Patents by Inventor Mingcheng Zong

Mingcheng Zong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10553393
    Abstract: Methods and apparatuses for laser-assisted electron-beam inspection (EBI) are provided. The apparatus includes an EBI device and a laser illumination device. The EBI device includes an e-beam source configured to emit an incident e-beam, a deflector configured to deflect the incident e-beam to be projected onto a surface of a semiconductor device, and an electron detector configured to detect emergent electrons generated by the incident e-beam projected onto the surface. The laser illumination device includes a laser source configured to generate a laser, and a guiding device configured to guide the laser to be projected onto the semiconductor device. The laser changes the emergent electrons to cause, in a positive mode of the EBI apparatus, a PN junction of an NMOS of the semiconductor device to be in a conduction state.
    Type: Grant
    Filed: August 27, 2018
    Date of Patent: February 4, 2020
    Assignee: Zhongke Jingyuan Electron Limited
    Inventors: Shiguang Li, Jie Guo, Mingcheng Zong
  • Publication number: 20190333733
    Abstract: Methods and apparatuses for laser-assisted electron-beam inspection (EBI) are provided. The apparatus includes an EBI device and a laser illumination device. The EBI device includes an e-beam source configured to emit an incident e-beam, a deflector configured to deflect the incident e-beam to be projected onto a surface of a semiconductor device, and an electron detector configured to detect emergent electrons generated by the incident e-beam projected onto the surface. The laser illumination device includes a laser source configured to generate a laser, and a guiding device configured to guide the laser to be projected onto the semiconductor device. The laser changes the emergent electrons to cause, in a positive mode of the EBI apparatus, a PN junction of an NMOS of the semiconductor device to be in a conduction state.
    Type: Application
    Filed: August 27, 2018
    Publication date: October 31, 2019
    Inventors: Shiguang Li, Yan Zhao, Jie Guo, Mingcheng Zong
  • Patent number: 6924884
    Abstract: In an off-axis leveling procedure a height map of a mask is generated at a measurement station. The height map is referenced to a physical reference surface of a mask support. The physical reference surface may be a surface in which is inset a transmission image sensor. At the exposure station the height of the physical reference surface is measured and related to the focal plane of the projection lens. The height map can then be used to determine the optimum height and/or tilt of the mask support to position the exposure area on the mask in best focus during exposure.
    Type: Grant
    Filed: October 14, 2003
    Date of Patent: August 2, 2005
    Assignee: ASML Netherlands B.V.
    Inventors: Marcus Emile Joannes Boonman, Petrus Johannes Maria Broodbakker, Gerrit Johannes Nijmeijer, Mingcheng Zong, Jozef Cornelus Antonius Roijers
  • Publication number: 20040130691
    Abstract: In an off-axis leveling procedure a height map of a mask is generated at a measurement station. The height map is referenced to a physical reference surface of a mask support. The physical reference surface may be a surface in which is inset a transmission image sensor. At the exposure station the height of the physical reference surface is measured and related to the focal plane of the projection lens. The height map can then be used to determine the optimum height and/or tilt of the mask support to position the exposure area on the mask in best focus during exposure.
    Type: Application
    Filed: October 14, 2003
    Publication date: July 8, 2004
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Marcus Emile Joannes Boonman, Petrus Johannes Maria Broodbakker, Gerrit Johannes Nijmeijer, Mingcheng Zong, Jozef Cornelus Antonius Roijers