Abstract: A SOI wafer is disclosed. The SOI wafer may be characterized by surface roughness of a top silicon layer of the SOI wafer is less than 4 ?, thickness uniformity of the top silicon layer is within ±1%, and a total number of particles on a surface of the top silicon layer of the SOI wafer, measured with setting of 37 nm of SPx detection threshold, is less than 100.

Abstract: A battery cell includes: a shell, including a first wall; an electrode assembly, disposed inside the shell; and a terminal assembly, including an electrode terminal and an elastic member. The electrode terminal includes a fixed portion for electrical connection with the electrode assembly and a movable portion for electrical connection with a current collecting component. The fixed portion is fixedly disposed on the first wall. The movable portion is movably disposed on the first wall, and has a first position in contact with the fixed portion and a second position separated from the fixed portion. The elastic member is used for applying elastic force to the movable portion to maintain the movable portion in the first position. The movable portion is configured to move from the first position to the second position against the elastic force when internal pressure of the battery cell reaches a threshold.

Abstract: A packing device for an adsorption device is disclosed. The packing device includes a heating support frame, a packing layer support and a plurality of packing cells. The packing layer support is horizontally extended and arranged in a length direction of the heating support frame, and grooves are alternately provided on both sides of the packing layer support. A clamping slot corresponding to each groove is provided on one side of each packing cell, the packing cell is clamped to the packing layer support through the clamping slot, and one side of the packing cell is in contact with an inner wall of the heating support frame.

Abstract: A packing device for an adsorption device is disclosed. The packing device includes a heating support frame, a packing layer support and a plurality of packing cells. The packing layer support is horizontally extended and arranged in a length direction of the heating support frame, and grooves are alternately provided on both sides of the packing layer support. A clamping slot corresponding to each groove is provided on one side of each packing cell, the packing cell is clamped to the packing layer support through the clamping slot, and one side of the packing cell is in contact with an inner wall of the heating support frame.

Abstract: A support frame apparatus for a thermal fluid includes: a support frame adapted to be coupled to an inner wall of an adsorption device, and defining a chamber therein, a first channel for accommodating the thermal fluid being formed in a wall of the support frame, and a plurality of first holes being formed in the wall of the support frame and being opened to the chamber to spray the thermal fluid into the chamber; and a plurality of support arms disposed within the chamber and each having a first end coupled to the support frame and a second end extended inwardly from the support frame, the support arm defining a second channel therein fluid communicated to the first channel, and the support arm having a plurality of second holes communicated to the second channel and opened to the chamber to spray the thermal fluid into the chamber.

Abstract: The present invention provides a method of growing a single-crystal silicon, comprising: loading a batch of polysilicon material in a crucible of a furnace, heating the crucible to melt the polysilicon material into a mass of silicon melt, confirming a liquid surface of the mass of silicon melt, applying a superconducting magnetic field to the mass of silicon melt with a magnetic field generator and adjusting a position of the magnetic field generator to position a maximum point of the superconducting magnetic field within a predetermined range under the liquid surface, and dipping a seed crystal into the silicon melt, and pulling the seed crystal during rotation of the seed crystal to crystallize the single crystal under the seed crystal until forming an ingot of single-crystal silicon. Oxygen content in the ingot is controlled through positioning the maximum point of the superconducting magnetic field under the liquid surface.

Abstract: A decoding drive circuit includes at least one decoding driver. The decoding driver includes a first-stage drive circuit and a second-stage drive circuit. Herein, the first-stage drive circuit is configured to receive an enabling control signal, a decoding input signal and a drive control signal, and generate a first drive signal and a second drive signal according to the enabling control signal, the drive control signal and the decoding input signal. The second-stage drive circuit is configured to generate a target word line drive signal according to the first drive signal and the second drive signal. Thus, the embodiments of the disclosure provide a new decoding drive circuit.

Abstract: The present application provides a semiconductor substrate and a preparation process thereof. In the present application, the polysilicon layer includes the first polysilicon layer and the second polysilicon layer formed separately to generate the less stress, the more random grain orientation and the smaller grain size, maintain the high grain boundary density, and enhance the charge capture. By the combination of different deposition temperature and the combination of two cooling steps after each isothermal annealing treatment, the rate of contraction between the first polysilicon layer and the second polysilicon layer and the initial semiconductor substrate is decreased, and the thermal mismatch of semiconductor substrate is reduced. The stretch between the polysilicon layer and the initial semiconductor substrate can be reduced to prevent the warpage of the semiconductor substrate. Thereby, the stress generated during the growth process of the polysilicon layer can be further reduced.

Abstract: Embodiments relate to a decoder driver circuit and a memory chip. The decoder driver circuit includes: a plurality of sub drive units configured to generate a main word line drive signal according to a power supply voltage signal, a first decoding input signal and an intermediate decoding output signal; and a plurality of decoding control circuits connected to the plurality of sub drive units, where the plurality of decoding control circuits are configured to generate the intermediate decoding output signal according to an enable control signal and a second decoding input signal. When the intermediate decoding output signal is in a first state, the main word line drive signal is in a non-drive state.

Abstract: A SOI structured semiconductor silicon wafer and a method of making the same is disclosed, comprising: loading a semiconductor silicon wafer in a first batch vertical furnace, and conducting a long-time thermal treatment; conducting a sacrificial oxidation process in a second batch vertical furnace after the long-time thermal treatment; conducting a rapid thermal annealing treatment after the second step ; wherein during the long-time thermal treatment, the semiconductor silicon wafer is kept in a protection atmosphere of pure , heated-up until meet a target temperature after changing the atmosphere of pure argon into a mixture gas of 1-n % Ar and n % H2, and then annealed in the atmosphere of a mixture of 1-n % Ar and n % hydrogen gas or pure Ar, and n is a value no greater than 10.

