Patents by Inventor Ming Jie He
Ming Jie He has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11557470Abstract: A sputtering target assembly, sputtering apparatus, and method, the target assembly including a backing plate having an aperture formed therein; and a target bonded to a front surface of the backing plate. The aperture is disposed on the backing plate such that a first end of the aperture is sealed by a portion of the target that is predicted by a sputtering target erosion profile to have the highest etching rate during a corresponding sputtering process.Type: GrantFiled: July 12, 2022Date of Patent: January 17, 2023Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Chen-Fang Chung, Wen-Cheng Cheng, Po Wen Yang, Ming-Jie He, Yan-Zi Lu, Cheng-Yi Teng
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Publication number: 20220351953Abstract: A sputtering target assembly, sputtering apparatus, and method, the target assembly including a backing plate having an aperture formed therein; and a target bonded to a front surface of the backing plate. The aperture is disposed on the backing plate such that a first end of the aperture is sealed by a portion of the target that is predicted by a sputtering target erosion profile to have the highest etching rate during a corresponding sputtering process.Type: ApplicationFiled: July 12, 2022Publication date: November 3, 2022Inventors: Chen-Fang CHUNG, Wen-Cheng CHENG, Po Wen YANG, Ming-Jie HE, Yan-Zi LU, Cheng-Yi TENG
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Patent number: 11424111Abstract: A sputtering target assembly, sputtering apparatus, and method, the target assembly including a backing plate having an aperture formed therein; and a target bonded to a front surface of the backing plate. The aperture is disposed on the backing plate such that a first end of the aperture is sealed by a portion of the target that is predicted by a sputtering target erosion profile to have the highest etching rate during a corresponding sputtering process.Type: GrantFiled: June 25, 2020Date of Patent: August 23, 2022Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Chen-Fang Chung, Wen-Cheng Cheng, Po Wen Yang, Ming-Jie He, Yan-Zi Lu, Cheng-Yi Teng
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Patent number: 11390520Abstract: In an embodiment, a system includes: a chamber; and a magnetic assembly contained within the chamber. The magnetic assembly comprises: an inner magnetic portion comprising first magnets; and an outer magnetic portion comprising second magnets. At least two adjacent magnets, of either the first magnets or the second magnets, have different vertical displacements, and the magnetic assembly is configured to rotate around an axis to generate an electromagnetic field that moves ions toward a target region within the chamber.Type: GrantFiled: May 25, 2018Date of Patent: July 19, 2022Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chen-Fang Chung, Wen-Cheng Cheng, Tsez-Chong Tsai, Shuen-Liang Tseng, Szu-Hsien Lo, Po-Wen Yang, Ming-Jie He
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Publication number: 20220223391Abstract: A method for modifying magnetic field distribution in a deposition chamber is disclosed. The method includes the operations of providing a target magnetic field distribution, removing a first plurality of fixed magnets in the deposition chamber, replacing each of the first plurality of fixed magnets with respective ones of a second plurality of magnets, performing at least one of adjusting a position of at least one of the second plurality of the magnets, and adjusting a size of at least one of the second plurality of magnets, adjusting a magnetic flux of at least one of the second plurality of magnets, measuring the magnetic field distribution in the deposition chamber, and comparing the measured magnetic field distribution in the deposition chamber with the target magnetic field distribution.Type: ApplicationFiled: March 31, 2022Publication date: July 14, 2022Inventors: Ming-Jie HE, Shawn YANG, Szu-Hsien LO, Shuen-Liang TSENG, Wen-Cheng CHENG, Chen-Fang CHUNG, Chia-Lin HSUEH, Kuo-Pin CHUANG
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Patent number: 11322338Abstract: A method for modifying magnetic field distribution in a deposition chamber is disclosed. The method includes the steps of providing a target magnetic field distribution, removing a first plurality of fixed magnets in the deposition chamber, replacing each of the first plurality of fixed magnets with respective ones of a second plurality of magnets, performing at least one of adjusting a position of at least one of the second plurality of the magnets, and adjusting a size of at least one of the second plurality of magnets, adjusting a magnetic flux of at least one of the second plurality of magnets, measuring the magnetic field distribution in the deposition chamber, and comparing the measured magnetic field distribution in the deposition chamber with the target magnetic field distribution.Type: GrantFiled: March 29, 2018Date of Patent: May 3, 2022Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ming-Jie He, Shawn Yang, Szu-Hsien Lo, Shuen-Liang Tseng, Wen-Cheng Cheng, Chen-Fang Chung, Chia-Lin Hsueh, Kuo-Pin Chuang
