a photonic crystal (PhC) structure and a PhC structure formed by such method. The method comprises forming holes in a Si-based host layer; filling the holes with a high-density plasma (HDP) deposited Si-based oxide and such that a surface of the Si-based host layer is directly covered with the Si-based oxide; performing at least a selective wet etching step for etching the Si-based oxide such that a surface of the resulting PhC structure is planarized.

Abstract: The wafer arrangement (100) provided comprises a first wafer (101), which comprises an integrated circuit and a recess (105). The wafer arrangement further comprises a portion of a second wafer (103), which comprises a carrier portion and a protrusion (107), the protrusion comprising an active component or actively controlled component (109) such as a MEMS component, wherein the portion of the second wafer (103) is coupled to the first wafer (101) such that the protrusion (107) is received in the recess (105). The invention provides a mechanism for accurately aligning an active component (109) on the second wafer (103) with components on the first wafer (101), such as photonic, electronic or optical components.