Patents by Inventor Mingkang Zhang

Mingkang Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240164090
    Abstract: Aspect of the disclosure provide a semiconductor device including a stack structure having a core region in which a plurality of channel structures are formed, and a semiconductor layer located on one side of the stack structure in a stacking direction of the stack structure, the channel structures extending to the semiconductor layer, and projections of the semiconductor layer and the channel structures in a plane parallel to the stacking direction not overlapping. The semiconductor device can further include a first insulating layer at least located on a first surface of the semiconductor layer far away from the stack structure, and a first leading-out portion penetrating through a portion of the first insulating layer corresponding to the core region in the stacking direction and being in contact with the semiconductor layer.
    Type: Application
    Filed: December 28, 2022
    Publication date: May 16, 2024
    Applicant: Yangtze Memory Technologies Co., Ltd.
    Inventors: Mingkang ZHANG, Liang XIAO, Huan WANG, Shu WU
  • Publication number: 20240164100
    Abstract: Embodiments of 3D memory devices and methods for forming the same are disclosed. In one example, a 3D memory device includes a multi-layer stacked structure, where the multi-layer stacked structure includes a plurality of alternately stacked conductive layers and dielectric layers. The 3D memory device further includes a semiconductor layer over the multi-layer stacked structure, and a plurality of channel structures penetrating into the multi-layer stacked structure and the semiconductor layer. A first end of each channel structure is located within the semiconductor layer, and the first ends of the channel structures are aligned with one another.
    Type: Application
    Filed: April 5, 2023
    Publication date: May 16, 2024
    Inventors: Mingkang Zhang, Liang Xiao, Yi Zhao, Shu Wu, Wenbin Zhou
  • Patent number: 11735903
    Abstract: A method for suppressing magnetizing inrush current of the transformer with flux linkage control includes connecting a small-capacity direct current/alternating current (DC/AC) converter with the secondary winding or auxiliary winding of transformer, detecting the primary side phase voltage before closing load, inducing the core flux linkage reference according to the relationship between the winding voltage and core flux linkage. The core flux linkage closed-loop PI control system is constructed to control the converter voltage in the synchronous coordinate, then the core flux linkage can track its reference with no static error, thus the sinusoidal flux linkage with 90-degree difference from the grid voltage can be pre-established in the core before no-load closing. By these methods, no matter when the main transformer closes, the core flux linkage is always in the steady state, and the magnetizing inrush current can be eliminated completely.
    Type: Grant
    Filed: June 22, 2018
    Date of Patent: August 22, 2023
    Assignee: XI'AN JIAOTONG UNIVERSITY
    Inventors: Yibin Liu, Deliang Liang, Yang Liang, Mingkang Zhang
  • Publication number: 20230065384
    Abstract: In certain aspects, a three-dimensional (3D) memory device includes a first semiconductor structure and a second semiconductor bonded with the first semiconductor structure. The first semiconductor structure includes an array of NAND memory strings, a semiconductor layer in contact with source ends of the array of NAND memory strings, an insulating layer in contact with the semiconductor layer, and a contact structure in the insulating layer. The insulating layer electrically insulates the contact structure from the semiconductor layer. The second semiconductor structure includes a transistor.
    Type: Application
    Filed: September 29, 2021
    Publication date: March 2, 2023
    Inventor: Mingkang ZHANG
  • Publication number: 20230062321
    Abstract: Aspects of the disclosure provide a semiconductor device and a method to fabricate the semiconductor device. The semiconductor device includes a first die comprising a first contact structure formed on a face side of the first die. The semiconductor device includes a first semiconductor structure and a first pad structure that are disposed on a back side of the first die. The first semiconductor structure is conductively connected with the first contact structure from the back side of the first die and the first pad structure is conductively coupled with the first semiconductor structure. An end of the first contact structure protrudes into the first semiconductor structure without connecting to the first pad structure. The first die and a second die can be bonded face-to-face.
