Abstract: A method for forming an indium gallium nitride quantum well structure is disclosed. The method includes forming a gallium nitride microdisk on a substrate, with the gallium nitride microdisk having an inverted pyramid form and an end face; and forming multiple quantum well layers on the end face, with each quantum well layer including an indium gallium nitride quantum well and a barrier layer. The indium gallium nitride quantum well is grown at a growth temperature adjusted using a trend equation within a temperature range of 480° C. to 810° C.

Abstract: A digital picture frame having a scanning function comprises a digital picture frame, a scanning module, and a universal supporting member, wherein the universal supporting member further comprises a fixing seat, a ball, a friction unit and a support. The fixing seat is a spherical cavity formed in the digital picture frame for receiving the ball therein. The ball has a through hole penetrating a center of the ball. The friction unit is provided between the fixing seat and the ball.