Patents by Inventor Minghao Jin
Minghao Jin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230390240Abstract: Aspects of this invention is directed to compositions and methods for treating the visual cycle as well as the survival and function of cones and rods in patients with retinal degeneration.Type: ApplicationFiled: October 22, 2021Publication date: December 7, 2023Inventors: Nicolas G. BAZAN, Minghao JIN, Songhua LI
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Patent number: 10199456Abstract: A method of forming a semiconductor device is provided. The device includes a semiconductor substrate having a main surface and a rear surface vertically spaced apart from the main surface, a first doped region, a second doped region and a third doped region. The third doped region is interposed between the first and second doped regions beneath the main surface. Field plate trenches having field plates vertically extend from the main surface to a bottom that is arranged in the first doped region. A gate trench having a gate electrode vertically extends from the main surface to the first doped region. A compensation zone vertically extends from the bottom of the gate trench deeper into the first doped region. The compensation zone is laterally aligned with the gate trench and is adjacent to the field plates along a cross-sectional plane of the device that is parallel to the main surface.Type: GrantFiled: August 30, 2016Date of Patent: February 5, 2019Assignee: Infineon Technologies Austria AGInventors: Minghao Jin, Li Juin Yip, Oliver Blank, Martin Vielemeyer, Franz Hirler
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Publication number: 20160372538Abstract: A method of forming a semiconductor device is provided. The device includes a semiconductor substrate having a main surface and a rear surface vertically spaced apart from the main surface, a first doped region, a second doped region and a third doped region. The third doped region is interposed between the first and second doped regions beneath the main surface. Field plate trenches having field plates vertically extend from the main surface to a bottom that is arranged in the first doped region. A gate trench having a gate electrode vertically extends from the main surface to the first doped region. A compensation zone vertically extends from the bottom of the gate trench deeper into the first doped region. The compensation zone is laterally aligned with the gate trench and is adjacent to the field plates along a cross-sectional plane of the device that is parallel to the main surface.Type: ApplicationFiled: August 30, 2016Publication date: December 22, 2016Inventors: Minghao Jin, Li Juin Yip, Oliver Blank, Martin Vielemeyer, Franz Hirler
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Patent number: 9496339Abstract: A semiconductor device includes a central portion and an edge termination portion outside the central portion. The central portion includes a transistor cell array in a semiconductor substrate. Components of transistor cells of the transistor cell array are disposed in adjacent trench structures in the semiconductor substrate. The trench structures run in a first linear direction parallel to a main surface of the semiconductor substrate. The trench structures include a plurality of concatenated trench segments in a plane parallel to the main surface in the central portion, at least one of the trench segments connecting a first point and a second point of one trench structure, the first point and the second point being arranged along the first linear direction. The trench segment comprises a portion extending in a direction different from the first direction.Type: GrantFiled: June 2, 2014Date of Patent: November 15, 2016Assignee: Infineon Technologies Austria AGInventors: Minghao Jin, Rudolf Rothmaler, Oliver Blank, Joerg Ortner
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Patent number: 9478639Abstract: A method of forming trench electrode structures includes forming a first dielectric layer on a semiconductor substrate, forming a second layer above the first dielectric layer and forming an opening which extends through the second layer and the first dielectric layer to the semiconductor substrate such that part of the semiconductor substrate is uncovered. The method further comprises forming an epitaxial layer on the uncovered part of the semiconductor substrate, removing the second layer after forming the epitaxial layer and filling an open space formed by removing the second layer with an electrically conductive material. The electrically conductive material forms an electrode which is laterally surrounded by the epitaxial layer.Type: GrantFiled: February 27, 2015Date of Patent: October 25, 2016Assignee: Infineon Technologies Austria AGInventors: Minghao Jin, Oliver Blank, Rudolf Rothmaler, Johannes Baumgartl
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Patent number: 9443973Abstract: A semiconductor substrate has a main surface and a rear surface vertically spaced apart from the main surface, a first doped region, a second doped region and a third doped region. The third doped region is interposed between the first and second doped regions beneath the main surface. Field plate trenches having field plates vertically extend from the main surface to a bottom that is arranged in the first doped region. A gate trench having a gate electrode vertically extends from the main surface to the first doped region. A compensation zone vertically extends from the bottom of the gate trench deeper into the first doped region. The compensation zone is laterally aligned with the gate trench and is adjacent to the field plates along a cross-sectional plane of the device that is parallel to the main surface.Type: GrantFiled: November 26, 2014Date of Patent: September 13, 2016Assignee: Infineon Technologies Austria AGInventors: Minghao Jin, Li Juin Yip, Oliver Blank, Martin Vielemeyer, Franz Hirler
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Publication number: 20160254367Abstract: A method of forming trench electrode structures includes forming a first dielectric layer on a semiconductor substrate, forming a second layer above the first dielectric layer and forming an opening which extends through the second layer and the first dielectric layer to the semiconductor substrate such that part of the semiconductor substrate is uncovered. The method further comprises forming an epitaxial layer on the uncovered part of the semiconductor substrate, removing the second layer after forming the epitaxial layer and filling an open space formed by removing the second layer with an electrically conductive material. The electrically conductive material forms an electrode which is laterally surrounded by the epitaxial layer.Type: ApplicationFiled: February 27, 2015Publication date: September 1, 2016Inventors: Minghao Jin, Oliver Blank, Rudolf Rothmaler, Johannes Baumgartl
