Abstract: An OLED display includes: a color resistor layer, a buffer layer covering the color resistor layer, a transistor having a transparent conductive layer, a gate metal layer, and an output electrode, a pixel electrode, and a storage capacitor having a first transparent electrode and a second transparent electrode. The pixel electrode is the second transparent electrode, a projected area of the first transparent electrode on the substrate is larger than or equal to a projected area of the color resistor layer on the substrate. The upper electrode and lower electrode of the storage capacitor are replaced with a transparent material to raise the aperture rate. The gate insulating layer is used in the capacitor area to increase the capacitance. The storage capacitor adopts the transparent electrodes to solve the issues of low capacitance of the storage capacitor and the unstable components caused by the reflected light.

Abstract: An OLED display includes: a color resistor layer, a buffer layer covering the color resistor layer, a transistor having a transparent conductive layer, a gate metal layer, and an output electrode, a pixel electrode, and a storage capacitor having a first transparent electrode and a second transparent electrode. The pixel electrode is the second transparent electrode, a projected area of the first transparent electrode on the substrate is larger than or equal to a projected area of the color resistor layer on the substrate. The upper electrode and lower electrode of the storage capacitor are replaced with a transparent material to raise the aperture rate. The gate insulating layer is used in the capacitor area to increase the capacitance. The storage capacitor adopts the transparent electrodes to solve the issues of low capacitance of the storage capacitor and the unstable components caused by the reflected light.

Abstract: Disclosed are an array substrate and a display device. The array substrate includes a baseplate, a buffer layer and an active layer that are arranged in sequence. The active layer includes a first active region and a second active region. A conducting channel of the first active region is made of a low temperature poly-silicon, and a conducting channel of the second active region is made of an oxide semiconductor. The display device includes the array substrate. Through selecting a low temperature poly-silicon material as a conducting channel material of the first active region and an oxide semiconductor material as a conducting channel material of the second active region, the array substrate and the display device can have a rapid switching speed and a high luminous homogeneity.

Abstract: The disclosure provides a back-channel-etch type oxide semiconductor TFT substrate and fabricating method thereof. The method configures an active layer as a double layer structure, and a first oxide semiconductor layer located in a lower layer is prepared according to normal deposition process parameters and has normal density and a second oxide semiconductor layer located in an upper layer is prepared by changing deposition process parameters and has higher density; the first oxide semiconductor layer has lower density and higher mobility and the second oxide semiconductor layer has higher density, fewer numbers of film defects, more strong etch resistance, it is capable of reducing damage of a channel region of an active layer during the process for etching a drain electrode and a source electrode, and at the same time saves a mask for a etch stop layer, cuts down the fabricating cost.

Abstract: A thin film transistor structure is provided with a glass substrate, a buffer layer, a metal oxide semiconductor layer, a gate insulating layer, a gate metal layer, an interlayer insulating layer, a source metal layer, a drain metal layer, and a protective layer. A shielding metal layer is disposed between the glass substrate and the buffer layer, the gate insulating layer has a shielding metal layer contact hole passing through the gate insulating layer and the buffer layer, and the gate metal layer connects with the shielding metal layer through the shielding metal layer contact hole.

Abstract: A thin film transistor structure is provided with a glass substrate, a buffer layer, a metal oxide semiconductor layer, a gate insulating layer, a gate metal layer, an interlayer insulating layer, a source metal layer, a drain metal layer, and a protective layer. A shielding metal layer is disposed between the glass substrate and the buffer layer, the gate insulating layer has a shielding metal layer contact hole passing through the gate insulating layer and the buffer layer, and the gate metal layer connects with the shielding metal layer through the shielding metal layer contact hole.

Abstract: A thin film transistor structure is provided with a glass substrate, a buffer layer, a metal oxide semiconductor layer, and a gate metal layer. A shielding metal layer is disposed between the glass substrate and the buffer layer. A projection area of the gate metal layer on a plane of the glass substrate aligns to a projection area of the shielding metal layer on the plane, the projection area of the shielding metal layer on the plane of the glass substrate covers the projection area of the metal oxide semiconductor layer of the channel area on the plane of the glass substrate.