Abstract: A self-calibration detection device and a temperature demodulation method oriented to a fiber Raman temperature sensing system. The self-calibration detection device comprises a fiber Raman thermodetector, thermostatic baths, a multi-mode sensing fiber, and a multi-mode reflector. The fiber Raman thermodetector comprises a pulsed laser whose output end is connected to the input end of a WDM. Two output ends of the WDM are respectively connected to input ends of a first and second APDs. Output ends of the first and second APDs are respectively connected to input ends of a first and second LNAs. Output ends of the first and second LNAs are connected to the input end of a data acquisition card whose output end is connected with the input end of a computer. The temperature demodulation method can solve the problems of low temperature measuring accuracy, lower temperature measurement stability and low temperature measurement efficiency.

Abstract: A temperature demodulation method oriented toward a distributed fiber Raman temperature sensing system, the method comprising the following steps: step 1 of constructing a high-precision temperature detection device oriented towards a distributed fiber Raman sensing system; step 2 of performing signal processing with respect to Stokes light and anti-Stokes light at a calibration stage; step 3 of performing signal processing with respect to Stokes light and the anti-Stokes light at a measurement stage; and step 4 of obtaining a high-precision temperature demodulation technique oriented toward the distributed fiber Raman sensor. The method is used to effectively resolve the issue of low temperature measuring accuracy caused by Rayleigh crosstalk in existing distributed fiber Raman temperature measurement systems, and temperature measurement accuracy thereof is expected to fall within ±0.1° C. The method is applicable to distributed fiber Raman temperature measurement systems.

Abstract: Disclosed by the present invention is an ultra-wideband white noise source based on a slicing super-continuum spectrum. The entropy source used is a super-continuum spectrum photon entropy source having a coverage range of several hundreds of nm, white noise can thus be generated in a wide frequency range, thereby effectively avoiding the bandwidth bottleneck of an electronic device. By separately adjusting the filter centers of two optical filters, the center frequency for generating the white noise can be adjusted so as to get adapted to different working situations. High bandwidth white noise can be generated by simply filtering the super-continuum spectrum and performing photoelectric conversion, and in comparison with the previous solutions, the solution of the present invention is simpler and can be easily implemented.

Abstract: Disclosed by the present invention is an ultra-wideband white noise source based on a slicing super-continuum spectrum. The entropy source used is a super-continuum spectrum photon entropy source having a coverage range of several hundreds of nm, white noise can thus be generated in a wide frequency range, thereby effectively avoiding the bandwidth bottleneck of an electronic device. By separately adjusting the filter centers of two optical filters, the center frequency for generating the white noise can be adjusted so as to get adapted to different working situations. High bandwidth white noise can be generated by simply filtering the super-continuum spectrum and performing photoelectric conversion, and in comparison with the previous solutions, the solution of the present invention is simpler and can be easily implemented.

Abstract: An InP-based monolithic integrated chaotic semiconductor laser chip capable of feeding back randomly diffused light, being composed of six regions: a left DFB semiconductor laser, a bidirectional SOA, a left passive optical waveguide region, a doped passive optical waveguide region, a right passive optical waveguide region, and a right DFB semiconductor laser, specifically including: an N+ electrode layer, an N-type substrate, an InGaAsP lower confinement layer, an undoped InGaAsP multiple quantum well active region layer, doped particles, distributed feedback Bragg gratings, an InGaAsP upper confinement layer, a P-type heavily doped InP cover layer, a P-type heavily doped InGaAs contact layer, a P+ electrode layer, a light-emitting region, and isolation grooves. It effectively solves problems of bulky volume of the existing chaotic laser source, the time-delay signature of chaotic laser, narrow bandwidth, and low coupling efficiency of the light and the optical waveguide.

Abstract: A temperature demodulation method oriented toward a distributed fiber Raman temperature sensing system, the method comprising the following steps: step 1 of constructing a high-precision temperature detection device oriented towards a distributed fiber Raman sensing system; step 2 of performing signal processing with respect to Stokes light and anti-Stokes light at a calibration stage; step 3 of performing signal processing with respect to Stokes light and the anti-Stokes light at a measurement stage; and step 4 of obtaining a high-precision temperature demodulation technique oriented toward the distributed fiber Raman sensor. The method is used to effectively resolve the issue of low temperature measuring accuracy caused by Rayleigh crosstalk in existing distributed fiber Raman temperature measurement systems, and temperature measurement accuracy thereof is expected to fall within ±0.1° C. The method is applicable to distributed fiber Raman temperature measurement systems.

Abstract: A self-calibration detection device and a temperature demodulation method oriented to a fiber Raman temperature sensing system. The self-calibration detection device comprises a fiber Raman thermodetector, thermostatic baths, a multi-mode sensing fiber, and a multi-mode reflector. The fiber Raman thermodetector comprises a pulsed laser whose output end is connected to the input end of a WDM. Two output ends of the WDM are respectively connected to input ends of a first and second APDs. Output ends of the first and second APDs are respectively connected to input ends of a first and second LNAs. Output ends of the first and second LNAs are connected to the input end of a data acquisition card whose output end is connected with the input end of a computer. The temperature demodulation method can solve the problems of low temperature measuring accuracy, lower temperature measurement stability and low temperature measurement efficiency.

Abstract: A monolithic integrated semiconductor random laser comprising substrate, lower confinement layer on the substrate, active layer on the lower confinement layer, upper confinement layer on the active layer, strip-shaped waveguide layer longitudinally made in middle of the upper confinement layer, P+ electrode layer divided into two segments and made on the waveguide layer and N+ electrode layer on a back face of the lower confinement layer, wherein the two segments correspond respectively to gain region and random feedback region. The random feedback region uses a doped waveguide to randomly feedback light emitted by the gain region and then generates random laser which is random in frequency and intensity. Further, the semiconductor laser is light, small, stable in performance and strong in integration.

Abstract: An InP-based monolithic integrated chaotic semiconductor laser chip capable of feeding back randomly diffused light, being composed of six regions: a left DFB semiconductor laser, a bidirectional SOA, a left passive optical waveguide region, a doped passive optical waveguide region, a right passive optical waveguide region, and a right DFB semiconductor laser, specifically including: an N+ electrode layer, an N-type substrate, an InGaAsP lower confinement layer, an undoped InGaAsP multiple quantum well active region layer, doped particles, distributed feedback Bragg gratings, an InGaAsP upper confinement layer, a P-type heavily doped InP cover layer, a P-type heavily doped InGaAs contact layer, a P+ electrode layer, a light-emitting region, and isolation grooves. It effectively solves problems of bulky volume of the existing chaotic laser source, the time-delay signature of chaotic laser, narrow bandwidth, and low coupling efficiency of the light and the optical waveguide.

Abstract: A monolithic integrated semiconductor random laser composed of a gain region and random feedback region, comprising: a substrate, a lower confinement layer on the substrate, an active layer on the lower confinement layer, an upper confinement layer on the active layer, a strip-shaped waveguide layer longitudinally made in middle of the upper confinement layer, a P+ electrode layer divided into two segments by an isolation groove and made on the waveguide layer, and an N+ electrode layer on a back face of the lower confinement layer. The two segments of the P+ electrode layer correspond respectively to the gain region and the random feedback region. The random feedback region uses a doped waveguide to randomly feed back light emitted and amplified by the gain region. As a result, random laser is emitted.