Patents by Inventor Mingchao GAO

Mingchao GAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • IGBT DEVICE BACKSIDE STRUCTURE AND PREPARATION METHOD THEREFOR, AND IGBT DEVICE
    Publication number: 20230077959
    Abstract: Provided in the present disclosure are an IGBT device backside structure and a preparation method therefor, and an IGBT device, the IGBT device backside structure comprising a buffer layer, the buffer layer comprising a first activation efficiency buffer area corresponding to an active area of the IGBT device and a second activation efficiency buffer area corresponding to a terminal area of the IGBT device, the activation efficiency of the first activation efficiency buffer area being less than the activation efficiency of the second activation efficiency buffer area.
    Type: Application
    Filed: June 15, 2021
    Publication date: March 16, 2023
    Applicants: STATE GRID SMART GRID RESEARCH INSTITUTE CO., LTD., STATE GRID SHANXI ELECTRIC POWER RESEARCH INSTITUTE, STATE GRID CORPORATION OF CHINA
    Inventors: Li LI, Rui JIN, Yaohua WANG, Shaohua DONG, Jiang LIU, Mingchao GAO, Junmin WU, Lu BAI, Guanliang LI