Abstract: The present disclosure provides a high-order rotational symmetry unit-based nonlinear geometric phase metasurface, which sequentially comprises from the bottom to the top: a substrate (1); a nonlinear material layer (2); and a metasurface structure layer (3), comprising multiple super-configuration units (4) having local high-order rotational symmetry, wherein the super-configuration units (4) are periodically arranged to form a lattice structure which has global high-order rotational symmetry. Under the pumping of fundamental waves in a circular polarization state, the nonlinear geometric phase metasurface can simultaneously generate nonlinear harmonic waves having the same and opposite circular polarization states as the fundamental waves, and a nonlinear geometric phase of the generated nonlinear harmonic waves is regulated and controlled by a local rotational symmetry order and lattice structure of the super-configuration units.

Abstract: The present disclosure provides a high-order rotational symmetry unit-based nonlinear geometric phase metasurface, which sequentially comprises from the bottom to the top: a substrate (1); a nonlinear material layer (2); and a metasurface structure layer (3), comprising multiple super-configuration units (4) having local high-order rotational symmetry, wherein the super-configuration units (4) are periodically arranged to form a lattice structure which has global high-order rotational symmetry. Under the pumping of fundamental waves in a circular polarization state, the nonlinear geometric phase metasurface can simultaneously generate nonlinear harmonic waves having the same and opposite circular polarization states as the fundamental waves, and a nonlinear geometric phase of the generated nonlinear harmonic waves is regulated and controlled by a local rotational symmetry order and lattice structure of the super-configuration units.

Abstract: A metasurface-based imaging system, a design method, and a detector. In an optical axis direction, the metasurface-based imaging system sequentially comprises: a quadratic-phase-based metasurface structure, consisting of a sub-wavelength unit structure array (1) and a substrate (2), the metasurface structure being a monolayer structure and used for implementing preset phase distribution; and a wavevector filter (3), each position of which is equivalent to one aperture stop, the wavevector filter having a filtering function and having different wavevector modulation effects under different incident angles. The metasurface-based imaging system has the advantages of being ultra-light, ultra-thin, and high in imaging quality, and can achieve large-area, ultra-thin, and large field-of-view imaging detection.

Abstract: The present disclosure relates to a field of dry etching technology. The present disclosure provides an ultra-large area scanning reactive ion etching machine and an etching method thereof. The ultra-large area scanning reactive ion etching machine includes: an injection chamber, an etching reaction chamber, a transition chamber, and an etching ion generation chamber. By moving a sample holder among the injection chamber, the etching reaction chamber and the transition chamber in a scanning direction, a scanning etching is performed on a sample placed on the sample holder, which may realize a large-area, uniform and efficient etching.

Abstract: An ultra-wide angle broadband polarization imaging system based on a metasurface, and a detection apparatus, the imaging system comprising a first lens (L1) having negative optical power, a linear polarizer (P1), a quarter wave plate (P2), a diaphragm (STO), a second lens (L2) having positive optical power, a third lens (L3) having positive optical power, and the metasurface (M), wherein an object side surface and an image side surface of the lens are planar or spherical; and the phase distribution required for the system in a broadband spectrum band is achieved by setting different rotation angles ? of a unit structure of the metasurface.

Abstract: An ultra-wide angle broadband polarization imaging system based on a metasurface, and a detection apparatus, the imaging system comprising a first lens (L1) having negative optical power, a linear polarizer (P1), a quarter wave plate (P2), a diaphragm (STO), a second lens (L2) having positive optical power, a third lens (L3) having positive optical power, and the metasurface (M), wherein an object side surface and an image side surface of the lens are planar or spherical; and the phase distribution required for the system in a broadband spectrum band is achieved by setting different rotation angles ? of a unit structure of the metasurface.

Abstract: A mask topology optimization method for surface plasmon near-field photolithography, including: acquiring first mask data and performing fuzzy processing and projection processing on same to obtain second mask data; performing forward calculation according to the second mask data and a preset surface plasmon near-field photolithography condition to obtain imaging data and forward field data; calculating an imaging error between the imaging data and expected imaging data; performing adjoint calculation on the second mask data to obtain adjoint field data; calculating a gradient matrix of the imaging error relative to the first mask data according to the forward field data and the adjoint field data; and updating the first mask data according to the gradient matrix, repeating the steps for iteration calculation until the optimized mask data is obtained, and outputting a final mask pattern.