Abstract: The present application provides a process of surface treatment of a silicon-on-insulator (SOI) wafer comprising: providing a SOI wafer comprising a back substrate, a top silicon layer and an insulating buried layer, wherein the insulating buried layer is located between the back substrate and the top silicon layer, and the top silicon layer has a surface roughness of larger than 10 ?; conducting a first planarization to a surface of the top silicon layer by conducting a batch annealing process at a first target temperature, and conducting a second planarization to a surface of the top silicon layer by conducting a rapid thermal annealing process at a second target temperature. The present application combines the batch annealing process and the rapid thermal annealing process to optimize the SOI wafer, especially the surface roughness of the SOI wafer. The SOI wafer planarized by the two thermal annealing processes has a good surface roughness of the top silicon layer which satisfies process requirements.

Abstract: The present application provides a method of surface treatment of a SOI wafer comprising: providing a SOI wafer comprising a substrate, atop silicon layer and an insulating buried layer, wherein the insulating buried layer is located between the back substrate and the top silicon layer, and the top silicon layer has a surface roughness of larger than 10 ?; removing a native oxide layer from a surface of the top silicon layer by conducting a first isothermal annealing process at a first target temperature, wherein the first isothermal annealing process is under atmosphere of a mixture of argon and hydrogen; and planarizing the surface of the top silicon layer by conducting a second isothermal annealing process at a second target temperature, wherein the second target temperature is higher than the first target temperature, and the second isothermal annealing process is under atmosphere of argon.

Abstract: A SOI wafer and a method of final processing the same is disclosed. Rapid thermal annealing comprises a first heating process in an atmosphere of a mixture of argon gas and hydrogen gas, volume of the hydrogen gas being less than 10% of whole volume of the mixture, and a first annealing process in an atmosphere of argon gas and optionally hydrogen gas, volume of the hydrogen gas being no greater than 10% of whole volume of the mixture. Long-time thermal annealing comprises a second heating process in an atmosphere of a mixture of argon gas and hydrogen gas, volume of the hydrogen gas being less than 10% of whole volume of the mixture, and a second annealing process in an atmosphere of argon gas and optionally hydrogen gas, volume of the hydrogen gas being no greater than 10% of whole volume of the mixture.

Abstract: The invention provides a measuring method of resistivity of a wafer, comprising: choosing a wafer to be measured, conducting a thermal treatment for the wafer to remove a thermal doner in the wafer, conducting an oxidation process for the wafer to form an oxidized surface on the wafer, and measuring resistivity of the wafer. In the method, firstly, the wafer is oxidized to get the oxidized surface, so as to restrict surface variation when placing the wafer in a later process. Therefore, the resistivity measurement of the wafer surface only slightly varies.

Abstract: The present application provides a method for verification of conductivity type of a silicon wafer. The method comprises measuring the resistivity of the silicon wafer to obtain a first resistivity, placing the silicon wafer under atmosphere of air for a predicted time period, measuring the resistivity of the silicon wafer to obtain a second resistivity, and determining conductivity type of the silicon wafer by comparing the first resistivity and the second resistivity. The method can be applied to a silicon wafer having a high resistivity such as higher than 500 ohm-cm to rapidly and accurately determine conductivity type of the silicon wafer. Advantages of the method of the present application include accurate test results, easy operation, simple device requirement, and reduced cost.

Abstract: A method for automatic expansion of a storage array includes: acquiring a word-line total number and bit-line total number of a target expanded storage array; calculating a translation amount of a translation array in a translation direction according to the word-line total number and the bit-line total number, a word-line total number and bit-line total number of the translation array and a preset translation rule, and calculating a number of repetitions of a repetition array in a repetition direction according to the translation amount, a word-line total number and bit-line total number of the repetition array and a preset repetition rule; and controlling at least part of the translation array and at least part of the repetition array to translate the translation amount along the translation direction and controlling the repetition array to repeat for the number of repetitions along the repetition direction to obtain the target expanded storage array.

Abstract: A semiconductor structure and a memory are provided. The semiconductor structure includes an active region pattern, a first type of grid patterns overlapping with the active region pattern and extending along the first direction, and a metal layer pattern extending along the first direction. The metal layer pattern is in contact with an active region pattern arranged on both sides of the first type of grid patterns through a contact hole pattern.

Abstract: A semiconductor structure and a memory are provided The semiconductor structure includes: a first active area pattern; a first gate pattern, a second gate pattern, a third gate pattern and a fourth gate pattern which are arranged at intervals in a first direction; a first connection pattern, arranged to connect the second gate pattern and the third gate pattern in parallel; a second connection pattern, arranged to connect the first gate pattern and the fourth gate pattern in parallel; at least two first contact hole patterns arranged in parallel; and at least two second contact hole patterns and at least two third contact hole patterns arranged in parallel.

Abstract: A method for displaying an application interface on a terminal. The method includes determining a first application of an application group. The application group includes multiple identical applications installed on the terminal, and the first application is a most recently used application of the multiple identical applications. The method further includes displaying application indication information in a specific area in an interface of the terminal, for indicating the first application.

Abstract: A method for image generation and colorization includes displaying a drawing board interface; obtaining semantic labels of an image to be generated based on user input on the drawing board interface, each semantic label indicating a content of a region in the image to be generated; obtaining a color feature of the image to be generated; and automatically generating the image using a generative adversarial network (GAN) model according to the semantic labels and the color feature. The color feature is a latent vector input to the GAN model.