Patents by Inventor MingChi Mitch Liu

MingChi Mitch Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • BIT LINE PRE-SETTLEMENT CIRCUIT AND METHOD FOR FLASH MEMORY SENSING SCHEME
    Publication number: 20080144393
    Abstract: A flash memory array includes a reference bit line on which a reference current is imposed. During read operation, bit lines selected for reading are connected to current-to-voltage converters, each of which generates an output voltage based upon the input current flowing in the bit line. The output voltage of the current-to-voltage converter is compared to a reference voltage derived from the output of a reference current-to-voltage converter whose input is driven by a reference current on a reference bit line. Any cell that conducts more current than the reference current will be regarded as an erased cell. Conversely, any cell that conducts less current than the reference current will be regarded as a programmed cell.
    Type: Application
    Filed: February 26, 2008
    Publication date: June 19, 2008
    Applicant: ACTEL CORPORATION
    Inventors: Poongyeub Lee, MingChi Mitch Liu
  • Bit line pre-settlement circuit and method for flash memory sensing scheme
    Patent number: 7342832
    Abstract: A flash memory array includes a reference bit line on which a reference current is imposed. During read operation, bit lines selected for reading are connected to current-to-voltage converters, each of which generates an output voltage based upon the input current flowing in the bit line. The output voltage of the current-to-voltage converter is compared to a reference voltage derived from the output of a reference current-to-voltage converter whose input is driven by a reference current on a reference bit line. Any cell that conducts more current than the reference current will be regarded as an erased cell. Conversely, any cell that conducts less current than the reference current will be regarded as a programmed cell.
    Type: Grant
    Filed: November 16, 2005
    Date of Patent: March 11, 2008
    Assignee: Actel Corporation
    Inventors: Poongyeub Lee, MingChi Mitch Liu
  • Bit line pre-settlement circuit and method for flash memory sensing scheme
    Publication number: 20070109157
    Abstract: A flash memory array includes a reference bit line on which a reference current is imposed. During read operation, bit lines selected for reading are connected to current-to-voltage converters, each of which generates an output voltage based upon the input current flowing in the bit line. The output voltage of the current-to-voltage converter is compared to a reference voltage derived from the output of a reference current-to-voltage converter whose input is driven by a reference current on a reference bit line. Any cell that conducts more current than the reference current will be regarded as an erased cell. Conversely, any cell that conducts less current than the reference current will be regarded as a programmed cell.
    Type: Application
    Filed: November 16, 2005
    Publication date: May 17, 2007
    Inventors: Poongyueb Lee, MingChi Mitch Liu