Abstract: An SGT MOSFET comprising a substrate, an epitaxial layer, a masking dielectric layer, an interlayer dielectric layer, a source lead-out contact hole, and a source conductive layer and a method for manufacturing the SGT MOSFET are provided. The epitaxial layer is on an upper surface of the substrate and comprises a cellular trench structure, a terminal lead-out structure, a source lead-out structure, a body region, and a source region. The source lead-out structure comprises a source lead-out conductive layer. The masking dielectric layer and the interlayer dielectric layer are sequentially stacked above the epitaxial layer. The source lead-out contact hole penetrates the interlayer dielectric layer and the masking dielectric layer and extends into the source lead-out conductive layer, The source conductive layer fills the source lead-out contact hole. The masking dielectric layer is formed between the interlayer dielectric layer and the epitaxial layer and masks the third dielectric layer.

Abstract: A controlled-release fertilizer including an inside core of water-soluble fertilizer particle and an outer layer coating material, wherein the coating material is a bentonite modified or sodium bentonite modified waterborne polymer; and a preparation method including: weighing the fertilizer core particle and the modified waterborne polymer emulsion according to the amount, preparing a semi-processed coating controlled-release fertilizer by using a coating machine, and placing the semi-processed coating controlled-release fertilizer in an oven for postprocessing to improve the compactness of the film material.