Abstract: Provided is an near-field lithography immersion system, including: an immersion unit including: a liquid flow channel and a gas flow channel configured to apply gas to confine an immersion liquid provided by the liquid flow channel into an exposure field; at least two interface modules, the interface module includes a gas connector, a liquid connector and a brake connector, the gas connector and the liquid connector are correspondingly connected to the gas flow channel and the liquid flow channel, respectively, the brake connector is configured to control an assembly and a disassembly of the immersion unit, and the interface module is detachably connected to the immersion unit; and a mask loading module including a mask base plate and a mask, the immersion liquid is guided to an edge of the mask from below the mask base plate to form an immersion field between the mask and a substrate.

Abstract: Provided is an near-field lithography immersion system, including: an immersion unit including: a liquid flow channel and a gas flow channel configured to apply gas to confine an immersion liquid provided by the liquid flow channel into an exposure field; at least two interface modules, the interface module includes a gas connector, a liquid connector and a brake connector, the gas connector and the liquid connector are correspondingly connected to the gas flow channel and the liquid flow channel, respectively, the brake connector is configured to control an assembly and a disassembly of the immersion unit, and the interface module is detachably connected to the immersion unit; and a mask loading module including a mask base plate and a mask, the immersion liquid is guided to an edge of the mask from below the mask base plate to form an immersion field between the mask and a substrate.

Abstract: The present disclosure provides a mask topology optimization method for surface plasmon near-field photolithography, comprising: acquiring first mask data and performing fuzzy processing and projection processing on same to obtain second mask data; performing forward calculation according to the second mask data and a preset surface plasmon near-field photolithography condition to obtain imaging data and forward field data; calculating an imaging error between the imaging data and expected imaging data; performing adjoint calculation on the second mask data to obtain adjoint field data; calculating a gradient matrix of the imaging error relative to the first mask data according to the forward field data and the adjoint field data; and updating the first mask data according to the gradient matrix, repeating the steps for iteration calculation until the optimized mask data is obtained, and outputting a final mask pattern.

Abstract: Provided is a multifunctional lithography device, including: a vacuum substrate-carrying stage configured to place a substrate and adsorb the substrate on the vacuum substrate-carrying stage by controlling an airflow, so as to control a gap between the substrate and the mask plate; a mask frame arranged above the vacuum substrate-carrying stage and configured to fix the mask plate; a substrate-carrying stage motion system arranged below the vacuum substrate-carrying stage and configured to adjust a position of the vacuum substrate-carrying stage, so that a distance between the substrate and the mask plate satisfies a preset condition; an ultraviolet light source system arranged above the mask plate and configured to generate an ultraviolet light for lithography; and a three-axis alignment optical path system configured to align the ultraviolet light with the mask plate.

Abstract: The present disclosure provides a visible light-transparent and radiative-cooling multilayer film, including N layers of films which have different thicknesses and are arranged alternately. The visible light-transparent and radiative-cooling multilayer film adopts a new film layer arrangement, so that the multilayer film has an extremely high visible light transmittance while achieving radiative cooling. Among others, the multilayer film is composed of two materials having high visible light-transmittance. Since there is a difference between dielectric constants of the two materials, a resonant cavity or resonant cavities may be formed among material layers. The resonant cavity may enhance the electric field therein, thereby increasing the radiance of the structure greatly. The present disclosure has the advantages of simple structure, easy to process, good cooling effect, high visible light transmittance and low cost.

Abstract: A method for etching a curved substrate is provided, including: forming a conductive thin film layer with an etched pattern on the curved substrate; supplying power to the conductive thin film layer such that the conductive thin film layer has an equal potential at each position of the conductive thin film layer; etching each position of the curved substrate to an etching depth corresponding to the potential at each position of the conductive thin film layer based on the etched pattern of the conductive thin film layer, so as to obtain the curved substrate having a consistent etching depth at each position of the curved substrate. With the etching method, it is possible to etch an arbitrary curved surface to obtain a microstructure with a uniform processing depth.

