Abstract: A chip-to-chip signal transmission system is provided, which includes a first chip, a second chip, and a dielectric layer. A signal transmission is performed between a transmitter of the first chip and a receiver of the second chip through a transmission-metal-pad unit and a receiving-metal-pad unit. The transmitter transmits a transmission-testing-coupling signal through the transmission-metal-pad unit according to a driving-testing signal when the transmitter receives the driving-testing signal. A first testing unit receives the transmission-testing-coupling signal and outputs a transmission-testing signal according to the transmission-testing-coupling signal. A second testing unit transmits a receiving-testing-coupling signal through the receiving-metal-pad unit according to the driving-testing signal when the second testing unit receives the driving-testing signal.

Abstract: A signal transmission system and a signal transmission circuit are provided. The system includes a first chip and a second chip. A rising pulse signal (RPS) and a falling pulse signal (FPS) are generated by a transmission module on the first chip in response to a waveform of an input signal.

Abstract: A signal transmission system and a signal transmission circuit are provided. The system includes a first chip and a second chip. A rising pulse signal (RPS) and a falling pulse signal (FPS) are generated by a transmission module on the first chip in response to a waveform of an input signal. The RPS corresponds to rising edges of the input signal, the FPS corresponds to falling edges of the input signal, and the RPS and the FPS are transmitted by a first transmission unit and a second transmission unit both located on a surface of the first chip.

Abstract: A chip-to-chip signal transmission system is provided, which includes a first chip, a second chip, and a dielectric layer. A signal transmission is performed between a transmitter of the first chip and a receiver of the second chip through a transmission-metal-pad unit and a receiving-metal-pad unit. The transmitter transmits a transmission-testing-coupling signal through the transmission-metal-pad unit according to a driving-testing signal when the transmitter receives the driving-testing signal. A first testing unit receives the transmission-testing-coupling signal and outputs a transmission-testing signal according to the transmission-testing-coupling signal. A second testing unit transmits a receiving-testing-coupling signal through the receiving-metal-pad unit according to the driving-testing signal when the second testing unit receives the driving-testing signal.

Abstract: A semiconductor package includes a semiconductor structure. The semiconductor structure includes a plurality of dielectric layers and a plurality of conductive interconnects embedded in the semiconductor structure. The semiconductor structure also includes a plurality of proximity communication signal input terminals. At least one of the plurality of proximity communication signal input terminals includes a first electrode and a second electrode. The first electrode and the second electrode are spaced apart so as to be configured to provide proximity communication through capacitive coupling. The first electrode is exposed proximate to a surface of the semiconductor structure.

Abstract: Provided is an active non-contact probe card including a carrier, a support base, a piezoelectric material layer, an active sensor array chip and a control circuit. The support base is disposed on the carrier. The piezoelectric material layer is connected with the support base. The position of the active sensor array chip with respect to the carrier is determined according to the thicknesses of the support base and the thicknesses of the piezoelectric material layer. A control circuit provides a control voltage to the piezoelectric material layer to control the thickness of the piezoelectric material layer, so as to adjust the position of the active sensor array chip with respect to the carrier.

Abstract: The present invention relates to a semiconductor package having at least one first layer chip, a plurality of first metal bumps, at least one second layer chip and a package body. The first layer chip includes a first active surface upon which the first metal bumps are disposed and a plurality of first signal coupling pads disposed adjacent to the first active surface. The second layer chip is electrically connected to the first layer chip, and includes a second active surface that faces the first active surface and a plurality of second signal coupling pads. The second signal coupling pads are capacitively coupled to the first signal coupling pads so as to provide proximity communication between the first layer chip and the second layer chip. The package body encapsulates the first layer chip, the first metal bumps, and the second layer chip, and the first metal bumps are partially exposed.

Abstract: The present invention relates to an apparatus and a method for testing non-contact pads of a semiconductor device to be tested. The apparatus includes an insulating body, at least one testing module and a plurality of probes. The insulating body includes an accommodating cavity, a lower opening and at least one side opening. The side opening communicates with the accommodating cavity and the lower opening. The testing module is disposed in the side opening, and each testing module includes a circuit board and an active chip. The active chip is disposed on and electrically connected to the circuit board. The active chip has a plurality of testing pads exposed to the accommodating cavity. The probes are disposed in the lower opening.

Abstract: A semiconductor package includes a semiconductor structure. The semiconductor structure includes a plurality of dielectric layers and a plurality of conductive interconnects embedded in the semiconductor structure. The semiconductor structure also includes a plurality of proximity communication signal input terminals. At least one of the plurality of proximity communication signal input terminals includes a first electrode and a second electrode. The first electrode and the second electrode are spaced apart so as to be configured to provide proximity communication through capacitive coupling. The first electrode is exposed proximate to a surface of the semiconductor structure.

