Patents by Inventor Mingli DU

Mingli DU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Word-line-pickup structure and method for forming the same
    Patent number: 12757388
    Abstract: A memory device, having a plurality of first-word-lines, each first-word-line having a first portion, a second portion, and a third portion; a plurality of second-word-lines, each second-word-line having a first portion, a second portion, and a third portion; and a memory array having a first side, a second side laterally opposite the first side, and a third side. The first portions of each first-word-line and each second-word-line are spaced apart from their respective third portions. The second portion of each first-word-line and the second portion of each second-word-line are non-parallel and non-co-linear with their respective first portions and third portions. Each first-word-line is disposed such that its second portion is adjacent to the first side, and each second-word-line is disposed such that its second portion is adjacent to the second side. The memory device further has a plurality of first-side-word-line-pickup-structures, and a plurality of second-side-word-line-pickup-structures.
    Type: Grant
    Filed: August 3, 2023
    Date of Patent: October 6, 2026
    Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
    Inventors: Dongmen Song, Fandong Liu, Wenxiang Xu, Mingli Du
  • WORD-LINE-PICKUP STRUCTURE AND METHOD FOR FORMING THE SAME
    Publication number: 20240032285
    Abstract: A memory device, having a plurality of first-word-lines, each first-word-line having a first portion, a second portion, and a third portion; a plurality of second-word-lines, each second-word-line having a first portion, a second portion, and a third portion; and a memory array having a first side, a second side laterally opposite the first side, and a third side. The first portions of each first-word-line and each second-word-line are spaced apart from their respective third portions. The second portion of each first-word-line and the second portion of each second-word-line are non-parallel and non-co-linear with their respective first portions and third portions. Each first-word-line is disposed such that its second portion is adjacent to the first side, and each second-word-line is disposed such that its second portion is adjacent to the second side. The memory device further has a plurality of first-side-word-line-pickup-structures, and a plurality of second-side-word-line-pickup-structures.
    Type: Application
    Filed: August 3, 2023
    Publication date: January 25, 2024
    Inventors: Dongmen SONG, Fandong LIU, Wenxiang XU, Mingli DU