Abstract: A three-dimensional (3D) memory device and methods for forming the same are provided. The 3D memory device includes a first semiconductor structure having a core region and a non-array region. The first semiconductor structure includes: an array of channel structures in the core region; a substrate layer extending from the non-array region to the core region and being in contact with the array of channel structures; an insulating structure including a first portion extending along a lateral direction from the non-array region to the core region and a second portion extending along a vertical direction through the substrate layer in the non-array region, where the second portion of the insulating structure surrounds the core region; and contact structures penetrating through the second portion of the insulating structure, where the contact structures are electrically insulated from the substrate layer by the insulating structure.

Abstract: Embodiments of 3D memory devices and methods for forming the same are disclosed. In one example, a 3D memory device includes a multi-layer stacked structure, where the multi-layer stacked structure includes a plurality of alternately stacked conductive layers and dielectric layers. The 3D memory device further includes a semiconductor layer over the multi-layer stacked structure, and a plurality of channel structures penetrating into the multi-layer stacked structure and the semiconductor layer. A first end of each channel structure is located within the semiconductor layer, and the first ends of the channel structures are aligned with one another.

Abstract: Aspect of the disclosure provide a semiconductor device including a stack structure having a core region in which a plurality of channel structures are formed, and a semiconductor layer located on one side of the stack structure in a stacking direction of the stack structure, the channel structures extending to the semiconductor layer, and projections of the semiconductor layer and the channel structures in a plane parallel to the stacking direction not overlapping. The semiconductor device can further include a first insulating layer at least located on a first surface of the semiconductor layer far away from the stack structure, and a first leading-out portion penetrating through a portion of the first insulating layer corresponding to the core region in the stacking direction and being in contact with the semiconductor layer.

Abstract: A method for suppressing magnetizing inrush current of the transformer with flux linkage control includes connecting a small-capacity direct current/alternating current (DC/AC) converter with the secondary winding or auxiliary winding of transformer, detecting the primary side phase voltage before closing load, inducing the core flux linkage reference according to the relationship between the winding voltage and core flux linkage. The core flux linkage closed-loop PI control system is constructed to control the converter voltage in the synchronous coordinate, then the core flux linkage can track its reference with no static error, thus the sinusoidal flux linkage with 90-degree difference from the grid voltage can be pre-established in the core before no-load closing. By these methods, no matter when the main transformer closes, the core flux linkage is always in the steady state, and the magnetizing inrush current can be eliminated completely.

Abstract: In certain aspects, a three-dimensional (3D) memory device includes a first semiconductor structure and a second semiconductor bonded with the first semiconductor structure. The first semiconductor structure includes an array of NAND memory strings, a semiconductor layer in contact with source ends of the array of NAND memory strings, an insulating layer in contact with the semiconductor layer, and a contact structure in the insulating layer. The insulating layer electrically insulates the contact structure from the semiconductor layer. The second semiconductor structure includes a transistor.

Abstract: Aspects of the disclosure provide a semiconductor device and a method to fabricate the semiconductor device. The semiconductor device includes a first die comprising a first contact structure formed on a face side of the first die. The semiconductor device includes a first semiconductor structure and a first pad structure that are disposed on a back side of the first die. The first semiconductor structure is conductively connected with the first contact structure from the back side of the first die and the first pad structure is conductively coupled with the first semiconductor structure. An end of the first contact structure protrudes into the first semiconductor structure without connecting to the first pad structure. The first die and a second die can be bonded face-to-face.

Abstract: In certain aspects, a three-dimensional (3D) memory device includes a first semiconductor structure and a second semiconductor structure bonded with the first semiconductor structure. The first semiconductor structure includes an array of NAND memory strings, a semiconductor layer in contact with source ends of the array of NAND memory strings, a non-conductive layer aligned with the semiconductor layer, and a contact structure in the non-conductive layer. The non-conductive layer electrically insulates the contact structure from the semiconductor layer. The second semiconductor structure includes a transistor.

Abstract: A magnetic integrated hybrid distribution transformer includes a main transformer, a series isolation transformer and a converter, wherein: an iron core includes an iron beam unit, an iron yoke unit and a leakage magnetic core unit. The main transformer includes secondary windings, primary windings and control windings all of which are layer-windings and wound around main transformer iron beams. The series isolation transformer includes converter side windings and grid side windings all of which are pancake-windings and wound around isolation transformer iron beams. The converter side windings and the control windings are respectively connected with the converter by the star connection with neutral point. Leakage magnetic cores are respectively inserted between the primary windings and the control windings or between the converter side windings and the grid side windings, so as to achieve magnetic integration design of the transformer and output connection inductor of the converter.

Abstract: A method for suppressing magnetizing inrush current of the transformer with flux linkage control includes connecting a small-capacity direct current/alternating current (DC/AC) converter with the secondary winding or auxiliary winding of transformer, detecting the primary side phase voltage before closing load, inducing the core flux linkage reference according to the relationship between the winding voltage and core flux linkage. The core flux linkage closed-loop PI control system is constructed to control the converter voltage in the synchronous coordinate, then the core flux linkage can track its reference with no static error, thus the sinusoidal flux linkage with 90-degree difference from the grid voltage can be pre-established in the core before no-load closing. By these methods, no matter when the main transformer closes, the core flux linkage is always in the steady state, and the magnetizing inrush current can be eliminated completely.

Abstract: A magnetic integrated hybrid distribution transformer includes a main transformer, a series isolation transformer and a converter, wherein: an iron core includes an iron beam unit, an iron yoke unit and a leakage magnetic core unit. The main transformer includes secondary windings, primary windings and control windings all of which are layer-windings and wound around main transformer iron beams. The series isolation transformer includes converter side windings and grid side windings all of which are pancake-windings and wound around isolation transformer iron beams. The converter side windings and the control windings are respectively connected with the converter by the star connection with neutral point. Leakage magnetic cores are respectively inserted between the primary windings and the control windings or between the converter side windings and the grid side windings, so as to achieve magnetic integration design of the transformer and output connection inductor of the converter.