Abstract: Provided is an intelligent correction device control system for a super-resolution lithography precision mask, including: a sixteen-way pneumatic fine-tuning mask deformation control subsystem configured to deform a mask, detect a force value of a mask deformation, compare the force value of the mask deformation with an output force set value, and generate a first control feedback quantity to adjust a force deforming the mask, so as to control a deformation quantity of the mask; and an alignment subsystem configured to acquire images of the mask and a substrate, and adjust a position between the mask and the substrate according to the images, so as to align the mask with the substrate.

Abstract: Provided is a method of fabricating a micro-nano structure, including: forming a reflective layer and a fluid polymer layer sequentially on a surface of a substrate; pressurizing the substrate and a mask having a micro-nano pattern to attach to each other, squeezing the fluid polymer layer into a light-transmission area of the mask, and curing the fluid polymer layer; and exposing, wherein a fluid polymer in the light-transmission area is configured to sense light under a combined effect of a transmitted light and a light reflected by the reflective layer, such that a micro-nano structure is obtained. The method solves the problem of limited diffraction, improves the processing resolution by reducing the transmission loss of evanescent waves through reflective light field enhancement, and reduces the difficulty and cost of mask processing and pattern defects by using shallow pressurizing in combination with exposure.

Abstract: A method for etching a curved substrate is provided, including: forming a conductive thin film layer with an etched pattern on the curved substrate; supplying power to the conductive thin film layer such that the conductive thin film layer has an equal potential at each position of the conductive thin film layer; etching each position of the curved substrate to an etching depth corresponding to the potential at each position of the conductive thin film layer based on the etched pattern of the conductive thin film layer, so as to obtain the curved substrate having a consistent etching depth at each position of the curved substrate. With the etching method, it is possible to etch an arbitrary curved surface to obtain a microstructure with a uniform processing depth.

Abstract: Provided is a method of fabricating a micro-nano structure, including: forming a reflective layer and a fluid polymer layer sequentially on a surface of a substrate; pressurizing the substrate and a mask having a micro-nano pattern to attach to each other, squeezing the fluid polymer layer into a light-transmission area of the mask, and curing the fluid polymer layer; and exposing, wherein a fluid polymer in the light-transmission area is configured to sense light under a combined effect of a transmitted light and a light reflected by the reflective layer, such that a micro-nano structure is obtained. The method solves the problem of limited diffraction, improves the processing resolution by reducing the transmission loss of evanescent waves through reflective light field enhancement, and reduces the difficulty and cost of mask processing and pattern defects by using shallow pressurizing in combination with exposure.

Abstract: Provided is a multifunctional lithography device, including: a vacuum substrate-carrying stage configured to place a substrate and adsorb the substrate on the vacuum substrate-carrying stage by controlling an airflow, so as to control a gap between the substrate and the mask plate; a mask frame arranged above the vacuum substrate-carrying stage and configured to fix the mask plate; a substrate-carrying stage motion system arranged below the vacuum substrate-carrying stage and configured to adjust a position of the vacuum substrate-carrying stage, so that a distance between the substrate and the mask plate satisfies a preset condition; an ultraviolet light source system arranged above the mask plate and configured to generate an ultraviolet light for lithography; and a three-axis alignment optical path system configured to align the ultraviolet light with the mask plate.

Abstract: Provided is an intelligent correction device control system for a super-resolution lithography precision mask, including: a sixteen-way pneumatic fine-tuning mask deformation control subsystem configured to deform a mask, detect a force value of a mask deformation, compare the force value of the mask deformation with an output force set value, and generate a first control feedback quantity to adjust a force deforming the mask, so as to control a deformation quantity of the mask; and an alignment subsystem configured to acquire images of the mask and a substrate, and adjust a position between the mask and the substrate according to the images, so as to align the mask with the substrate.

Abstract: The present disclosure provides a sub-wavelength structural material having compatibility of low detectability for infrared, laser, and microwave, which includes, from top to bottom, a metal type frequency selective surface layer I, a dielectric layer I, a metal type frequency selective surface layer II, a dielectric layer II, a resistive film, a dielectric layer III. Each of the metal type frequency selective surface layers is a sub-wavelength patch type array, and metal used by the metal type frequency selective surface layers has a characteristic of low infrared emissivity. The present disclosure modulates a phase by using a phase difference generated by patches with different sizes on the metal type frequency selective surface layer I, so as to control backscattering of incident electromagnetic waves to achieve compatibility of low detectability for laser and infrared, while the bottom three layers achieve absorption of microwave.