Abstract: The present invention relates to a semiconductor package and a method for making the same. The semiconductor package includes a substrate, at least one first chip, a dielectric layer and at least one second chip. The first chip is attached and electrically connected to the substrate. The first chip includes a first active surface and a plurality of first signal coupling pads. The first signal coupling pads are disposed adjacent to the first active surface. The dielectric layer is disposed on the first active surface. The second chip is attached and electrically connected to the substrate by metal bumps. The second chip includes a second active surface and a plurality of second signal coupling pads. The second active surface contacts the dielectric layer. The second signal coupling pads are disposed adjacent to the second active surface, and capacitively coupled to the first signal coupling pads of the first chip, so as to provide proximity communication between the first chip and the second chip.

Abstract: The present invention relates to a semiconductor package and a method for making the same. The semiconductor package includes at least one first layer chip, a plurality of first metal bumps, at least one second layer chip and a package body. The first layer chip includes a first active surface and a plurality of first signal coupling pads. The first signal coupling pads are disposed adjacent to the first active surface. The first metal bumps are disposed on the first active surface of the first layer chip. The second layer chip is electrically connected to the first layer chip, and includes a second active surface and a plurality of second signal coupling pads. The second active surface faces the first active surface of the first layer chip. The second signal coupling pads are disposed adjacent to the second active surface, and capacitively coupled to the first signal coupling pads of the first layer chip, so as to provide proximity communication between the first layer chip and the second layer chip.

Abstract: The present invention relates to a semiconductor package and a method for making the same. The semiconductor package includes a first chip and a second chip. The first chip comprises a first active surface, at least one first non-top metal layer and a plurality of first signal coupling pads. The first non-top metal layer is disposed adjacent to and spaced apart from the first active surface by a second distance. The first signal coupling pads are disposed on the first non-top metal layer. The second chip is electrically connected to the first chip. The second chip comprises a second active surface, at least one second non-top metal layer and a plurality of third signal coupling pads. The second active surface faces the first active surface of the first chip. The second non-top metal layer is disposed adjacent to and spaced apart from the second active surface by a fourth distance.

Abstract: The present invention relates to a semiconductor package. The semiconductor package includes a substrate, a first chip and a second chip. The substrate has a first surface, a second surface and at least one through hole. The first chip is disposed adjacent to the first surface of the substrate. The first chip includes a first active surface and a plurality of first signal pads. Part of the first active surface is exposed to the through hole. The position of the first signal pads corresponds to the through hole. The second chip is disposed adjacent to the second surface. The second chip includes a second active surface and a plurality of second signal pads. Part of the second active surface is exposed to the through hole. The position of the second signal pads corresponds to the through hole, and the second signal pads are capacitively coupled to the first signal pads of the first chip, so as to provide proximity communication between the first chip and the second chip.

Abstract: The present invention relates to a semiconductor package and a method for making the same. The semiconductor package includes a first chip and a second chip. The first chip comprises a first active surface, at least one first non-top metal layer and a plurality of first signal coupling pads. The first non-top metal layer is disposed adjacent to and spaced apart from the first active surface by a second distance. The first signal coupling pads are disposed on the first non-top metal layer. The second chip is electrically connected to the first chip. The second chip comprises a second active surface, at least one second non-top metal layer and a plurality of third signal coupling pads. The second active surface faces the first active surface of the first chip. The second non-top metal layer is disposed adjacent to and spaced apart from the second active surface by a fourth distance.

Abstract: The present invention relates to an apparatus and a method for testing non-contact pads of a semiconductor device to be tested. The apparatus includes an insulating body, at least one testing module and a plurality of probes. The insulating body includes an accommodating cavity, a lower opening and at least one side opening. The side opening communicates with the accommodating cavity and the lower opening. The testing module is disposed in the side opening, and each testing module includes a circuit board and an active chip. The active chip is disposed on to and electrically connected to the circuit board. The active chip has a plurality of testing pads exposed to the accommodating cavity. The probes are disposed in the lower opening.

Abstract: The present invention relates to a semiconductor package. The semiconductor package includes a substrate, a first chip and an interposer. The first chip is mechanically and electrically connected to the substrate. Some signal pads of the interposer are capacitively coupled to some signal pads of the first chip, so as to provide proximity communication between the first chip and the interposer. Whereby, the capacitively coupled signal pads can be made in fine pitch, and therefore the size of the semiconductor package is reduced and the density of the signal pads is increased.

Abstract: A test kit for testing a chip subassembly and a testing method by using the same is provided. The chip subassembly includes at least two stacked chips each having a number of electric contacts is provided. The test kit includes a test socket and a test plate. The test socket is configured to electrically engage the electric contacts on a first side of the chip subassembly. The test plate has at least a number of first probes configured for electrically engaging the electric contacts on a second side of the chip subassembly. At least one of the test socket and the test plate has a number of second probes for electrically connecting the test socket and the test plate.

Abstract: An exemplary method for capturing a still image includes: measuring a theoretic exposure time that is suitable for current ambient light conditions; controlling a charge coupled device image sensor to expose itself for a real exposure time according to the determined theoretic exposure time to capture an image signal; and adjusting the captured image signal according to a ratio of the theoretic exposure time to the real exposure time.