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Publication number: 20210407777Abstract: A sputtering target assembly, sputtering apparatus, and method, the target assembly including a backing plate having an aperture formed therein; and a target bonded to a front surface of the backing plate. The aperture is disposed on the backing plate such that a first end of the aperture is sealed by a portion of the target that is predicted by a sputtering target erosion profile to have the highest etching rate during a corresponding sputtering process.Type: ApplicationFiled: June 25, 2020Publication date: December 30, 2021Inventors: Chen-Fang Chung, Wen-Cheng Cheng, Po Wen Yang, Ming-Jie He, Yan-Zi Lu, Cheng-Yi Teng
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Publication number: 20190066988Abstract: A method for modifying magnetic field distribution in a deposition chamber is disclosed. The method includes the steps of providing a target magnetic field distribution, removing a first plurality of fixed magnets in the deposition chamber, replacing each of the first plurality of fixed magnets with respective ones of a second plurality of magnets, performing at least one of adjusting a position of at least one of the second plurality of the magnets, and adjusting a size of at least one of the second plurality of magnets, adjusting a magnetic flux of at least one of the second plurality of magnets, measuring the magnetic field distribution in the deposition chamber, and comparing the measured magnetic field distribution in the deposition chamber with the target magnetic field distribution.Type: ApplicationFiled: March 29, 2018Publication date: February 28, 2019Inventors: Ming-Jie HE, Shawn YANG, Szu-Hsien LO, Shuen-Liang TSENG, Wen-Cheng CHENG, Chen-Fang CHUNG, Chia-Lin HSUEH, Kuo-Pin CHUANG
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Publication number: 20190035611Abstract: In an embodiment, a system includes: a chamber; and a magnetic assembly contained within the chamber. The magnetic assembly comprises: an inner magnetic portion comprising first magnets; and an outer magnetic portion comprising second magnets. At least two adjacent magnets, of either the first magnets or the second magnets, have different vertical displacements, and the magnetic assembly is configured to rotate around an axis to generate an electromagnetic field that moves ions toward a target region within the chamber.Type: ApplicationFiled: May 25, 2018Publication date: January 31, 2019Inventors: Chen-Fang Chung, Wen-Cheng Cheng, Tsez-Chong Tsai, Shuen-Liang Tseng, Szu-Hsien Lo, Shawn Yang, Ming-Jie He
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Patent number: 8147909Abstract: Provided is a method for processing a wafer that includes providing an alloy susceptor including an exterior surface and a wafer contact surface. The exterior surface of the alloy susceptor is treated to produce a roughness of the exterior surface. The roughened exterior surface of is coated with a ceramic material. The alloy susceptor including the ceramic-coated roughened exterior surface is positioned in a wafer process chamber. A plurality of layers of a film are deposited on the ceramic-coated roughened exterior surface of the alloy susceptor, wherein a first adhesion exists between the plurality of layers of the film and the ceramic material coated on the roughened exterior surface of the alloy susceptor that is greater than a second adhesion that would exist between the plurality of layers of the film and a non-roughened exterior surface of the alloy susceptor without the ceramic material.Type: GrantFiled: March 26, 2009Date of Patent: April 3, 2012Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shuo-Jieh Wu, Hsu Chun Yuan, Tung-Li Lee, Steven Li, Hs Chiu, Yen-Yu Chen, Alan Chen, Ming Jie He, Yu-Wei Hsueh
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Publication number: 20100247773Abstract: Provided is a method for processing a wafer that includes providing an alloy susceptor including an exterior surface and a wafer contact surface. The exterior surface of the alloy susceptor is treated to produce a roughness of the exterior surface. The roughened exterior surface of is coated with a ceramic material. The alloy susceptor including the ceramic-coated roughened exterior surface is positioned in a wafer process chamber. A plurality of layers of a film are deposited on the ceramic-coated roughened exterior surface of the alloy susceptor, wherein a first adhesion exists between the plurality of layers of the film and the ceramic material coated on the roughened exterior surface of the alloy susceptor that is greater than a second adhesion that would exist between the plurality of layers of the film and a non-roughened exterior surface of the alloy susceptor without the ceramic material.Type: ApplicationFiled: March 26, 2009Publication date: September 30, 2010Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shuo-Jieh Wu, Hsu Chun Yuan, Tung-Li Lee, Steven Lin, Hs Chiu, Yen-Yu Chen, Alan Chen, Ming Jie He, Yu-Wei Hsueh
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Patent number: D1016698Type: GrantFiled: October 27, 2021Date of Patent: March 5, 2024Assignee: Foxtron Vehicle Technologies Co., Ltd.Inventors: Tse-Min Cheng, Ming-Chang Lin, Yuan-Jie He, Chiao-Chi Lin, Lu-Han Lee