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Patent number: 9425788Abstract: A method for operating a circuit includes providing a three terminal main transistor and a four terminal sense transistor having a field plate. The method includes simultaneously applying a gate pulse on a gate terminal of the sense transistor and a gate terminal of the main transistor, and applying a field plate pulse on a field plate of the sense transistor. The field plate pulse is synchronous and in phase with the gate pulse.Type: GrantFiled: March 18, 2015Date of Patent: August 23, 2016Assignee: Infineon Technologies Austria AGInventors: Minghao Jin, Oliver Blank, Quaglino Roberto
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Publication number: 20160149028Abstract: A semiconductor substrate has a main surface and a rear surface vertically spaced apart from the main surface, a first doped region, a second doped region and a third doped region. The third doped region is interposed between the first and second doped regions beneath the main surface. Field plate trenches having field plates vertically extend from the main surface to a bottom that is arranged in the first doped region. A gate trench having a gate electrode vertically extends from the main surface to the first doped region. A compensation zone vertically extends from the bottom of the gate trench deeper into the first doped region. The compensation zone is laterally aligned with the gate trench and is adjacent to the field plates along a cross-sectional plane of the device that is parallel to the main surface.Type: ApplicationFiled: November 26, 2014Publication date: May 26, 2016Inventors: Minghao Jin, Li Juin Yip, Oliver Blank, Martin Vielemeyer, Franz Hirler
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Patent number: 9324823Abstract: A semiconductor device includes a semiconductor body having a first surface vertically spaced apart from a second surface. A first trench vertically extends into the semiconductor body from the first surface and includes first and second sidewalls extending across the semiconductor body in a lateral direction that is parallel to the first surface. A field electrode is arranged in first trench and electrically insulated from the semiconductor body by a field dielectric. A first gate electrode is arranged in the first trench. The first gate electrode is electrically insulated from the field electrode by the field dielectric and is electrically insulated from the semiconductor body by a first gate oxide. The first gate electrode includes widened and tapered portions that are continuously connected and adjacent to one another in the lateral direction. The first gate oxide forms a non-perpendicular angle with the first sidewall in the lateral direction.Type: GrantFiled: August 15, 2014Date of Patent: April 26, 2016Assignee: Infineon Technologies Austria AGInventors: Oliver Blank, Rudolf Rothmaler, Christof Altstaetter, Minghao Jin
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Publication number: 20160049486Abstract: A semiconductor device includes a semiconductor body having a first surface vertically spaced apart from a second surface. A first trench vertically extends into the semiconductor body from the first surface and includes first and second sidewalls extending across the semiconductor body in a lateral direction that is parallel to the first surface. A field electrode is arranged in first trench and electrically insulated from the semiconductor body by a field dielectric. A first gate electrode is arranged in the first trench. The first gate electrode is electrically insulated from the field electrode by the field dielectric and is electrically insulated from the semiconductor body by a first gate oxide. The first gate electrode includes widened and tapered portions that are continuously connected and adjacent to one another in the lateral direction. The first gate oxide forms a non-perpendicular angle with the first sidewall in the lateral direction.Type: ApplicationFiled: August 15, 2014Publication date: February 18, 2016Inventors: Oliver Blank, Rudolf Rothmaler, Christof Altstaetter, Minghao Jin
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Publication number: 20150349056Abstract: A semiconductor device includes a central portion and an edge termination portion outside the central portion. The central portion includes a transistor cell array in a semiconductor substrate. Components of transistor cells of the transistor cell array are disposed in adjacent trench structures in the semiconductor substrate. The trench structures run in a first linear direction parallel to a main surface of the semiconductor substrate. The trench structures include a plurality of concatenated trench segments in a plane parallel to the main surface in the central portion, at least one of the trench segments connecting a first point and a second point of one trench structure, the first point and the second point being arranged along the first linear direction. The trench segment comprises a portion extending in a direction different from the first direction.Type: ApplicationFiled: June 2, 2014Publication date: December 3, 2015Inventors: Minghao Jin, Rudolf Rothmaler, Oliver Blank, Joerg Ortner
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Publication number: 20120250200Abstract: A triac circuit comprises a triac having first and second main terminals (MT1,MT2) and a gate terminal and a thyristor connected between one of the main terminals (MT1,MT2) and a control terminal of the triac circuit. The thyristor is used to prevent turn on of the triac when it has turned on by temperature induced leakage currents.Type: ApplicationFiled: March 29, 2012Publication date: October 4, 2012Applicant: NXP B.V.Inventors: Nick Ham, Ed Huang, Jianfeng Zhang, Andrew Mark Warwick, Andrew Butler, Minghao Jin
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Publication number: 20120168859Abstract: A method is disclosed of manufacturing a vertical transistor which comprises providing a substrate including a vertical stack of regions including a source region separated from a drain region by a channel region; forming a trench in said substrate, said trench at least partially extending into said vertical stack of regions; lining said trench with a stack comprising a gate dielectric liner, an etch protection layer and a further insulating layer; filling the remainder of the trench with a shield electrode material; exposing a top portion of the shield electrode material by removing the further insulating layer to a first depth in said trench; forming a inter electrode dielectric on the exposed shield electrode material; removing the etch protection layer to the first depth from said trench; and forming a gate electrode in said trench between the inter electrode dielectric liner and the exposed portion of the gate dielectric liner.Type: ApplicationFiled: December 20, 2011Publication date: July 5, 2012Applicant: NXP B.V.Inventors: Minghao Jin, David William Calton, Nick Kershaw, Chris Rogers