    Type: Application
    Filed: October 15, 2021
    Publication date: March 2, 2023
    Applicant: Yangtze Memory Technologies Co., Ltd.
    Inventors: Yihuan WANG, Mingkang ZHANG
  • Publication number: 20230061992
    Abstract: In certain aspects, a three-dimensional (3D) memory device includes a first semiconductor structure and a second semiconductor structure bonded with the first semiconductor structure. The first semiconductor structure includes an array of NAND memory strings, a semiconductor layer in contact with source ends of the array of NAND memory strings, a non-conductive layer aligned with the semiconductor layer, and a contact structure in the non-conductive layer. The non-conductive layer electrically insulates the contact structure from the semiconductor layer. The second semiconductor structure includes a transistor.
    Type: Application
    Filed: September 29, 2021
    Publication date: March 2, 2023
    Inventor: Mingkang ZHANG
  • Patent number: 11587719
    Abstract: A magnetic integrated hybrid distribution transformer includes a main transformer, a series isolation transformer and a converter, wherein: an iron core includes an iron beam unit, an iron yoke unit and a leakage magnetic core unit. The main transformer includes secondary windings, primary windings and control windings all of which are layer-windings and wound around main transformer iron beams. The series isolation transformer includes converter side windings and grid side windings all of which are pancake-windings and wound around isolation transformer iron beams. The converter side windings and the control windings are respectively connected with the converter by the star connection with neutral point. Leakage magnetic cores are respectively inserted between the primary windings and the control windings or between the converter side windings and the grid side windings, so as to achieve magnetic integration design of the transformer and output connection inductor of the converter.
    Type: Grant
    Filed: December 5, 2017
    Date of Patent: February 21, 2023
    Assignee: XI'AN JIAOTONG UNIVERSITY
    Inventors: Deliang Liang, Yibin Liu, Yang Liang, Mingkang Zhang, Qixu Chen, Guanhua Sun, Peixin Jia
  • Publication number: 20220271526
    Abstract: A method for suppressing magnetizing inrush current of the transformer with flux linkage control includes connecting a small-capacity direct current/alternating current (DC/AC) converter with the secondary winding or auxiliary winding of transformer, detecting the primary side phase voltage before closing load, inducing the core flux linkage reference according to the relationship between the winding voltage and core flux linkage. The core flux linkage closed-loop PI control system is constructed to control the converter voltage in the synchronous coordinate, then the core flux linkage can track its reference with no static error, thus the sinusoidal flux linkage with 90-degree difference from the grid voltage can be pre-established in the core before no-load closing. By these methods, no matter when the main transformer closes, the core flux linkage is always in the steady state, and the magnetizing inrush current can be eliminated completely.
    Type: Application
    Filed: June 22, 2018
    Publication date: August 25, 2022
    Inventors: Yibin Liu, Deliang Liang, Yang Liang, Mingkang Zhang
  • Publication number: 20200286675
    Abstract: A magnetic integrated hybrid distribution transformer includes a main transformer, a series isolation transformer and a converter, wherein: an iron core includes an iron beam unit, an iron yoke unit and a leakage magnetic core unit. The main transformer includes secondary windings, primary windings and control windings all of which are layer-windings and wound around main transformer iron beams. The series isolation transformer includes converter side windings and grid side windings all of which are pancake-windings and wound around isolation transformer iron beams. The converter side windings and the control windings are respectively connected with the converter by the star connection with neutral point. Leakage magnetic cores are respectively inserted between the primary windings and the control windings or between the converter side windings and the grid side windings, so as to achieve magnetic integration design of the transformer and output connection inductor of the converter.
    Type: Application
    Filed: December 5, 2017
    Publication date: September 10, 2020
    Inventors: Deliang Liang, Yibin Liu, Yang Liang, Mingkang Zhang, Qixu Chen, Guanhua Sun, Peixin Jia